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Inoue, I.H.; Rozenberg, M.J.; Yasuda, S.; Sánchezll, M.J.; Yamazaki, M.; Manageo, T.; Akinaga, H.; Takagi, H.; Akoh, H.; Tokura, Y. "Strong electron correlation effects in non-volatile electronic memory devices" (2005) 2005 Non-Volatile Memory Technology Symposium, NVMTS05:131-136
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Abstract:

We propose a theoretical domain-tunneling (DT) model of the resistance switching phenomenon that is often experimentally observed in metal-semiconductor-metal sandwich structures which is considered as a possible non-volatile memory devices. The DT model is incorporated with a metal-insulator transition due to strong electron correlations at the semiconductor/metal interface. We have also prepared experimentally a Pt/NiO/Pt test device and have observed the resistance switching. The calculated results of the DT model are compared to the experimental results, manifesting that this sandwich structure could be the realisation of a novel strongly correlated electron device. © 2005 IEEE.

Registro:

Documento: Conferencia
Título:Strong electron correlation effects in non-volatile electronic memory devices
Autor:Inoue, I.H.; Rozenberg, M.J.; Yasuda, S.; Sánchezll, M.J.; Yamazaki, M.; Manageo, T.; Akinaga, H.; Takagi, H.; Akoh, H.; Tokura, Y.
Ciudad:Dallas, TX
Filiación:Correlated Electron Research Center (CERC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8562, Japan
Research Consortium for Synthetic Nano-Function Materials Project (SYNAF), AIST, Tsukuba, Japan
Laboratoire de Physique des Solides, CNRS, Université Paris-Sud, France
Departamento de Física Juan José Giambiagi, FCEN, Universidad de Buenos Aires, Argentina
Department of Advanced Materials Science, University of Tokyo, Kashiwa, Japan
Centro Atómico Bariloche, Argentina
Nanotechnology Research Institute (NRI), AIST, Tsukuba, Japan
Department of Applied Physics, University of Tokyo, Tokyo, Japan
Palabras clave:Computational methods; Electric insulators; Electronic equipment; Interfaces (computer); Mathematical models; Sandwich structures; Semiconductor materials; Switching systems; Correlated electron devices; Domain-tunneling (DT); Non volatile memory devices; Semiconductor/metal interfaces; Data storage equipment
Año:2005
Página de inicio:131
Página de fin:136
DOI: http://dx.doi.org/10.1109/NVMT.2005.1541421
Título revista:2005 Non-Volatile Memory Technology Symposium, NVMTS05
Título revista abreviado:Non-Volatile Mem. Tech. Symp. NVMTS
Registro:https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_NIS03824_v_n_p131_Inoue

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Citas:

---------- APA ----------
Inoue, I.H., Rozenberg, M.J., Yasuda, S., Sánchezll, M.J., Yamazaki, M., Manageo, T., Akinaga, H.,..., Tokura, Y. (2005) . Strong electron correlation effects in non-volatile electronic memory devices. 2005 Non-Volatile Memory Technology Symposium, NVMTS05, 131-136.
http://dx.doi.org/10.1109/NVMT.2005.1541421
---------- CHICAGO ----------
Inoue, I.H., Rozenberg, M.J., Yasuda, S., Sánchezll, M.J., Yamazaki, M., Manageo, T., et al. "Strong electron correlation effects in non-volatile electronic memory devices" . 2005 Non-Volatile Memory Technology Symposium, NVMTS05 (2005) : 131-136.
http://dx.doi.org/10.1109/NVMT.2005.1541421
---------- MLA ----------
Inoue, I.H., Rozenberg, M.J., Yasuda, S., Sánchezll, M.J., Yamazaki, M., Manageo, T., et al. "Strong electron correlation effects in non-volatile electronic memory devices" . 2005 Non-Volatile Memory Technology Symposium, NVMTS05, 2005, pp. 131-136.
http://dx.doi.org/10.1109/NVMT.2005.1541421
---------- VANCOUVER ----------
Inoue, I.H., Rozenberg, M.J., Yasuda, S., Sánchezll, M.J., Yamazaki, M., Manageo, T., et al. Strong electron correlation effects in non-volatile electronic memory devices. Non-Volatile Mem. Tech. Symp. NVMTS. 2005:131-136.
http://dx.doi.org/10.1109/NVMT.2005.1541421