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Stoliar, P.; Levy, P.; Sanchez, M.J.; Leyva, A.G.; Albornoz, C.A.; Gomez-Marlasca, F.; Zanini, A.; Toro Salazar, C.; Ghenzi, N.; Rozenberg, M.J. "Nonvolatile multilevel resistive switching memory cell: A transition metal oxide-based circuit" (2014) IEEE Transactions on Circuits and Systems II: Express Briefs. 61(1):21-25
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Abstract:

We study the resistive switching (RS) mechanism as a way to obtain multilevel cell (MLC) memory devices. In an MLC, more than 1 b of information can be stored in each cell. Here, we identify one of the main conceptual difficulties that prevented the implementation of RS-based MLCs. We present a method to overcome these difficulties and to implement a 6-b MLC device with a manganite-based RS device. This is done by precisely setting the remnant resistance of the RS device to an arbitrary value. Our MLC system demonstrates that transition metal oxide nonvolatile memory devices may compete with currently available MLCs. © 2004-2012 IEEE.

Registro:

Documento: Artículo
Título:Nonvolatile multilevel resistive switching memory cell: A transition metal oxide-based circuit
Autor:Stoliar, P.; Levy, P.; Sanchez, M.J.; Leyva, A.G.; Albornoz, C.A.; Gomez-Marlasca, F.; Zanini, A.; Toro Salazar, C.; Ghenzi, N.; Rozenberg, M.J.
Filiación:Escuela de Ciencia y Tecnología, Universidad Nacional de San Martín, B1650 HMP San Martín, Argentina
Gerencia Investigación y Aplicaciones, Centro Atómico Constituyentes, Comisión Nacional de Energía Atómica, 1650 San Martín, Argentina
Laboratoire de Physique des Solides, UMR8502, Université Paris Sud, 91405 Orsay, France
Centro Atómico Bariloche, Instituto Balseiro, Comisión Nacional de Energía Atómica (CNEA), 8400 San Carlos de Bariloche, Argentina
Departamento de Ingeniería Química, Facultad de Ingeniería, Universidad de Buenos Aires, 1428 Buenos Aires, Argentina
Departamento de Micro y Nanotecnología, Centro Atómico Constituyentes-Comisión Nacional de Energía Atómica, 1650 San Martín, Argentina
Departamento de Física Juan José Giambiagi, Facultad de Ciencias Exactas y Naturales (FCEN), Universidad de Buenos Aires, 1428 Buenos Aires, Argentina
Laboratoire de Physique des Solides, Université Paris Sud, 91405 Orsay, France
Palabras clave:Multilevel cell (MLC); nonvolatile memory; resistive random access memory (ReRAM); resistive switching (RS); Metallic compounds; Switching systems; Transition metals; Multi level cell (MLC); Multilevel cell (MLC) memory; Multilevel resistive switching; Non-volatile memory; Nonvolatile memory devices; Resistive Random Access Memory (ReRAM); Resistive switching; Transition-metal oxides; Nonvolatile storage
Año:2014
Volumen:61
Número:1
Página de inicio:21
Página de fin:25
DOI: http://dx.doi.org/10.1109/TCSII.2013.2290921
Título revista:IEEE Transactions on Circuits and Systems II: Express Briefs
Título revista abreviado:IEEE Trans. Circuits Syst. Express Briefs
ISSN:15497747
Registro:https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_15497747_v61_n1_p21_Stoliar

Referencias:

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Citas:

---------- APA ----------
Stoliar, P., Levy, P., Sanchez, M.J., Leyva, A.G., Albornoz, C.A., Gomez-Marlasca, F., Zanini, A.,..., Rozenberg, M.J. (2014) . Nonvolatile multilevel resistive switching memory cell: A transition metal oxide-based circuit. IEEE Transactions on Circuits and Systems II: Express Briefs, 61(1), 21-25.
http://dx.doi.org/10.1109/TCSII.2013.2290921
---------- CHICAGO ----------
Stoliar, P., Levy, P., Sanchez, M.J., Leyva, A.G., Albornoz, C.A., Gomez-Marlasca, F., et al. "Nonvolatile multilevel resistive switching memory cell: A transition metal oxide-based circuit" . IEEE Transactions on Circuits and Systems II: Express Briefs 61, no. 1 (2014) : 21-25.
http://dx.doi.org/10.1109/TCSII.2013.2290921
---------- MLA ----------
Stoliar, P., Levy, P., Sanchez, M.J., Leyva, A.G., Albornoz, C.A., Gomez-Marlasca, F., et al. "Nonvolatile multilevel resistive switching memory cell: A transition metal oxide-based circuit" . IEEE Transactions on Circuits and Systems II: Express Briefs, vol. 61, no. 1, 2014, pp. 21-25.
http://dx.doi.org/10.1109/TCSII.2013.2290921
---------- VANCOUVER ----------
Stoliar, P., Levy, P., Sanchez, M.J., Leyva, A.G., Albornoz, C.A., Gomez-Marlasca, F., et al. Nonvolatile multilevel resistive switching memory cell: A transition metal oxide-based circuit. IEEE Trans. Circuits Syst. Express Briefs. 2014;61(1):21-25.
http://dx.doi.org/10.1109/TCSII.2013.2290921