Registro:

Referencias:

• Gusev, E.P., Cartier, E., Buchanan, D.A., Gribelyuk, M., Copel, M., Okorn-Schmidt, H., D'Emic, C., Ultrathin high-K metal oxides on silicon: Processing, characterization and integration issues (2001) Microelectronic Engineering, 59 (1-4), pp. 341-349. , DOI 10.1016/S0167-9317(01)00667-0, PII S0167931701006670
• Stathis, J.H., Physical and predictive models of ultrathin oxide reliability in CMOS Devices and Circuits (2001) IEEE Transactions on Device and Materials Reliability, 1 (1)
• Stathis, J.H., Percolation model for gate oxide breakdown (1999) Journal of Applied Physics, 86 (10)
• Fischetti, M.V., Laux, S.E., Performance degradation of small silicon devices caused by long-range Coulomb interactions (2000) Applied Physics Letters, 76 (16)
• Javey, A., Kim, H., Brink, M., Wang, Q., Ural, A., Guo, J., McIntyre, P., Dai, H., High-k dielectrics for advanced carbon-nanotube transistors and logic gates (2002) Nature Materials, 1, pp. 241-246
• Kuo, Y., Mixed oxide high-k gate dielectrics - Interface layer structure, breakdown mechanism, and memories (2006) ECS 210th Meeting
• Seo, K., Sreenivasan, R., McIntyre, P.C., Saraswat, K.C., Improvement in High-k (HfO2-SiO2) reliability by incorporation of fluorine (2006) IEEE Electron Device Letters, 27 (10)
• Zhang, J.F., Zhao, C.Z., Chen, A.H., Groeseneken, G., Degraeve, R., Hole traps in silicon dioxides-part i: Properties (2004) IEEE Transactions on Electron Devices, 51 (8)
• Zhao, C.Z., Zhang, J.F., Groeseneken, G., Degraeve, R., Hole traps in silicon dioxides-part II: Generation mechanism (2004) IEEE Transactions on Electron Devices, 51 (8)
• Zhao, C.Z., Zhang, J.F., Chang, M.H., Peaker, A.R., Hall, S., Groeseneken, G., Pantisano, L., Heyns, M., Stress- induced positive charge in hf-based gate dielectrics: Impact on device performance and a framework for the defect (2008) IEEE Transactions on Electron Devices, 55 (7)
• Chang, M.H., Shang, J.F., On positive charge formed under negative bias temperature stress (2007) Journal of Applied Physics, 101
• Zhang, J.F., Zhao, C.Z., Chang, M.H., Zahid, M.B., Peaker, A.R., Hall, S., Groeseneken, G., Heyns, M., Impact of different defects on the kinetics of negative bias temperature instability of hafnium stacks (2008) Applied Physics Letters, 92
• Zhang, J.F., Defects and instabilities in Hf-dielectric/SiON stacks (2009) Microelectronic Engineering
• Harris, H.R., Choi, R., Sim, J.H., Young, C.D., Majhi, P., Lee, B.H., Bersuker, G., Electrical observation of deep traps in high-/metal gate stack transistors (2005) IEEE Electron Device Letters, 26 (11)
• Felix, J.A., Fleetwood, D.M., Schrimpf, R.D., Hong, J.G., Lucovsky, G., Schwank, J.R., Shaneyfelt, M.R., Total-dose radiation response of hafnium- silicate capacitors (2002) IEEE Transactions on Nuclear Science, 49 (6)
• Zhao, C.Z., Taylor, S., Werner, M., Chalker, P.R., Potter, R.J., Gaskell, J.M., Jones, A.C., High-k materials and their response to gamma ray radiation (2009) Journal of Vacuum Science and Technology B, 27, pp. 411-415
• Zhao, C.Z., Werner, M., Taylor, S., Chalker, P.R., Potter, R.J., Gaskell, J.M., High-k dielectrics' radiation response to x-ray and gammaray exposure (2009) IEEE Proceedings of 16th IPFA
• Ergin, F.B., Turan, R., Shishiyanu, S.T., Yilmaz, E., Effect of gamma-radiation on HfO2 based MOS capacitor Nuclear Instruments and Methods in Physics Research B, 268 (2010), pp. 1482-1485A4 - SSCS; CAS; MOSIS; IEEE; ANII

Citas:

---------- APA ----------

---------- CHICAGO ----------

---------- MLA ----------

---------- VANCOUVER ----------