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Abstract:

We report on the growth and characterization of Ti/La1/3Ca3/2MnO3/SiO2/n-Si memristive devices. We demonstrate that using current as electrical stimulus unveils an intermediate resistance state, in addition to the usual high and low resistance states that are observed in the standard voltage controlled experiments. Based on thorough electrical characterization (impedance spectroscopy, current-voltage curves analysis), we disclose the contribution of three different microscopic regions of the device to the transport properties: an ohmic incomplete metallic filament, a thin manganite layer below the filament tip exhibiting Poole-Frenkel like conduction, and the SiOx layer with an electrical response well characterized by a Child-Langmuir law. Our results suggest that the existence of the SiOx layer plays a key role in the stabilization of the intermediate resistance level, indicating that the combination of two or more active resistive switching oxides adds functionalities in relation to the single-oxide devices. We understand that these multilevel devices are interesting and promising, as their fabrication procedure is rather simple and they are fully compatible with the standard Si-based electronics. © 2017 Author(s).

Registro:

Documento: Artículo
Título:Origin of multistate resistive switching in Ti/manganite/SiOx/Si heterostructures
Autor:Román Acevedo, W.; Acha, C.; Sánchez, M.J.; Levy, P.; Rubi, D.
Filiación:Gerencia de Investigación y Aplicaciones, CNEA, Av. Gral Paz 1499, San Martín, Buenos Aires, 1650, Argentina
Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET), Godoy Cruz 2290, Buenos Aires, 1425, Argentina
Depto. de Física, FCEyN, Universidad de Buenos Aires, IFIBA-CONICET, Pab I, Ciudad Universitaria, Buenos Aires, 1428, Argentina
Centro Atómico Bariloche and Instituto Balseiro, 8400 San Carlos de Bariloche, Río Negro, Argentina
Escuela de Ciencia y Tecnología, UNSAM, Campus Miguelete, San Martín, Buenos Aires, 1650, Argentina
Palabras clave:Heterojunctions; Manganese oxide; Switching systems; Current voltage curve; Electrical characterization; Electrical response; Fabrication procedure; Impedance spectroscopy; Intermediate resistance; Low-resistance state; Resistive switching; Memristors
Año:2017
Volumen:110
Número:5
DOI: http://dx.doi.org/10.1063/1.4975157
Título revista:Applied Physics Letters
Título revista abreviado:Appl Phys Lett
ISSN:00036951
CODEN:APPLA
Registro:https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00036951_v110_n5_p_RomanAcevedo

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Citas:

---------- APA ----------
Román Acevedo, W., Acha, C., Sánchez, M.J., Levy, P. & Rubi, D. (2017) . Origin of multistate resistive switching in Ti/manganite/SiOx/Si heterostructures. Applied Physics Letters, 110(5).
http://dx.doi.org/10.1063/1.4975157
---------- CHICAGO ----------
Román Acevedo, W., Acha, C., Sánchez, M.J., Levy, P., Rubi, D. "Origin of multistate resistive switching in Ti/manganite/SiOx/Si heterostructures" . Applied Physics Letters 110, no. 5 (2017).
http://dx.doi.org/10.1063/1.4975157
---------- MLA ----------
Román Acevedo, W., Acha, C., Sánchez, M.J., Levy, P., Rubi, D. "Origin of multistate resistive switching in Ti/manganite/SiOx/Si heterostructures" . Applied Physics Letters, vol. 110, no. 5, 2017.
http://dx.doi.org/10.1063/1.4975157
---------- VANCOUVER ----------
Román Acevedo, W., Acha, C., Sánchez, M.J., Levy, P., Rubi, D. Origin of multistate resistive switching in Ti/manganite/SiOx/Si heterostructures. Appl Phys Lett. 2017;110(5).
http://dx.doi.org/10.1063/1.4975157