Navegar

Colección

Datos Estadísticas

Artículo

Estamos trabajando para incorporar este artículo al repositorio
Consulte el artículo en la página del editor
Consulte la política de Acceso Abierto del editor

Abstract:

A resistive random access memory (ReRAM) based on the memristive effect allows high-density integration through a cross-point array (CPA) structure. However, a significant common drawback of the CPA configuration is the crosstalk between cells. Here, we introduce a solution based on a novel heterojunction stack solely made of members of the perovskite manganite family Pr1-xCaxMnO3 (PCMO) and CaMnO3-δ (CMO) which show electroforming-free bipolar resistive switching. The heterojunction consists of rectifying interfaces and shows a symmetrical and tunable non-linear current-voltage curve. The spectromicroscopic measurements support the scenario of specialized roles, with the memristive effect taking place at the active Al-PCMO interface via a redox mechanism, while non-linearity was achieved by adopting a rectifying double interface PCMO-CMO-PCMO. This journal is © The Royal Society of Chemistry.

Registro:

Documento: Artículo
Título:Manganite-based memristive heterojunction with tunable non-linear I-V characteristics
Autor:Lee, H.-S.; Park, H.-H.; Rozenberg, M.J.
Filiación:Department of Materials Science and Engineering, Yonsei University, Seodaemun-Ku, Seoul, 120-749, South Korea
Laboratoire de Physique des Solides, CNRS-UMR 8502 Université Paris-Sud, Orsay, 91405, France
Departamento de Física, FCEN, Universidad de Buenos Aires, Buenos Aires, (1428), Argentina
Palabras clave:Heterojunctions; Manganese oxide; Manganites; Nonvolatile storage; Cross-point array; High-density integration; Non linear; Non-linear I-V; Perovskite manganites; Redox mechanism; Resistive Random Access Memory (ReRAM); Resistive switching; Random access storage
Año:2015
Volumen:7
Número:15
Página de inicio:6444
Página de fin:6450
DOI: http://dx.doi.org/10.1039/c5nr00861a
Título revista:Nanoscale
Título revista abreviado:Nanoscale
ISSN:20403364
Registro:https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_20403364_v7_n15_p6444_Lee

Referencias:

