Artículo

Ghenzi, N.; Snchez, M.J.; Rozenberg, M.J.; Stoliar, P.; Marlasca, F.G.; Rubi, D.; Levy, P. "Optimization of resistive switching performance of metal-manganite oxide interfaces by a multipulse protocol" (2012) Journal of Applied Physics. 111(8)
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Abstract:

We explore different resistance states of La 0.325Pr 0.300 Ca 0.375 MnO 3- Ti interfaces as prototypes of non-volatile memory devices at room temperature. In addition to high and low resistance states accessible through bipolar pulsing with one pulse, higher resistance states can be obtained by repeatedly pulsing with a single polarity. The accumulative action of successive pulsing drives the resistance towards saturation, the time constant being a strong function of the pulsing amplitude. The experiments reveal that the pulsing amplitude and the number of applied pulses necessary to reach a target high resistance value appear to be in an exponential relationship, with a rate that results independent of the resistance value. Model simulations confirm these results and provide the oxygen vacancy profiles associated to the high resistance states obtained in the experiments. © 2012 American Institute of Physics.

Registro:

Documento: Artículo
Título:Optimization of resistive switching performance of metal-manganite oxide interfaces by a multipulse protocol
Autor:Ghenzi, N.; Snchez, M.J.; Rozenberg, M.J.; Stoliar, P.; Marlasca, F.G.; Rubi, D.; Levy, P.
Filiación:GIA, GAIANN-CAC-CNEA, Av. Gral Paz 1499, (1650) San Martn, Argentina
Centro Atmico Bariloche and Instituto Balseiro, CNEA, (8400) San Carlos de Bariloche, Argentina
Laboratoire de Physique des Solides, UMR8502 Université Paris-Sud, Orsay 91405, France
Departamento de Física Juan Jos Giambiagi, FCEN, Ciudad Universitaria Pabelln i, (1428) Buenos Aires, Argentina
ECyT, Universidad Nacional de San Martn, Campus Miguelete, Martn de Irigoyen 3100, (1650) San Martn, Argentina
Palabras clave:High resistance; High-resistance state; Low-resistance state; Model simulation; Multipulses; Nonvolatile memory devices; Oxide interfaces; Resistance state; Resistance values; Resistive switching; Room temperature; Time constants; Computer simulation; Interface states; Manganese oxide; Experiments
Año:2012
Volumen:111
Número:8
DOI: http://dx.doi.org/10.1063/1.4705283
Handle:http://hdl.handle.net/20.500.12110/paper_00218979_v111_n8_p_Ghenzi
Título revista:Journal of Applied Physics
Título revista abreviado:J Appl Phys
ISSN:00218979
CODEN:JAPIA
PDF:https://bibliotecadigital.exactas.uba.ar/download/paper/paper_00218979_v111_n8_p_Ghenzi.pdf
Registro:https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00218979_v111_n8_p_Ghenzi

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Citas:

---------- APA ----------
Ghenzi, N., Snchez, M.J., Rozenberg, M.J., Stoliar, P., Marlasca, F.G., Rubi, D. & Levy, P. (2012) . Optimization of resistive switching performance of metal-manganite oxide interfaces by a multipulse protocol. Journal of Applied Physics, 111(8).
http://dx.doi.org/10.1063/1.4705283
---------- CHICAGO ----------
Ghenzi, N., Snchez, M.J., Rozenberg, M.J., Stoliar, P., Marlasca, F.G., Rubi, D., et al. "Optimization of resistive switching performance of metal-manganite oxide interfaces by a multipulse protocol" . Journal of Applied Physics 111, no. 8 (2012).
http://dx.doi.org/10.1063/1.4705283
---------- MLA ----------
Ghenzi, N., Snchez, M.J., Rozenberg, M.J., Stoliar, P., Marlasca, F.G., Rubi, D., et al. "Optimization of resistive switching performance of metal-manganite oxide interfaces by a multipulse protocol" . Journal of Applied Physics, vol. 111, no. 8, 2012.
http://dx.doi.org/10.1063/1.4705283
---------- VANCOUVER ----------
Ghenzi, N., Snchez, M.J., Rozenberg, M.J., Stoliar, P., Marlasca, F.G., Rubi, D., et al. Optimization of resistive switching performance of metal-manganite oxide interfaces by a multipulse protocol. J Appl Phys. 2012;111(8).
http://dx.doi.org/10.1063/1.4705283