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MOS devices
14
"Comparative analysis of MIS capacitance structures with high-k dielectrics under gamma, 16O and p Radiation" (2012) Quinteros, C.P.;Salomone, L.S.;Redin, E. (...)Campabadal, F. IEEE Transactions on Nuclear Science. 59(4 PART 1):767-772
"Comparative analysis of MIS capacitance structures with high-k dielectrics under gamma, 16O and p Radiation" (2012) Quinteros, C.P.;Salomone, L.S.;Redin, E. (...)Campabadal, F. IEEE Transactions on Nuclear Science. 59(4 PART 1):767-772
"Charge trapping/detrapping in HfO2-based MOS devices" (2011) Salomone, L.S.;Carbonetto, S.H.;Inza, M.A.G. (...)Faigón, A. 2011 Argentine School of Micro-Nanoelectronics, Technology and Applications, EAMTA 2011:113-117
"Charge trapping/detrapping in HfO2-based MOS devices" (2011) Salomone, L.S.;Carbonetto, S.H.;Inza, M.A.G. (...)Faigón, A. 2011 Argentine School of Micro-Nanoelectronics, Technology and Applications, EAMTA 2011:113-117
"Zero temperature coefficient bias in MOS devices. Dependence on interface traps density, application to MOS dosimetry" (2011) Carbonetto, S.H.;García Inza, M.A.;Lipovetzky, J. (...)Faigon, A. IEEE Transactions on Nuclear Science. 58(6 PART 2):3348-3353
"Zero temperature coefficient bias in MOS devices. Dependence on interface traps density, application to MOS dosimetry" (2011) Carbonetto, S.H.;García Inza, M.A.;Lipovetzky, J. (...)Faigon, A. IEEE Transactions on Nuclear Science. 58(6 PART 2):3348-3353
"Comparative analysis of MIS capacitive structures with high-K dielectrics under gamma, 16O and p radiation" (2011) Quinteros, C.;Sambuco Salomone, L.;Redín, E. (...)Campabadal, F. 12th European Conference on Radiation and Its Effects on Component and Systems, RADECS 2011:67-72
"Comparative analysis of MIS capacitive structures with high-K dielectrics under gamma, 16O and p radiation" (2011) Quinteros, C.;Sambuco Salomone, L.;Redín, E. (...)Campabadal, F. 12th European Conference on Radiation and Its Effects on Component and Systems, RADECS 2011:67-72
"Ring oscillators response to irradiation and application to dosimetry" (2009) Carbonetto, S.;Lipovetzky, J.;Inza, M.G. (...)Faigón, A. Argentine School of Micro-Nanoelectronics, Technology and Applications 2009, EAMTA 2009:1-4
"Ring oscillators response to irradiation and application to dosimetry" (2009) Carbonetto, S.;Lipovetzky, J.;Inza, M.G. (...)Faigón, A. Argentine School of Micro-Nanoelectronics, Technology and Applications 2009, EAMTA 2009:1-4
"Temperature effects on metal oxide semiconductor dosimeters during switched bias irradiation" (2009) Lipovetzky, J.;Redin, E.;Inza, M.G. (...)Faigón, A. Argentine School of Micro-Nanoelectronics, Technology and Applications 2009, EAMTA 2009:41-45
"Stand alone MOS dosimetry system for high dose ionizing radiation" (2009) Inza, M.G.;Lipovetzky, J.;Redin, E. (...)Faigon, A. Argentine School of Micro-Nanoelectronics, Technology and Applications 2009, EAMTA 2009:27-30
"Extension of the measurement range of MOS dosimeters using radiation induced charge neutralization" (2008) Faigón, A.; Lipovetzky, J.; Redin, E.; Krusczenski, G. IEEE Transactions on Nuclear Science. 55(4):2141-2147
"Extension of the measurement range of MOS dosimeters using radiation induced charge neutralization" (2008) Faigón, A.; Lipovetzky, J.; Redin, E.; Krusczenski, G. IEEE Transactions on Nuclear Science. 55(4):2141-2147