Abstract:
We report on the growth and characterization of Ti/La1/3Ca3/2MnO3/SiO2/n-Si memristive devices. We demonstrate that using current as electrical stimulus unveils an intermediate resistance state, in addition to the usual high and low resistance states that are observed in the standard voltage controlled experiments. Based on thorough electrical characterization (impedance spectroscopy, current-voltage curves analysis), we disclose the contribution of three different microscopic regions of the device to the transport properties: an ohmic incomplete metallic filament, a thin manganite layer below the filament tip exhibiting Poole-Frenkel like conduction, and the SiOx layer with an electrical response well characterized by a Child-Langmuir law. Our results suggest that the existence of the SiOx layer plays a key role in the stabilization of the intermediate resistance level, indicating that the combination of two or more active resistive switching oxides adds functionalities in relation to the single-oxide devices. We understand that these multilevel devices are interesting and promising, as their fabrication procedure is rather simple and they are fully compatible with the standard Si-based electronics. © 2017 Author(s).
Registro:
Documento: |
Artículo
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Título: | Origin of multistate resistive switching in Ti/manganite/SiOx/Si heterostructures |
Autor: | Román Acevedo, W.; Acha, C.; Sánchez, M.J.; Levy, P.; Rubi, D. |
Filiación: | Gerencia de Investigación y Aplicaciones, CNEA, Av. Gral Paz 1499, San Martín, Buenos Aires, 1650, Argentina Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET), Godoy Cruz 2290, Buenos Aires, 1425, Argentina Depto. de Física, FCEyN, Universidad de Buenos Aires, IFIBA-CONICET, Pab I, Ciudad Universitaria, Buenos Aires, 1428, Argentina Centro Atómico Bariloche and Instituto Balseiro, 8400 San Carlos de Bariloche, Río Negro, Argentina Escuela de Ciencia y Tecnología, UNSAM, Campus Miguelete, San Martín, Buenos Aires, 1650, Argentina
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Palabras clave: | Heterojunctions; Manganese oxide; Switching systems; Current voltage curve; Electrical characterization; Electrical response; Fabrication procedure; Impedance spectroscopy; Intermediate resistance; Low-resistance state; Resistive switching; Memristors |
Año: | 2017
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Volumen: | 110
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Número: | 5
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DOI: |
http://dx.doi.org/10.1063/1.4975157 |
Título revista: | Applied Physics Letters
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Título revista abreviado: | Appl Phys Lett
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ISSN: | 00036951
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CODEN: | APPLA
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Registro: | https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00036951_v110_n5_p_RomanAcevedo |
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Citas:
---------- APA ----------
Román Acevedo, W., Acha, C., Sánchez, M.J., Levy, P. & Rubi, D.
(2017)
. Origin of multistate resistive switching in Ti/manganite/SiOx/Si heterostructures. Applied Physics Letters, 110(5).
http://dx.doi.org/10.1063/1.4975157---------- CHICAGO ----------
Román Acevedo, W., Acha, C., Sánchez, M.J., Levy, P., Rubi, D.
"Origin of multistate resistive switching in Ti/manganite/SiOx/Si heterostructures"
. Applied Physics Letters 110, no. 5
(2017).
http://dx.doi.org/10.1063/1.4975157---------- MLA ----------
Román Acevedo, W., Acha, C., Sánchez, M.J., Levy, P., Rubi, D.
"Origin of multistate resistive switching in Ti/manganite/SiOx/Si heterostructures"
. Applied Physics Letters, vol. 110, no. 5, 2017.
http://dx.doi.org/10.1063/1.4975157---------- VANCOUVER ----------
Román Acevedo, W., Acha, C., Sánchez, M.J., Levy, P., Rubi, D. Origin of multistate resistive switching in Ti/manganite/SiOx/Si heterostructures. Appl Phys Lett. 2017;110(5).
http://dx.doi.org/10.1063/1.4975157