  • Rozenberg, M.J., (2011) Scholarpedia, 6, p. 11414
  • Waser, R., Dittmann, R., Staikov, G., Szot, K., (2009) Adv. Mater., 21, pp. 2632-2663
  • Sawa, A., (2008) Mater. Today, 11, pp. 28-36
  • Herpers, A., Lenser, C., Park, C., Offi, F., Borgatti, F., Panaccione, G., Menzel, S., Dittmann, R., (2014) Adv. Mater., 26, pp. 2730-2735
  • Lee, H.-S., Choi, S.-G., Park, H.-H., Rozenberg, M.J., (2013) Sci. Rep., 3, p. 1704
  • Nian, Y.B., Strozier, J., Wu, N.J., Chen, X., Ignatiev, A., (2007) Phys. Rev. Lett., 98, p. 146403
  • Stoliar, P., Cario, L., Janod, E., Corraze, B., Guillot-Deudon, C., Salmon-Bourmand, S., Guiot, V., Rozenberg, M.J., (2013) Adv. Mater., 25, pp. 3222-3226
  • Waser, R., Aono, M., (2007) Nat. Mater., 6, pp. 833-840
  • Linn, E., Rosezin, R., Kügeler, C., Waser, R., (2010) Nat. Mater., 9, pp. 403-406
  • Lee, M.-J., Lee, C.B., Lee, D., Lee, S.R., Chang, M., Hur, J.H., Kim, Y.-B., Kim, K., (2011) Nat. Mater., 10, pp. 625-630
  • Bae, Y.C., Lee, A.R., Lee, J.B., Koo, J.H., Kwon, K.C., Park, J.G., Im, H.S., Hong, J.P., (2012) Adv. Funct. Mater., 22, pp. 709-716
  • Meyer, R., Schloss, L., Brewer, J., Lambertson, R., Kinney, W., Sanchez, J., Rinerson, D., (2008) Proc. Non-Volatile Mem. Technol. Symp., pp. 1-5
  • Yang, Y., Sheridan, P., Lu, W., (2012) Appl. Phys. Lett., 100, p. 203112
  • Yang, J.J., Zhang, M.-X., Pickett, M.D., Miao, F., Strachan, J.P., Li, W.-D., Yi, W., Williams, R.S., (2012) Appl. Phys. Lett., 100, p. 113501
  • Dagotto, E., Hotta, T., Moreo, A., (2001) Phys. Rep.: Rev. Sec. Phys. Lett., 344, pp. 1-153
  • Norpoth, J., Mildner, S., Scherff, M., Hoffmann, J., Jooss, C., (2014) Nanoscale, 6, pp. 9852-9862
  • Lee, H.-S., Park, C.-S., Park, H.-H., (2014) Appl. Phys. Lett., 104, p. 191604
  • Satpathy, S., Popović, Z.S., Vukajlović, F.R., (1996) Phys. Rev. Lett., 76, pp. 960-963
  • Jung, J.H., Kim, K.H., Eom, D.J., Noh, T.W., Choi, E.J., Yu, J., Kwon, Y.S., Chung, Y., (1997) Phys. Rev. B: Condens. Matter, 55, pp. 15489-15493
  • Bocquet, A.E., Mizokawa, T., Saitoh, T., Namatame, H., Fujimori, A., (1992) Phys. Rev. B: Condens. Matter, 46, pp. 3771-3784
  • Anisimov, V.I., Elfimov, I.S., Korotin, M.A., Terakura, K., (1997) Phys. Rev. B: Condens. Matter, 55, pp. 15494-15499
  • Asanuma, S., Akoh, H., Yamada, H., Sawa, A., (2009) Phys. Rev. B: Condens. Matter, 80, p. 235113
  • Tsubouchi, K., Ohkubo, I., Kumigashira, H., Oshima, M., Matsumoto, Y., Itaka, K., Ohnishi, T., Koinuma, H., (2007) Adv. Matter., 19, pp. 1711-1713
  • Liao, Z.L., Wang, Z.Z., Meng, Y., Liu, Z.Y., Gao, P., Gang, J.L., Zhao, H.W., Chen, D.M., (2009) Appl. Phys. Lett., 94, p. 253503
  • Knorr, N., Bamedi, A., Karipidou, Z., Wirtz, R., Sarpasan, M., Rosselli, S., Nelles, G., (2013) Appl. Phys. Lett., 114, p. 124510
  • Tappertzhofen, S., Valov, I., Tsuruoka, T., Hasegawa, T., Waser, R., Aono, M., (2013) ACS Nano, 7, pp. 6396-6402
  • Amsinck, C.J., Di Spigna, N.H., Nackashi, D.P., Franzon, P.D., (2005) Nanotechnology, 16, pp. 2251-2260
  • Huang, J.-J., Tseng, Y.-M., Hsu, C.-W., Hou, T.-H., (2011) IEEE Electron Device Lett., 32, pp. 1427-1429
  • Cui, Y., Peng, H., Wu, S., Wang, R., Wu, T., (2013) ACS Appl. Mater. Interfaces, 5, pp. 1213-1217
  • Shang, D.S., Wang, Q., Chen, L.D., Dong, R., Li, X.M., Zhang, W.Q., (2006) Phys. Rev. B: Condens. Matter, 73, p. 245427
  • Kim, Y.-E., Park, H., Kim, J.-J., (1996) Appl. Phys. Lett., 69, pp. 599-601

Citas:

---------- APA ----------
Lee, H.-S., Park, H.-H. & Rozenberg, M.J. (2015) . Manganite-based memristive heterojunction with tunable non-linear I-V characteristics. Nanoscale, 7(15), 6444-6450.
http://dx.doi.org/10.1039/c5nr00861a
---------- CHICAGO ----------
Lee, H.-S., Park, H.-H., Rozenberg, M.J. "Manganite-based memristive heterojunction with tunable non-linear I-V characteristics" . Nanoscale 7, no. 15 (2015) : 6444-6450.
http://dx.doi.org/10.1039/c5nr00861a
---------- MLA ----------
Lee, H.-S., Park, H.-H., Rozenberg, M.J. "Manganite-based memristive heterojunction with tunable non-linear I-V characteristics" . Nanoscale, vol. 7, no. 15, 2015, pp. 6444-6450.
http://dx.doi.org/10.1039/c5nr00861a
---------- VANCOUVER ----------
Lee, H.-S., Park, H.-H., Rozenberg, M.J. Manganite-based memristive heterojunction with tunable non-linear I-V characteristics. Nanoscale. 2015;7(15):6444-6450.
http://dx.doi.org/10.1039/c5nr00861a