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Tesler, F.; Tang, S.; Dobrosavljević, V.; Rozenberg, M.; Jaffres H.; Razeghi M.; Drouhin H.-J.; Wegrowe J.-E.; The Society of Photo-Optical Instrumentation Engineers (SPIE) "Shock waves in binary oxides memristors" (2017) Spintronics X Symposium. 10357
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Abstract:

Progress of silicon based technology is nearing its physical limit, as minimum feature size of components is reaching a mere 5 nm. The resistive switching behavior of transition metal oxides and the associated memristor device is emerging as a competitive technology for next generation electronics. Significant progress has already been made in the past decade and devices are beginning to hit the market; however, it has been mainly the result of empirical trial and error. Hence, gaining theoretical insight is of essence. In the present work we report a new connection between the resistive switching and shock wave formation, a classic topic of non-linear dynamics. We argue that the profile of oxygen ions that migrate during the commutation in insulating binary oxides may form a shock wave, which propagates through a poorly conductive region of the device. We validate the scenario by means of model simulations. © 2017 SPIE.

Registro:

Documento: Conferencia
Título:Shock waves in binary oxides memristors
Autor:Tesler, F.; Tang, S.; Dobrosavljević, V.; Rozenberg, M.; Jaffres H.; Razeghi M.; Drouhin H.-J.; Wegrowe J.-E.; The Society of Photo-Optical Instrumentation Engineers (SPIE)
Filiación:Departamento de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Buenos Aires and IFIBA, CONICET, Cuidad Universitaria, Buenos Aires, 1428, Argentina
Department of Physics and Department of Statistics, Florida State University, Tallahassee, FL 32306, United States
Department of Physics and National High Magnetic Field Laboratory, Florida State University, Tallahassee, FL 32306, United States
Laboratoire de Physique des Solides, CNRS, Univ. Paris-Sud, Université Paris-Saclay, Orsay Cedex, 91405, France
Physics Department, University of California, San Diego, CA 92093, United States
Palabras clave:Memristors; Resistive Switching; Shock Waves; Bins; Magnetoelectronics; Memristors; Transition metal compounds; Transition metals; Minimum feature sizes; Model simulation; Non-linear dynamics; Resistive switching; Resistive switching behaviors; Silicon-based technology; Transition-metal oxides; Trial and error; Shock waves
Año:2017
Volumen:10357
DOI: http://dx.doi.org/10.1117/12.2277977
Título revista:Spintronics X Symposium
Título revista abreviado:Proc SPIE Int Soc Opt Eng
ISSN:0277786X
CODEN:PSISD
Registro:https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_0277786X_v10357_n_p_Tesler

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Citas:

---------- APA ----------
Tesler, F., Tang, S., Dobrosavljević, V., Rozenberg, M., Jaffres H., Razeghi M., Drouhin H.-J.,..., The Society of Photo-Optical Instrumentation Engineers (SPIE) (2017) . Shock waves in binary oxides memristors. Spintronics X Symposium, 10357.
http://dx.doi.org/10.1117/12.2277977
---------- CHICAGO ----------
Tesler, F., Tang, S., Dobrosavljević, V., Rozenberg, M., Jaffres H., Razeghi M., et al. "Shock waves in binary oxides memristors" . Spintronics X Symposium 10357 (2017).
http://dx.doi.org/10.1117/12.2277977
---------- MLA ----------
Tesler, F., Tang, S., Dobrosavljević, V., Rozenberg, M., Jaffres H., Razeghi M., et al. "Shock waves in binary oxides memristors" . Spintronics X Symposium, vol. 10357, 2017.
http://dx.doi.org/10.1117/12.2277977
---------- VANCOUVER ----------
Tesler, F., Tang, S., Dobrosavljević, V., Rozenberg, M., Jaffres H., Razeghi M., et al. Shock waves in binary oxides memristors. Proc SPIE Int Soc Opt Eng. 2017;10357.
http://dx.doi.org/10.1117/12.2277977