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Abstract:

We recently showed that a ring of two bistable oscillators is capable of storing a single bit of information via stochastic resonance. Memory performance was characterized in terms of the probability of erroneous bit detection and was shown to be minimized for a range of noise intensities. Furthermore, memory persistence was also shown to exhibit a stochastic-resonance behavior. In this paper we investigate the influence on memory performance, in particular its resilience to noise, on both noise bandwidth and the limited time response of the bistable elements. We show that, for broad ranges of ST and noise bandwidths, the probability of erroneous bit retrieval is also minimized for an optimal noise intensity, exhibiting a deep well as a function of noise intensity. We are interested in the breadth of such a well as it points out to the robustness of the memory device under different working conditions. Moreover, we show that there exists a relation between the noise and ST bandwidths that favors wide wells. We believe that this relation may be of relevance as a design rule for practical memory devices sustained by noise. © 2011 American Institute of Physics.

Registro:

Documento: Conferencia
Título:On the effect of noise and electronics bandwidth on a stochastic-resonance memory device
Autor:Fierens, P.I.; Patterson, G.A.; Bellomo, G.; Grosz, D.F.
Ciudad:Lake Louise, AB
Filiación:Instituto Tecnológico de Buenos Aires (ITBA), Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET), Argentina
Facultad de Ciencias Exactas y Naturales, Universidad de Buenos Aires (FCEN-UBA), Argentina
Palabras clave:Memory device; Stochastic resonance
Año:2011
Volumen:1339
Página de inicio:298
Página de fin:302
DOI: http://dx.doi.org/10.1063/1.3574866
Título revista:International Conference on Applications in Nonlinear Dynamics, ICAND 2010
Título revista abreviado:AIP Conf. Proc.
ISSN:0094243X
PDF:https://bibliotecadigital.exactas.uba.ar/download/paper/paper_0094243X_v1339_n_p298_Fierens.pdf
Registro:https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_0094243X_v1339_n_p298_Fierens

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Citas:

---------- APA ----------
Fierens, P.I., Patterson, G.A., Bellomo, G. & Grosz, D.F. (2011) . On the effect of noise and electronics bandwidth on a stochastic-resonance memory device. International Conference on Applications in Nonlinear Dynamics, ICAND 2010, 1339, 298-302.
http://dx.doi.org/10.1063/1.3574866
---------- CHICAGO ----------
Fierens, P.I., Patterson, G.A., Bellomo, G., Grosz, D.F. "On the effect of noise and electronics bandwidth on a stochastic-resonance memory device" . International Conference on Applications in Nonlinear Dynamics, ICAND 2010 1339 (2011) : 298-302.
http://dx.doi.org/10.1063/1.3574866
---------- MLA ----------
Fierens, P.I., Patterson, G.A., Bellomo, G., Grosz, D.F. "On the effect of noise and electronics bandwidth on a stochastic-resonance memory device" . International Conference on Applications in Nonlinear Dynamics, ICAND 2010, vol. 1339, 2011, pp. 298-302.
http://dx.doi.org/10.1063/1.3574866
---------- VANCOUVER ----------
Fierens, P.I., Patterson, G.A., Bellomo, G., Grosz, D.F. On the effect of noise and electronics bandwidth on a stochastic-resonance memory device. AIP Conf. Proc. 2011;1339:298-302.
http://dx.doi.org/10.1063/1.3574866