Conferencia

Monsalve, L.N.; Medrano, A.V.; Golmar, F.; Trupp, L.; Parise, A.R.; Bruttomesso, A.; Gessner T. "Performance of solution processed tröger Base Bis(triarylamine) derivative as channel for field effect transistors" (2016) Smart Systems Integration 2016 - 10th International Conference and Exhibition on Integration Issues of Miniaturized Systems, SSI 2016:435-438
Estamos trabajando para incorporar este artículo al repositorio

Abstract:

A bis(triarylamine) compound was used as channel for a field effect transistor. The compound was drop-casted onto surface modified gold source and drain electrodes. Low voltage operation and extreme stability was found for these devices, retaining modulation properties for more than 6 months in air without encapsulation.

Registro:

Documento: Conferencia
Título:Performance of solution processed tröger Base Bis(triarylamine) derivative as channel for field effect transistors
Autor:Monsalve, L.N.; Medrano, A.V.; Golmar, F.; Trupp, L.; Parise, A.R.; Bruttomesso, A.; Gessner T.
Filiación:INTI-CONICET, Av. Gral Paz 5445 (B1650WAB), San-Martín, Argentina
INTI, Av. Gral Paz 5445 (B1650WAB), San-Martín, Argentina
Departamento de Química Orgánica, FCEN-UBA, Pabellón II, Ciudad Universitaria (1428), Buenos Aires, Argentina
Departamento de Química, FCEN-UNMDP, Funes 3350 (7600), Mar del Plata, Argentina
Palabras clave:Integration; Gold source; Low voltage operation; Modulation properties; Solution-processed; Surface-modified; Triarylamines; Field effect transistors
Año:2016
Página de inicio:435
Página de fin:438
Título revista:Smart Systems Integration 2016 - 10th International Conference and Exhibition on Integration Issues of Miniaturized Systems, SSI 2016
Título revista abreviado:Smart Syst. Integr. - Int. Conf. Exhib. Integr. Issues of Miniaturized Syst., SSI
Registro:https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_97839573_v_n_p435_Monsalve

Referencias:

  • Rúnarsson, O.V., Artacho, J., Wärnmark, K., (2012) Eur. J. Org. Chem., 36, pp. 7015-7041
  • Song, Y., Di, C.-A., Xu, W., Liu, Y., Zhang, D., Zhu, D., (2007) J. Mater. Chem., 17, pp. 4483-4491
  • Sonntag, M., Kreger, K., Hanft, D., Strohriegl, P., (2005) Chem. Mater, 17, pp. 3031-3039
  • Ramírez, C.L., Pegoraro, C., Trupp, L., Bruttomesso, A., Amorebieta, V., Vera, D.M.A., Parise, A.R., (2011) Phys. Chem. Chem. Phys., 13, pp. 20076-20080A4 -

Citas:

---------- APA ----------
Monsalve, L.N., Medrano, A.V., Golmar, F., Trupp, L., Parise, A.R., Bruttomesso, A. & Gessner T. (2016) . Performance of solution processed tröger Base Bis(triarylamine) derivative as channel for field effect transistors. Smart Systems Integration 2016 - 10th International Conference and Exhibition on Integration Issues of Miniaturized Systems, SSI 2016, 435-438.
Recuperado de https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_97839573_v_n_p435_Monsalve [ ]
---------- CHICAGO ----------
Monsalve, L.N., Medrano, A.V., Golmar, F., Trupp, L., Parise, A.R., Bruttomesso, A., et al. "Performance of solution processed tröger Base Bis(triarylamine) derivative as channel for field effect transistors" . Smart Systems Integration 2016 - 10th International Conference and Exhibition on Integration Issues of Miniaturized Systems, SSI 2016 (2016) : 435-438.
Recuperado de https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_97839573_v_n_p435_Monsalve [ ]
---------- MLA ----------
Monsalve, L.N., Medrano, A.V., Golmar, F., Trupp, L., Parise, A.R., Bruttomesso, A., et al. "Performance of solution processed tröger Base Bis(triarylamine) derivative as channel for field effect transistors" . Smart Systems Integration 2016 - 10th International Conference and Exhibition on Integration Issues of Miniaturized Systems, SSI 2016, 2016, pp. 435-438.
Recuperado de https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_97839573_v_n_p435_Monsalve [ ]
---------- VANCOUVER ----------
Monsalve, L.N., Medrano, A.V., Golmar, F., Trupp, L., Parise, A.R., Bruttomesso, A., et al. Performance of solution processed tröger Base Bis(triarylamine) derivative as channel for field effect transistors. Smart Syst. Integr. - Int. Conf. Exhib. Integr. Issues of Miniaturized Syst., SSI. 2016:435-438.
Available from: https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_97839573_v_n_p435_Monsalve [ ]