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Goren, E.; Ungureanu, M.; Zazpe, R.; Rozenberg, M.; Hueso, L.E.; Stoliar, P.; Tsur, Y.; Casanova, F. "Resistive switching phenomena in TiOx nanoparticle layers for memory applications" (2014) Applied Physics Letters. 105(14)
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Abstract:

Electrical characteristics of a Co/ TiOx/Co resistive memory device, fabricated by two different methods, are reported. In addition to crystalline TiO2 layers fabricated via conventional atomic layer deposition (ALD), an alternative method has been examined, where TiOx nanoparticle layers were fabricated via sol-gel. The different devices have shown different hysteresis loops with a unique crossing point for the sol-gel devices. A simple qualitative model is introduced to describe the different current-voltage behaviours by suggesting only one active metal-oxide interface for the ALD devices and two active metal-oxide interfaces for the sol-gel devices. Furthermore, we show that the resistive switching behaviour could be easily tuned by proper interface engineering and that despite having a similar active material, different fabrication methods can lead to dissimilar resistive switching properties. © 2014 AIP Publishing LLC.

Registro:

Documento: Artículo
Título:Resistive switching phenomena in TiOx nanoparticle layers for memory applications
Autor:Goren, E.; Ungureanu, M.; Zazpe, R.; Rozenberg, M.; Hueso, L.E.; Stoliar, P.; Tsur, Y.; Casanova, F.
Filiación:RBNI, Chemical Engineering Department, Technion, Haifa, 3200003, Israel
CIC NanoGUNE, Donostia-San Sebastian, Basque Country, 20018, Spain
Laboratoire de Physique des Solides, CNRS UMR 8502, Bât 510, Orsay, 91405, France
Departamento de Física and IFIBA-Conicet, FCEyN, Ciudad Universitaria, P.1, Buenos Aires, 1428, Argentina
IKERBASQUE, Basque Foundation for Science, Bilbao, Basque Country, 48011, Spain
ECyT, Universidad Nacional de San Martín, Campus Miguelete, San Martín, 1650, Argentina
Palabras clave:Memory applications; Nanoparticle layers; Resistive switching; TiO
Año:2014
Volumen:105
Número:14
DOI: http://dx.doi.org/10.1063/1.4897142
Título revista:Applied Physics Letters
Título revista abreviado:Appl Phys Lett
ISSN:00036951
CODEN:APPLA
Registro:https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00036951_v105_n14_p_Goren

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Citas:

---------- APA ----------
Goren, E., Ungureanu, M., Zazpe, R., Rozenberg, M., Hueso, L.E., Stoliar, P., Tsur, Y.,..., Casanova, F. (2014) . Resistive switching phenomena in TiOx nanoparticle layers for memory applications. Applied Physics Letters, 105(14).
http://dx.doi.org/10.1063/1.4897142
---------- CHICAGO ----------
Goren, E., Ungureanu, M., Zazpe, R., Rozenberg, M., Hueso, L.E., Stoliar, P., et al. "Resistive switching phenomena in TiOx nanoparticle layers for memory applications" . Applied Physics Letters 105, no. 14 (2014).
http://dx.doi.org/10.1063/1.4897142
---------- MLA ----------
Goren, E., Ungureanu, M., Zazpe, R., Rozenberg, M., Hueso, L.E., Stoliar, P., et al. "Resistive switching phenomena in TiOx nanoparticle layers for memory applications" . Applied Physics Letters, vol. 105, no. 14, 2014.
http://dx.doi.org/10.1063/1.4897142
---------- VANCOUVER ----------
Goren, E., Ungureanu, M., Zazpe, R., Rozenberg, M., Hueso, L.E., Stoliar, P., et al. Resistive switching phenomena in TiOx nanoparticle layers for memory applications. Appl Phys Lett. 2014;105(14).
http://dx.doi.org/10.1063/1.4897142