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Resistive switching
24
"Adaptive threshold in TiO 2 -based synapses" (2019) Ghenzi, N.; Barella, M.; Rubi, D.; Acha, C. Journal of Physics D: Applied Physics. 52(12)
"Adaptive threshold in TiO 2 -based synapses" (2019) Ghenzi, N.; Barella, M.; Rubi, D.; Acha, C. Journal of Physics D: Applied Physics. 52(12)
"Concurrent ionic migration and electronic effects at the memristive TiOx/La1/3Ca2/3MnO3-x interface" (2018) Acevedo, W.R.;Ferreyra, C.;Sánchez, M.J. (...)Rubi, D. Journal of Physics D: Applied Physics. 51(12)
"Concurrent ionic migration and electronic effects at the memristive TiOx/La1/3Ca2/3MnO3-x interface" (2018) Acevedo, W.R.;Ferreyra, C.;Sánchez, M.J. (...)Rubi, D. Journal of Physics D: Applied Physics. 51(12)
"BaTiO3 thin films on platinized silicon: Growth, characterization and resistive memory behavior" (2017) Román, A.;Rengifo, M.;Saleh Medina, L.M. (...)Rubi, D. Thin Solid Films. 628:208-213
"Origin of multistate resistive switching in Ti/manganite/SiOx/Si heterostructures" (2017) Román Acevedo, W.;Acha, C.;Sánchez, M.J. (...)Rubi, D. Applied Physics Letters. 110(5)
"Shock waves in binary oxides memristors" (2017) Tesler, F.;Tang, S.;Dobrosavljević, V. (...)The Society of Photo-Optical Instrumentation Engineers (SPIE) Spintronics X Symposium. 10357
"Shock waves in binary oxides memristors" (2017) Tesler, F.;Tang, S.;Dobrosavljević, V. (...)The Society of Photo-Optical Instrumentation Engineers (SPIE) Spintronics X Symposium. 10357
"Transport mechanism through metal-cobaltite interfaces" (2016) Acha, C.;Schulman, A.;Boudard, M. (...)Tsuchiya, T. Applied Physics Letters. 109(1)
"Shock waves and commutation speed of memristors" (2016) Tang, S.;Tesler, F.;Marlasca, F.G. (...)Rozenberg, M. Physical Review X. 6(1)
"Manganite-based memristive heterojunction with tunable non-linear I-V characteristics" (2015) Lee, H.-S.; Park, H.-H.; Rozenberg, M.J. Nanoscale. 7(15):6444-6450
"Resistive switching phenomena in TiOx nanoparticle layers for memory applications" (2014) Goren, E.;Ungureanu, M.;Zazpe, R. (...)Casanova, F. Applied Physics Letters. 105(14)
"Nonvolatile multilevel resistive switching memory cell: A transition metal oxide-based circuit" (2014) Stoliar, P.;Levy, P.;Sanchez, M.J. (...)Rozenberg, M.J. IEEE Transactions on Circuits and Systems II: Express Briefs. 61(1):21-25
"Two resistive switching regimes in thin film manganite memory devices on silicon" (2013) Rubi, D.;Tesler, F.;Alposta, I. (...)Levy, P. Applied Physics Letters. 103(16)
"Cyclic electric field stress on bipolar resistive switching devices" (2013) Schulman, A.; Acha, C. Journal of Applied Physics. 114(24)
"Numerical and experimental study of stochastic resistive switching" (2013) Patterson, G.A.; Fierens, P.I.; García, A.A.; Grosz, D.F. Physical Review E - Statistical, Nonlinear, and Soft Matter Physics. 87(1)
"Optimization of resistive switching performance of metal-manganite oxide interfaces by a multipulse protocol" (2012) Ghenzi, N.;Snchez, M.J.;Rozenberg, M.J. (...)Levy, P. Journal of Applied Physics. 111(8)
"Resistive switching effects on the spatial distribution of phases in metal-complex oxide interfaces" (2012) Schulman, A.; Acha, C. Physica B: Condensed Matter. 407(16):3147-3149
"Dynamical behaviour of the resistive switching in ceramic YBCO/metal interfaces" (2011) Acha, C. Journal of Physics D: Applied Physics. 44(34)
"Understanding electroforming in bipolar resistive switching oxides" (2011) Gomez-Marlasca, F.; Ghenzi, N.; Rozenberg, M.J.; Levy, P. Applied Physics Letters. 98(4)
"Retentivity of RRAM devices based on metal/YBCO interfaces" (2011) Schulman, A.; Acha, C. 2011 MRS Spring Meeting. 1337:103-107
"Hysteresis switching loops in Ag-manganite memristive interfaces" (2010) Ghenzi, N.;Sánchez, M.J.;Gomez-Marlasca, F. (...)Rozenberg, M.J. Journal of Applied Physics. 107(9)
"Electric pulse-induced resistive switching in ceramic YBa2 Cu3 O7 - δ / Au interfaces" (2009) Acha, C. Physica B: Condensed Matter. 404(18):2746-2748
"Non-volatile resistive switching in the dielectric superconductor YBa 2Cu3O7-δ" (2009) Acha, C.; Rozenberg, M.J. Journal of Physics Condensed Matter. 21(4)