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2011
1352
IEEE Transactions on Nuclear Science
1
"Zero temperature coefficient bias in MOS devices. Dependence on interface traps density, application to MOS dosimetry" (2011) Carbonetto, S.H.;García Inza, M.A.;Lipovetzky, J. (...)Faigon, A. IEEE Transactions on Nuclear Science. 58(6 PART 2):3348-3353