Abstract:
The possibility to track the threshold voltage shifts caused by ionizing radiation in MOS dosimeters in a Zero Temperature Coefficient reference current is studied. 140 nm gate oxide p-channel MOS transistors were irradiated with a high dose rate 60Co γ-source to characterize their sensitivity to radiation. Results show that the error introduced by temperature can be minimized in one order of magnitude if the ZTC reference current is applied, but that the error increases as the device is irradiated.
Registro:
| Documento: |
Conferencia
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| Título: | Temperature error minimization in low dose radiation measurements with 140 nm MOS dosimeters |
| Autor: | Carbonetto, S.H.; Inza, M.A.G.; Lipovetzky, J.; Redin, E.G.; Salomone, L.S.; Kasulin, A.; Faigón, A. |
| Ciudad: | Montevideo |
| Filiación: | Laboratorio de Física de Dispositivos-Microelectrónica, Departamento de Física, Universidad de Buenos Aires, Av. Paseo Colón 850, Buenos Aires, Argentina
CONICET, Argentina
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| Palabras clave: | Dosimetry; MOSFETs; Radiation monitoring; Temperature; Gate oxide; High dose rate; Low dose radiation; Mos dosimeter; MOSFETs; Order of magnitude; P-channel MOS; Radiation monitoring; Reference currents; Temperature error; Threshold voltage shifts; Zero temperature coefficients; Dosimeters; Heat radiation; Ionizing radiation; Monitoring; MOSFET devices; Nanoelectronics; Nuclear reactors; Threshold voltage; Transistor transistor logic circuits; Dosimetry |
| Año: | 2010
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| Página de inicio: | 71
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| Página de fin: | 75
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| Título revista: | 4th Argentine School of Micro-Nanoelectronics, Technology and Applications and 1st Uruguay School of Micro-Nanoelectronics, Technology and Applications, EAMTA 2010
|
| Título revista abreviado: | Proc. Argent.-Uruguay Sch. Micro-Nanoelectronics, Technol. Appl., EAMTA
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| Registro: | https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_97898716_v_n_p71_Carbonetto |
Referencias:
- Holmes-Siedle Andrew, Adams Leonard, RADFET: A REVIEW OF THE USE OF METAL-OXIDE-SILICON DEVICES AS INTEGRATING DOSIMETERS. (1986) Radiation Physics and Chemistry, 28 (2), pp. 235-244
- Sarrabayrouse, G., Siskos, S., Radiation dose measurement using MOSFETs (1998) IEEE Instrumentation and Measurement Magazine, 1 (2), pp. 26-34
- Haran, A., Jaksic, A., Rafaeli, N., Eliyahu, A., David, D., Barak, J., Temperature effects and long term fading of implanted and unimplanted gate oxide RADFETS (2004) IEEE Transactions on Nuclear Science, 51 (5), pp. 2917-2921
- Sarrabayrouse, G., Siskos, S., Temperature effects and accuracy of MOS radiation dosimeters (2008) 7th WSEAS International Conference on Microelectronics, Nanoelectronics, Optoelectronics, pp. 26-30
- Soubra, M., Cygler, J., MacKay, G., Evaluation of a dual bias dual metal oxide-silicon semiconductor field effect transistor detector as radiation dosimeter (1994) Med. Phys., 21 (4), pp. 257-272
- Tarr, N.G., A floating gate mosfet dosimeter requiring no external bias supply (1998) IEEE Transactions on Nuclear Science, 45 (PART 3), pp. 1470-1474
- Tarr, N.G., Shortt, K., Wang, Y., Thomson, I., A sensitive, temperaturecompensated, zero bias, floating gate MOSFET dosimeter (2004) IEEE Transactions on Nuclear Science, 51 (3), pp. 1277-1282
