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Lipovetzky, J.; Redin, E.; Inza, M.G.; Carbonetto, S.; Faigón, A. "Temperature effects on metal oxide semiconductor dosimeters during switched bias irradiation" (2009) Argentine School of Micro-Nanoelectronics, Technology and Applications 2009, EAMTA 2009:41-45
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Abstract:

The responses to gamma-irradiation of 70 nm and 140 nm gate oxide thickness MOS dosimeters are characterized at different temperatures during oxide charge buildup and radiation induced charge neutralization. Three contributions to the threshold voltage evolution are observed at different ranges of temperatures and gate voltages: a shift in VT caused by a change in the built in potential, thermal annealing which occurs even during irradiation, and a third contribution probably associated with changes of transport or capture parameters with temperature.

Registro:

Documento: Conferencia
Título:Temperature effects on metal oxide semiconductor dosimeters during switched bias irradiation
Autor:Lipovetzky, J.; Redin, E.; Inza, M.G.; Carbonetto, S.; Faigón, A.
Ciudad:Bariloche
Filiación:Device Physics Laboratory-Microelectronics, Departamento de Física, Universidad de Buenos Aires, Av. Paseo Colón 850, Buenos Aires, C1063ACV, Argentina
Palabras clave:Built-in potential; Gamma irradiation; Gate oxide thickness; Gate voltages; Metal oxide semiconductor; Mos dosimeter; Oxide charge; Radiation-induced; Switched bias; Temperature effects; Thermal-annealing; Dosimeters; Dosimetry; Metallic compounds; MOS devices; Nanoelectronics; Irradiation
Año:2009
Página de inicio:41
Página de fin:45
DOI: http://dx.doi.org/10.1109/EAMTA.2009.5288902
Título revista:Argentine School of Micro-Nanoelectronics, Technology and Applications 2009, EAMTA 2009
Título revista abreviado:Proc. Argent. Sch. Micro-Nanoelectronics, Technol. Appl., EAMTA
Registro:https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_97814244_v_n_p41_Lipovetzky

Referencias:

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Citas:

---------- APA ----------
Lipovetzky, J., Redin, E., Inza, M.G., Carbonetto, S. & Faigón, A. (2009) . Temperature effects on metal oxide semiconductor dosimeters during switched bias irradiation. Argentine School of Micro-Nanoelectronics, Technology and Applications 2009, EAMTA 2009, 41-45.
http://dx.doi.org/10.1109/EAMTA.2009.5288902
---------- CHICAGO ----------
Lipovetzky, J., Redin, E., Inza, M.G., Carbonetto, S., Faigón, A. "Temperature effects on metal oxide semiconductor dosimeters during switched bias irradiation" . Argentine School of Micro-Nanoelectronics, Technology and Applications 2009, EAMTA 2009 (2009) : 41-45.
http://dx.doi.org/10.1109/EAMTA.2009.5288902
---------- MLA ----------
Lipovetzky, J., Redin, E., Inza, M.G., Carbonetto, S., Faigón, A. "Temperature effects on metal oxide semiconductor dosimeters during switched bias irradiation" . Argentine School of Micro-Nanoelectronics, Technology and Applications 2009, EAMTA 2009, 2009, pp. 41-45.
http://dx.doi.org/10.1109/EAMTA.2009.5288902
---------- VANCOUVER ----------
Lipovetzky, J., Redin, E., Inza, M.G., Carbonetto, S., Faigón, A. Temperature effects on metal oxide semiconductor dosimeters during switched bias irradiation. Proc. Argent. Sch. Micro-Nanoelectronics, Technol. Appl., EAMTA. 2009:41-45.
http://dx.doi.org/10.1109/EAMTA.2009.5288902