Abstract:
A Metal Oxide Semiconductor (MOS) dosimetry system prototype for measurement of high dose ionizing radiation is presented. The hardware design target is to implement the Bias Controlled Cycled Measurement (BCCM) novel technique. An 8 bit microcontroller is used to control the measurement and the biasing of 4 independent MOS sensors, to interface an RS232 port for PC communications and to handle a Human Machine Interface (HMI) for basic operation. Measurement results are presented.
Registro:
| Documento: |
Conferencia
|
| Título: | Stand alone MOS dosimetry system for high dose ionizing radiation |
| Autor: | Inza, M.G.; Lipovetzky, J.; Redin, E.; Carbonetto, S.; Faigon, A. |
| Ciudad: | Bariloche |
| Filiación: | Device Physics Laboratory-Microelectronics, Departamento de Fisica, Universidad de Buenos Aires, Av. Paseo Colon 850, Buenos Aires, C1063ACV, Argentina
|
| Palabras clave: | 8-bit microcontrollers; Basic operation; Hardware design; High dose; Human machine interface; Measurement results; Metal oxide semiconductor; MOS sensors; Novel techniques; Stand -alone; System prototype; Dosimeters; Ionizing radiation; Metallic compounds; MOS devices; Nanoelectronics; Radiation shielding; Radioactivity; Dosimetry |
| Año: | 2009
|
| Página de inicio: | 27
|
| Página de fin: | 30
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| DOI: |
http://dx.doi.org/10.1109/EAMTA.2009.5288903 |
| Título revista: | Argentine School of Micro-Nanoelectronics, Technology and Applications 2009, EAMTA 2009
|
| Título revista abreviado: | Proc. Argent. Sch. Micro-Nanoelectronics, Technol. Appl., EAMTA
|
| Registro: | https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_97814244_v_n_p27_Inza |
Referencias:
- Oldham, T., Ionizing Radiation Effects in MOS Oxides (1999) Advances in Solid State Electronics and Technology Series, , Singapore: World Scientific
- Oldham, T., McLean, F., Total Ionizing Effects in MOS oxides and Devices (2003) IEEE Trans. Nucl. Sci, 50 (3), pp. 483-499
- Hughes, H., Benedetto, J., Radiation Effects and hardening of MOS Technology: Devices and Circuits (2003) IEEE Trans. Nucl. Sci, 50 (3), pp. 500-520
- Poch, W., Holmes-Siedle, A., Long-Term Effects Of Radiation On Complementary Mos Logic Networks (1970) IEEE Trans. Nucl. Sci, 17 (6), pp. 33-40
- Holmes-Siedle, A., Adams, L., RADFETs: A Review of the Use of Metal-Oxide-Silicon Devices as Integrating Dosimeters Radiation Physics and Chemistry, 28 (2), pp. 235-244
- Faigon, A., Lipovetzky, J., Redin, E., Krusczenski, G., Extension of the Measurement Range of MOS Dosimeters Using Radiation Induced Charge Neutralization (2008) IEEE Trans Nucl Sci, 55 (4), pp. 2141-2147
- Fleetwood, D., Winokur, P., Riewe, L., Predicting switched-bias response from steady-state irradiations MOS transistors (1990) IEEE Trans. Nucl. Sci, 37 (6), pp. 1806-1817
- Fleetwood, D., Radiation-induced charge neutralization and interface-trap buildup in metal-oxide-semiconductor devices (1990) Jour. Appl. Phys, 67 (1), pp. 580-583
- Sze, S., Physics of Semiconductor devices, 3rd edition, , Willey, ISBN: 978-0-471-14323-9
- Kelleher, A., McDonnell, N., O'Neill, B., Lane, W., Adams, L., Investigation into the re-use of PMOS dosimeters (1994) IEEE Trans.son Nuc. Sci, 41, pp. 445-451. , 3, 2, pp
- Boesch, H., McGarrity, J., McLean, F., Temperature-and Field-Dependent Charge Relaxation in SiO2 Gate Insulators (1978) IEEE Trans, on Nucl. Sci, 25 (3), pp. 1012-1016
- Lipovetzky, J., Garcia Inza, M., Carbonetto, S., Redin, E., Faigon, A., Temperature and interface traps compensation in MOS Bias Controlled Cycled Dosimeters (2008) Proc. of the third Argentine School of Micro-Nanoelectronics, Technology and Applications (EAMTA 2008), pp. 23-28A4 - IEEE; CAS; UCC; INTI; INVAP
Citas:
---------- APA ----------
Inza, M.G., Lipovetzky, J., Redin, E., Carbonetto, S. & Faigon, A.
(2009)
. Stand alone MOS dosimetry system for high dose ionizing radiation. Argentine School of Micro-Nanoelectronics, Technology and Applications 2009, EAMTA 2009, 27-30.
http://dx.doi.org/10.1109/EAMTA.2009.5288903---------- CHICAGO ----------
Inza, M.G., Lipovetzky, J., Redin, E., Carbonetto, S., Faigon, A.
"Stand alone MOS dosimetry system for high dose ionizing radiation"
. Argentine School of Micro-Nanoelectronics, Technology and Applications 2009, EAMTA 2009
(2009) : 27-30.
http://dx.doi.org/10.1109/EAMTA.2009.5288903---------- MLA ----------
Inza, M.G., Lipovetzky, J., Redin, E., Carbonetto, S., Faigon, A.
"Stand alone MOS dosimetry system for high dose ionizing radiation"
. Argentine School of Micro-Nanoelectronics, Technology and Applications 2009, EAMTA 2009, 2009, pp. 27-30.
http://dx.doi.org/10.1109/EAMTA.2009.5288903---------- VANCOUVER ----------
Inza, M.G., Lipovetzky, J., Redin, E., Carbonetto, S., Faigon, A. Stand alone MOS dosimetry system for high dose ionizing radiation. Proc. Argent. Sch. Micro-Nanoelectronics, Technol. Appl., EAMTA. 2009:27-30.
http://dx.doi.org/10.1109/EAMTA.2009.5288903