- Lipovetzky, J., Redin, E.G., Garcíainza, M.A., Carbonetto, S.H., Faigón, A., Reducing measurements uncertainties using bias controlled cycled measurements in MOS dosimetry at different temperatures (2010) IEEE Transactions on Nuclear Science, 57 (2), pp. 848-853
- Ma, T.P., Dressendorfer, P.V., (1989) Ionizing Radiation Effects in MOS Devices and Circuits, , Ed. John Willey & Sons
- Oldham, T.R., McLean, F.B., Total ionizing dose effects in MOS oxides and devices (2003) IEEE Transactions on Nuclear Science, 50 (3), pp. 483-499
- Shaneyfelt, M.R., Schwank, J.R., Fleetwood, D.M., Winokur, P.S., Hughes, K.L., Sexton, F.W., Field dependence of interface-trap buildup in polysilicon and metal gate MOS devices (1990) IEEE Transactions on Nuclear Science, 37 (6), pp. 1632-1640
- Sze, S.M., (1981) Physics of Semiconductor Devices, , Ed. John Willey & Sons, 2nd Ed
- Filanovsky, I.M., Lim, S.T., Interaction of threshold voltage and mobility temperature dependencies applied to stabilization of current and voltage (2000) Midwest Symposium on Circuits and Systems, 3, pp. 1022-1025
- Rosenfeld, A.B., Electronic dosimetry in radiation therapy (2007) Radiation Measurements, 41, pp. 134-153
- Lipovetzky, J., Redin, E.G., Garcíainza, M.A., Carbonetto, S.H., Faigón, A., Temperature effects on Metal Oxide Semiconductor dosimeters during switched bias irradiation (2009) Proceeding of EAMTA 2009, pp. 41-45. , IEEE Catalog Number CFP0954EA4 - SSCS; CAS; MOSIS; IEEE; ANII
Citas:
---------- APA ----------
Carbonetto, S.H., Inza, M.A.G., Lipovetzky, J., Redin, E.G., Salomone, L.S., Kasulin, A. & Faigón, A.
(2010)
. Temperature error minimization in low dose radiation measurements with 140 nm MOS dosimeters. 4th Argentine School of Micro-Nanoelectronics, Technology and Applications and 1st Uruguay School of Micro-Nanoelectronics, Technology and Applications, EAMTA 2010, 71-75.
Recuperado de https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_97898716_v_n_p71_Carbonetto [ ]
---------- CHICAGO ----------
Carbonetto, S.H., Inza, M.A.G., Lipovetzky, J., Redin, E.G., Salomone, L.S., Kasulin, A., et al.
"Temperature error minimization in low dose radiation measurements with 140 nm MOS dosimeters"
. 4th Argentine School of Micro-Nanoelectronics, Technology and Applications and 1st Uruguay School of Micro-Nanoelectronics, Technology and Applications, EAMTA 2010
(2010) : 71-75.
Recuperado de https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_97898716_v_n_p71_Carbonetto [ ]
---------- MLA ----------
Carbonetto, S.H., Inza, M.A.G., Lipovetzky, J., Redin, E.G., Salomone, L.S., Kasulin, A., et al.
"Temperature error minimization in low dose radiation measurements with 140 nm MOS dosimeters"
. 4th Argentine School of Micro-Nanoelectronics, Technology and Applications and 1st Uruguay School of Micro-Nanoelectronics, Technology and Applications, EAMTA 2010, 2010, pp. 71-75.
Recuperado de https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_97898716_v_n_p71_Carbonetto [ ]
---------- VANCOUVER ----------
Carbonetto, S.H., Inza, M.A.G., Lipovetzky, J., Redin, E.G., Salomone, L.S., Kasulin, A., et al. Temperature error minimization in low dose radiation measurements with 140 nm MOS dosimeters. Proc. Argent.-Uruguay Sch. Micro-Nanoelectronics, Technol. Appl., EAMTA. 2010:71-75.
Available from: https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_97898716_v_n_p71_Carbonetto [ ]
