"Charge trapping/detrapping in HfO2-based MOS devices" (2011) Salomone, L.S.;Carbonetto, S.H.;Inza, M.A.G. (...)Faigón, A. 2011 Argentine School of Micro-Nanoelectronics, Technology and Applications, EAMTA 2011:113-117

"Temperature error minimization in low dose radiation measurements with 140 nm MOS dosimeters" (2010) Carbonetto, S.H.;Inza, M.A.G.;Lipovetzky, J. (...)Faigón, A. 4th Argentine School of Micro-Nanoelectronics, Technology and Applications and 1st Uruguay School of Micro-Nanoelectronics, Technology and Applications, EAMTA 2010:71-75

"Radiation effects on high-k dielectrics. Measurement technique and first results" (2010) Salomone, L.S.;Kasulin, A.;Inza, M.G. (...)Faigón, A. 4th Argentine School of Micro-Nanoelectronics, Technology and Applications and 1st Uruguay School of Micro-Nanoelectronics, Technology and Applications, EAMTA 2010:66-70

"Ring oscillators response to irradiation and application to dosimetry" (2009) Carbonetto, S.;Lipovetzky, J.;Inza, M.G. (...)Faigón, A. Argentine School of Micro-Nanoelectronics, Technology and Applications 2009, EAMTA 2009:1-4

"Temperature effects on metal oxide semiconductor dosimeters during switched bias irradiation" (2009) Lipovetzky, J.;Redin, E.;Inza, M.G. (...)Faigón, A. Argentine School of Micro-Nanoelectronics, Technology and Applications 2009, EAMTA 2009:41-45

"Stand alone MOS dosimetry system for high dose ionizing radiation" (2009) Inza, M.G.;Lipovetzky, J.;Redin, E. (...)Faigon, A. Argentine School of Micro-Nanoelectronics, Technology and Applications 2009, EAMTA 2009:27-30