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Quinteros, C.P.; Salomone, L.S.; Redin, E.; Rafí, J.M.; Zabala, M.; Faigón, A.; Palumbo, F.; Campabadal, F. "Comparative analysis of MIS capacitance structures with high-k dielectrics under gamma, 16O and p Radiation" (2012) IEEE Transactions on Nuclear Science. 59(4 PART 1):767-772
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Abstract:

MIS capacitance structures, with Hafnium Oxide, Alumina and nanolaminate as dielectrics were studied under gamma photons 60Co, 25 MeV oxygen ions and 10 MeV protons radiation using capacitance-voltage (C-V) characterization. © 2012 IEEE.

Registro:

Documento: Artículo
Título:Comparative analysis of MIS capacitance structures with high-k dielectrics under gamma, 16O and p Radiation
Autor:Quinteros, C.P.; Salomone, L.S.; Redin, E.; Rafí, J.M.; Zabala, M.; Faigón, A.; Palumbo, F.; Campabadal, F.
Filiación:Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET), CNEA, San Martín 1650, Argentina
Device Physics Laboratory-Microelectronics, Physics Department, University of Buenos Aires, Buenos Aires, Argentina
CONICET, San Martín 1650, Argentina
Instituto de Microelectrónica de Barcelona, Centro Nacional de Microelectrónica, Consejo Superior de Investigaciones Científicas (CSIC), Barcelona, Spain
Palabras clave:High-k gate dielectrics; MOS devices; radiation effects; Capacitance voltage; Comparative analysis; Gamma photons; High-k dielectric; High-k gate dielectrics; Nanolaminate; Oxygen ions; Alumina; Hafnium oxides; MOS devices; Radiation effects; Capacitance
Año:2012
Volumen:59
Número:4 PART 1
Página de inicio:767
Página de fin:772
DOI: http://dx.doi.org/10.1109/TNS.2012.2187217
Título revista:IEEE Transactions on Nuclear Science
Título revista abreviado:IEEE Trans Nucl Sci
ISSN:00189499
CODEN:IETNA
Registro:https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00189499_v59_n4PART1_p767_Quinteros

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Citas:

---------- APA ----------
Quinteros, C.P., Salomone, L.S., Redin, E., Rafí, J.M., Zabala, M., Faigón, A., Palumbo, F.,..., Campabadal, F. (2012) . Comparative analysis of MIS capacitance structures with high-k dielectrics under gamma, 16O and p Radiation. IEEE Transactions on Nuclear Science, 59(4 PART 1), 767-772.
http://dx.doi.org/10.1109/TNS.2012.2187217
---------- CHICAGO ----------
Quinteros, C.P., Salomone, L.S., Redin, E., Rafí, J.M., Zabala, M., Faigón, A., et al. "Comparative analysis of MIS capacitance structures with high-k dielectrics under gamma, 16O and p Radiation" . IEEE Transactions on Nuclear Science 59, no. 4 PART 1 (2012) : 767-772.
http://dx.doi.org/10.1109/TNS.2012.2187217
---------- MLA ----------
Quinteros, C.P., Salomone, L.S., Redin, E., Rafí, J.M., Zabala, M., Faigón, A., et al. "Comparative analysis of MIS capacitance structures with high-k dielectrics under gamma, 16O and p Radiation" . IEEE Transactions on Nuclear Science, vol. 59, no. 4 PART 1, 2012, pp. 767-772.
http://dx.doi.org/10.1109/TNS.2012.2187217
---------- VANCOUVER ----------
Quinteros, C.P., Salomone, L.S., Redin, E., Rafí, J.M., Zabala, M., Faigón, A., et al. Comparative analysis of MIS capacitance structures with high-k dielectrics under gamma, 16O and p Radiation. IEEE Trans Nucl Sci. 2012;59(4 PART 1):767-772.
http://dx.doi.org/10.1109/TNS.2012.2187217