Artículo
Abstract:
The development of reliable redox-based resistive random-access memory devices requires understanding and disentangling concurrent effects present at memristive interfaces. We report on the fabrication and electrical characterization of TiOx/La1/3Ca2/3MnO3-x microstructured interfaces and on the modeling of their memristive behavior. We show that a careful tuning of the applied external electrical stimuli allows controlling the redox process between both layers, obtaining multilevel non-volatile resistance states. We simulate the oxygen vacancies dynamics at the interface between both oxides, and successfully reproduce the experimental electrical behavior after the inclusion of an electronic effect, related to the presence of an n-p diode at the interface. The formation of the diode is due to the n- and p-character of TiOx and La1/3Ca2/3MnO3-x, respectively. Our analysis indicates that oxygen vacancies migration between both layers is triggered after the diode is polarized either in forward mode or in reverse mode above breakdown. Electrical measurements at different temperatures suggest that the diode can be characterized as Zener-type. The advantages of our junctions for their implementation in RRAM devices are finally discussed. © 2018 IOP Publishing Ltd.
Registro:
| Documento: | Artículo |
| Título: | Concurrent ionic migration and electronic effects at the memristive TiOx/La1/3Ca2/3MnO3-x interface |
| Autor: | Acevedo, W.R.; Ferreyra, C.; Sánchez, M.J.; Acha, C.; Gay, R.; Rubi, D. |
| Filiación: | GIyA e INN, CNEA, Av. Gral Paz 1499 (1650), San-Martin-Buenos-Aires, Argentina Centro Atómico Bariloche, Instituto Balseiro, Rio Negro, San Carlos de Bariloche8400, Argentina Consejo Nacional de Investigaciones Cientificas y Técnicas (CONICET), Godoy Cruz 2290 (1425), Buenos Aires, Argentina Departamento de Fisica, FCEyN, Universidad de Buenos Aires, IFIBA-CONICET, Pab. I, Ciudad Universitaria, Buenos Aires (1428), Argentina CIC NanoGUNE, Tolosa Hiribidea 76, Donostia-San-Sebastián, 20018, Spain Escuela de Ciencia y Tecnologia, UNSAM, Campus Miguelete (1650), San-Martin-Buenos-Aires, Argentina |
| Palabras clave: | n-p junctions; oxide interfaces; resistive switching; Calcium compounds; Diodes; Lanthanum compounds; Manganese compounds; Oxygen vacancies; Titanium compounds; Electrical behaviors; Electrical characterization; Electrical measurement; Memristive behavior; N - p junctions; Oxide interfaces; Resistive random access memory; Resistive switching; Random access storage |
| Año: | 2018 |
| Volumen: | 51 |
| Número: | 12 |
| DOI: | http://dx.doi.org/10.1088/1361-6463/aaaed6 |
| Título revista: | Journal of Physics D: Applied Physics |
| Título revista abreviado: | J Phys D |
| ISSN: | 00223727 |
| CODEN: | JPAPB |
| Registro: | https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00223727_v51_n12_p_Acevedo |
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Citas:
---------- APA ----------
Acevedo, W.R., Ferreyra, C., Sánchez, M.J., Acha, C., Gay, R. & Rubi, D. (2018) . Concurrent ionic migration and electronic effects at the memristive TiOx/La1/3Ca2/3MnO3-x interface. Journal of Physics D: Applied Physics, 51(12).http://dx.doi.org/10.1088/1361-6463/aaaed6
---------- CHICAGO ----------
Acevedo, W.R., Ferreyra, C., Sánchez, M.J., Acha, C., Gay, R., Rubi, D. "Concurrent ionic migration and electronic effects at the memristive TiOx/La1/3Ca2/3MnO3-x interface" . Journal of Physics D: Applied Physics 51, no. 12 (2018).http://dx.doi.org/10.1088/1361-6463/aaaed6
---------- MLA ----------
Acevedo, W.R., Ferreyra, C., Sánchez, M.J., Acha, C., Gay, R., Rubi, D. "Concurrent ionic migration and electronic effects at the memristive TiOx/La1/3Ca2/3MnO3-x interface" . Journal of Physics D: Applied Physics, vol. 51, no. 12, 2018.http://dx.doi.org/10.1088/1361-6463/aaaed6
---------- VANCOUVER ----------
Acevedo, W.R., Ferreyra, C., Sánchez, M.J., Acha, C., Gay, R., Rubi, D. Concurrent ionic migration and electronic effects at the memristive TiOx/La1/3Ca2/3MnO3-x interface. J Phys D. 2018;51(12).http://dx.doi.org/10.1088/1361-6463/aaaed6
