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Carbonetto, S.H.; García Inza, M.A.; Lipovetzky, J.; Redin, E.G.; Sambuco Salomone, L.; Faigon, A. "Zero temperature coefficient bias in MOS devices. Dependence on interface traps density, application to MOS dosimetry" (2011) IEEE Transactions on Nuclear Science. 58(6 PART 2):3348-3353
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Abstract:

In this paper the influence of temperature fluctuations on the response of thick gate oxide metal oxide semiconductor dosimeters is reviewed and the zero temperature coefficient (ZTC) method is evaluated for error compensation. The response of the ZTC current to irradiation is studied showing that the error compensation impoverishes with absorbed dose. Finally, an explanation and analytic expression for the shifts in the ZTC current with irradiation based on the interface traps creation is proposed and verified with experimental data. © 2011 IEEE.

Registro:

Documento: Artículo
Título:Zero temperature coefficient bias in MOS devices. Dependence on interface traps density, application to MOS dosimetry
Autor:Carbonetto, S.H.; García Inza, M.A.; Lipovetzky, J.; Redin, E.G.; Sambuco Salomone, L.; Faigon, A.
Filiación:Device Physics-Microelectronics Laboratory, Departamento de Física, Universidad de Buenos Aires, C1063 ACV, Ciudad Autónoma de Buenos Aires, Argentina
National Research Council of Argentina (CONICET), CP C1033 AAJ, Ciudad de Buenos Aires, Argentina
Palabras clave:Dosimetry; ionizing radiation sensors; MOS devices; radiation effects; temperature; Absorbed dose; Analytic expressions; Experimental data; Interface traps; Metal oxide semiconductor; Temperature fluctuation; Thick gate oxides; Zero temperature coefficients; Dosimetry; Error compensation; Ionizing radiation; Irradiation; Metallic compounds; Radiation effects; Radiation shielding; Semiconductor devices; Temperature; MOS devices
Año:2011
Volumen:58
Número:6 PART 2
Página de inicio:3348
Página de fin:3353
DOI: http://dx.doi.org/10.1109/TNS.2011.2170430
Título revista:IEEE Transactions on Nuclear Science
Título revista abreviado:IEEE Trans Nucl Sci
ISSN:00189499
CODEN:IETNA
Registro:https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00189499_v58_n6PART2_p3348_Carbonetto

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Citas:

---------- APA ----------
Carbonetto, S.H., García Inza, M.A., Lipovetzky, J., Redin, E.G., Sambuco Salomone, L. & Faigon, A. (2011) . Zero temperature coefficient bias in MOS devices. Dependence on interface traps density, application to MOS dosimetry. IEEE Transactions on Nuclear Science, 58(6 PART 2), 3348-3353.
http://dx.doi.org/10.1109/TNS.2011.2170430
---------- CHICAGO ----------
Carbonetto, S.H., García Inza, M.A., Lipovetzky, J., Redin, E.G., Sambuco Salomone, L., Faigon, A. "Zero temperature coefficient bias in MOS devices. Dependence on interface traps density, application to MOS dosimetry" . IEEE Transactions on Nuclear Science 58, no. 6 PART 2 (2011) : 3348-3353.
http://dx.doi.org/10.1109/TNS.2011.2170430
---------- MLA ----------
Carbonetto, S.H., García Inza, M.A., Lipovetzky, J., Redin, E.G., Sambuco Salomone, L., Faigon, A. "Zero temperature coefficient bias in MOS devices. Dependence on interface traps density, application to MOS dosimetry" . IEEE Transactions on Nuclear Science, vol. 58, no. 6 PART 2, 2011, pp. 3348-3353.
http://dx.doi.org/10.1109/TNS.2011.2170430
---------- VANCOUVER ----------
Carbonetto, S.H., García Inza, M.A., Lipovetzky, J., Redin, E.G., Sambuco Salomone, L., Faigon, A. Zero temperature coefficient bias in MOS devices. Dependence on interface traps density, application to MOS dosimetry. IEEE Trans Nucl Sci. 2011;58(6 PART 2):3348-3353.
http://dx.doi.org/10.1109/TNS.2011.2170430