Artículo
Acha, C.; Schulman, A.; Boudard, M.; Daoudi, K.; Tsuchiya, T. "Transport mechanism through metal-cobaltite interfaces" (2016) Applied Physics Letters. 109(1)
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Abstract:
The resistive switching (RS) properties as a function of temperature were studied for Ag/La1-xSrxCoO3 (LSCO) interfaces. The LSCO is a fully relaxed 100 nm film grown by metal organic deposition on a LaAlO3 substrate. Both low and a high resistance states were set at room temperature, and the temperature dependence of their current-voltage (IV) characteristics was measured taking care to avoid a significant change of the resistance state. The obtained non-trivial IV curves of each state were well reproduced by a circuit model which includes a Poole-Frenkel element and two ohmic resistances. A microscopic description of the changes produced by the RS is given, which enables to envision a picture of the interface as an area where conductive and insulating phases are mixed, producing Maxwell-Wagner contributions to the dielectric properties. © 2016 Author(s).
Registro:
| Documento: | Artículo |
| Título: | Transport mechanism through metal-cobaltite interfaces |
| Autor: | Acha, C.; Schulman, A.; Boudard, M.; Daoudi, K.; Tsuchiya, T. |
| Filiación: | Laboratorio de Bajas Temperaturas, Departamento de Física, FCEyN, Universidad de Buenos Aires and IFIBA, CONICET, Pabellón I, Ciudad Universitaria, Buenos Aires, C1428EHA, Argentina Laboratoire des Matériaux et du Génie Physique, Univ. Grenoble Alpes, LMGP, CNRS, Grenoble, 38000, France National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki, 305-8565, Japan Department of Applied Physics and Astronomy, University of Sharjah, P.O. Box 27272, Sharjah, United Arab Emirates |
| Palabras clave: | Cobalt compounds; Dielectric properties; Ohmic contacts; Organometallics; Circuit modeling; High-resistance state; Insulating phasis; Metal organic deposition; Microscopic description; Resistive switching; Temperature dependence; Transport mechanism; Temperature distribution |
| Año: | 2016 |
| Volumen: | 109 |
| Número: | 1 |
| DOI: | http://dx.doi.org/10.1063/1.4955204 |
| Título revista: | Applied Physics Letters |
| Título revista abreviado: | Appl Phys Lett |
| ISSN: | 00036951 |
| CODEN: | APPLA |
| Registro: | https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00036951_v109_n1_p_Acha |
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Citas:
---------- APA ----------
Acha, C., Schulman, A., Boudard, M., Daoudi, K. & Tsuchiya, T. (2016) . Transport mechanism through metal-cobaltite interfaces. Applied Physics Letters, 109(1).http://dx.doi.org/10.1063/1.4955204
---------- CHICAGO ----------
Acha, C., Schulman, A., Boudard, M., Daoudi, K., Tsuchiya, T. "Transport mechanism through metal-cobaltite interfaces" . Applied Physics Letters 109, no. 1 (2016).http://dx.doi.org/10.1063/1.4955204
---------- MLA ----------
Acha, C., Schulman, A., Boudard, M., Daoudi, K., Tsuchiya, T. "Transport mechanism through metal-cobaltite interfaces" . Applied Physics Letters, vol. 109, no. 1, 2016.http://dx.doi.org/10.1063/1.4955204
---------- VANCOUVER ----------
Acha, C., Schulman, A., Boudard, M., Daoudi, K., Tsuchiya, T. Transport mechanism through metal-cobaltite interfaces. Appl Phys Lett. 2016;109(1).http://dx.doi.org/10.1063/1.4955204
