Abstract:
We present computer simulations of ion transport in electrochemical deposition (ECD) in thin-layer cells for highly diluted solutions and realistic cell geometry configurations, under gravitoconvection prevailing regimes. The computational model solves the Nernst-Planck equations for ion transport, the Poisson equation for the electrostatic potential and the Navier-Stokes equations for the fluid motion in a lattice with a length to width ratio of more than one order of magnitude. The equations are written in terms of a set of dimensionless numbers among which stands the Gravity Grashofnumberdescribing gravitoconvectionprevailing regimes. Due to the extreme disparity of the physical scales and geometry distortion of the electrochemical process, we introduced in the computational model ado main decomposition technique with a strongly implicit iterative method and its implementation on a parallel machine consisting in a cluster of PC's under MPI and Linux. This allows the utilization of very fine grids in highly distorted domains with more realistic Gravity Grash of numbers, and results in a robust algorithm for highly diluted solutions close to those found in experiments. The computer simulations predict full front interaction, vortex generation and merging and a space-time fronts evolution with a correct time scaling.
Registro:
| Documento: |
Conferencia
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| Título: | Ion transport modeling of realistic thin-layer cell configurations |
| Autor: | Marshall, G.; Dengra, S.; Arias, E.; Molina, F.V.; Gonzalez, G.; Vallieres, M. |
| Ciudad: | Washington, DC |
| Filiación: | Departamento de Computación, FCEN, Univetsidad de Buenos Aires, Argentina
INQUIMAE, FCEN, Universidad de Buenos Aires, Argentina
Drexel University, Department of Physics, Philadelphia, PA, United States
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| Palabras clave: | Charge transfer; Computer simulation; Decomposition; Electric potential; Ions; Solutions; Cell configurations; Electrostatic potential; Geometry distortion; Ion transport; Electrodeposition |
| Año: | 2001
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| Volumen: | 8
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| Página de inicio: | 388
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| Página de fin: | 399
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| Título revista: | Morphological Evolution of Electrodeposits-and-Electrochemical, Processing in ULSI Fabrication, and Electrodepositin of and on Semiconductors IV
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| Título revista abreviado: | Proc. Electrochem. Soc.
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| Registro: | https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_NIS01900_v8_n_p388_Marshall |
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Citas:
---------- APA ----------
Marshall, G., Dengra, S., Arias, E., Molina, F.V., Gonzalez, G. & Vallieres, M.
(2001)
. Ion transport modeling of realistic thin-layer cell configurations. Morphological Evolution of Electrodeposits-and-Electrochemical, Processing in ULSI Fabrication, and Electrodepositin of and on Semiconductors IV, 8, 388-399.
Recuperado de https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_NIS01900_v8_n_p388_Marshall [ ]
---------- CHICAGO ----------
Marshall, G., Dengra, S., Arias, E., Molina, F.V., Gonzalez, G., Vallieres, M.
"Ion transport modeling of realistic thin-layer cell configurations"
. Morphological Evolution of Electrodeposits-and-Electrochemical, Processing in ULSI Fabrication, and Electrodepositin of and on Semiconductors IV 8
(2001) : 388-399.
Recuperado de https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_NIS01900_v8_n_p388_Marshall [ ]
---------- MLA ----------
Marshall, G., Dengra, S., Arias, E., Molina, F.V., Gonzalez, G., Vallieres, M.
"Ion transport modeling of realistic thin-layer cell configurations"
. Morphological Evolution of Electrodeposits-and-Electrochemical, Processing in ULSI Fabrication, and Electrodepositin of and on Semiconductors IV, vol. 8, 2001, pp. 388-399.
Recuperado de https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_NIS01900_v8_n_p388_Marshall [ ]
---------- VANCOUVER ----------
Marshall, G., Dengra, S., Arias, E., Molina, F.V., Gonzalez, G., Vallieres, M. Ion transport modeling of realistic thin-layer cell configurations. Proc. Electrochem. Soc. 2001;8:388-399.
Available from: https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_NIS01900_v8_n_p388_Marshall [ ]
