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Rubi, D.; Tesler, F.; Alposta, I.; Kalstein, A.; Ghenzi, N.; Gomez-Marlasca, F.; Rozenberg, M.; Levy, P. "Two resistive switching regimes in thin film manganite memory devices on silicon" (2013) Applied Physics Letters. 103(16)
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Abstract:

Bipolar resistive switching in low cost n-Si/La2/3Ca 1/3MnO3/M (M = Ti + Cu) devices was investigated. For low SET compliance currents (CC), an interfacial-related resistive switching mechanism, associated to the migration of oxygen vacancies close to the manganite/metal interface, is operative. Simulations using the voltage enhanced oxygen vacancies drift model validate our experimental results. When further increasing the CC, we have observed the onset of a second, filamentary, resistive switching regime with a concomitant collapse of the ON/OFF ratio. We finally demonstrate that it is possible to delay the onset of the filamentary regime by controlling the film thickness. © 2013 AIP Publishing LLC.

Registro:

Documento: Artículo
Título:Two resistive switching regimes in thin film manganite memory devices on silicon
Autor:Rubi, D.; Tesler, F.; Alposta, I.; Kalstein, A.; Ghenzi, N.; Gomez-Marlasca, F.; Rozenberg, M.; Levy, P.
Filiación:Centro Atómico Constituyentes (CNEA), San Martín, Buenos Aires, Argentina
Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET), Buenos Aires, Argentina
Escuela de Ciencia y Tecnología, UNSAM, San Martín , Buenos Aires, Argentina
Laboratoire de Physique des Solides, UMR 8502, Université Paris-Sud XI, Orsay 91405, France
Departamento de Física J. J. Giambiagi, FCEN, Universidad de Buenos Aires, 1428 Buenos Aires, Argentina
Palabras clave:Compliance current; Drift model; Low costs; On/off ratio; Resistive switching; Resistive switching mechanisms; Compliant mechanisms; Manganese oxide; Oxygen vacancies; Switching systems
Año:2013
Volumen:103
Número:16
DOI: http://dx.doi.org/10.1063/1.4826484
Título revista:Applied Physics Letters
Título revista abreviado:Appl Phys Lett
ISSN:00036951
CODEN:APPLA
Registro:https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00036951_v103_n16_p_Rubi

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Citas:

---------- APA ----------
Rubi, D., Tesler, F., Alposta, I., Kalstein, A., Ghenzi, N., Gomez-Marlasca, F., Rozenberg, M.,..., Levy, P. (2013) . Two resistive switching regimes in thin film manganite memory devices on silicon. Applied Physics Letters, 103(16).
http://dx.doi.org/10.1063/1.4826484
---------- CHICAGO ----------
Rubi, D., Tesler, F., Alposta, I., Kalstein, A., Ghenzi, N., Gomez-Marlasca, F., et al. "Two resistive switching regimes in thin film manganite memory devices on silicon" . Applied Physics Letters 103, no. 16 (2013).
http://dx.doi.org/10.1063/1.4826484
---------- MLA ----------
Rubi, D., Tesler, F., Alposta, I., Kalstein, A., Ghenzi, N., Gomez-Marlasca, F., et al. "Two resistive switching regimes in thin film manganite memory devices on silicon" . Applied Physics Letters, vol. 103, no. 16, 2013.
http://dx.doi.org/10.1063/1.4826484
---------- VANCOUVER ----------
Rubi, D., Tesler, F., Alposta, I., Kalstein, A., Ghenzi, N., Gomez-Marlasca, F., et al. Two resistive switching regimes in thin film manganite memory devices on silicon. Appl Phys Lett. 2013;103(16).
http://dx.doi.org/10.1063/1.4826484