Abstract:
The charge trapping/detrapping under normal operating conditions in MOS devices with HfO2 as insulating layer is studied. The hysteresis in the capacitance-voltage curves was analyzed and the voltage for a given capacitance was tracked in time. A simple tunneling front model is proposed in order to reproduce the observed curves and to obtain the relevant physical parameters. © 2011 EDIUNS.
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Documento: |
Conferencia
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Título: | Charge trapping/detrapping in HfO2-based MOS devices |
Autor: | Salomone, L.S.; Carbonetto, S.H.; Inza, M.A.G.; Lipovetzky, J.; Redín, E.G.; Campabadal, F.; Faigón, A. |
Ciudad: | Buenos Aires |
Filiación: | Device Physics Laboratory-Microelectronics, Departamento de Física, Universidad de Buenos Aires, C1063ACV, Buenos Aires, Argentina Instituto de Ciencias de la Ingeniería (INTECIN), Argentina Consejo Nacional de Investigaciones Cientìficas Y Técnicas (CONICET), Argentina Instituto de Microelectrónica de Barcelona, Centro Nacional de Microelectrónica, Consejo Superior de Investigaciones Científicas (CSIC), Spain
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Palabras clave: | High-K gate dielectrics; hysteresis; MOS devices; Capacitance-voltage curve; Charge trapping/detrapping; High-k gate dielectrics; Insulating layers; Normal operating conditions; Physical parameters; Capacitance; Gate dielectrics; Hafnium oxides; Hysteresis; Nanoelectronics; MOS devices |
Año: | 2011
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Página de inicio: | 113
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Página de fin: | 117
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Título revista: | 2011 Argentine School of Micro-Nanoelectronics, Technology and Applications, EAMTA 2011
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Título revista abreviado: | Argent. Sch. Micro-Nanoelectronics, Technol. Appl., EAMTA
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Registro: | https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_97898716_v_n_p113_Salomone |
Referencias:
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Citas:
---------- APA ----------
Salomone, L.S., Carbonetto, S.H., Inza, M.A.G., Lipovetzky, J., Redín, E.G., Campabadal, F. & Faigón, A.
(2011)
. Charge trapping/detrapping in HfO2-based MOS devices. 2011 Argentine School of Micro-Nanoelectronics, Technology and Applications, EAMTA 2011, 113-117.
Recuperado de https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_97898716_v_n_p113_Salomone [ ]
---------- CHICAGO ----------
Salomone, L.S., Carbonetto, S.H., Inza, M.A.G., Lipovetzky, J., Redín, E.G., Campabadal, F., et al.
"Charge trapping/detrapping in HfO2-based MOS devices"
. 2011 Argentine School of Micro-Nanoelectronics, Technology and Applications, EAMTA 2011
(2011) : 113-117.
Recuperado de https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_97898716_v_n_p113_Salomone [ ]
---------- MLA ----------
Salomone, L.S., Carbonetto, S.H., Inza, M.A.G., Lipovetzky, J., Redín, E.G., Campabadal, F., et al.
"Charge trapping/detrapping in HfO2-based MOS devices"
. 2011 Argentine School of Micro-Nanoelectronics, Technology and Applications, EAMTA 2011, 2011, pp. 113-117.
Recuperado de https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_97898716_v_n_p113_Salomone [ ]
---------- VANCOUVER ----------
Salomone, L.S., Carbonetto, S.H., Inza, M.A.G., Lipovetzky, J., Redín, E.G., Campabadal, F., et al. Charge trapping/detrapping in HfO2-based MOS devices. Argent. Sch. Micro-Nanoelectronics, Technol. Appl., EAMTA. 2011:113-117.
Available from: https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_97898716_v_n_p113_Salomone [ ]