Abstract:
A bis(triarylamine) compound was used as channel for a field effect transistor. The compound was drop-casted onto surface modified gold source and drain electrodes. Low voltage operation and extreme stability was found for these devices, retaining modulation properties for more than 6 months in air without encapsulation.
Registro:
Documento: |
Conferencia
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Título: | Performance of solution processed tröger Base Bis(triarylamine) derivative as channel for field effect transistors |
Autor: | Monsalve, L.N.; Medrano, A.V.; Golmar, F.; Trupp, L.; Parise, A.R.; Bruttomesso, A.; Gessner T. |
Filiación: | INTI-CONICET, Av. Gral Paz 5445 (B1650WAB), San-Martín, Argentina INTI, Av. Gral Paz 5445 (B1650WAB), San-Martín, Argentina Departamento de Química Orgánica, FCEN-UBA, Pabellón II, Ciudad Universitaria (1428), Buenos Aires, Argentina Departamento de Química, FCEN-UNMDP, Funes 3350 (7600), Mar del Plata, Argentina
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Palabras clave: | Integration; Gold source; Low voltage operation; Modulation properties; Solution-processed; Surface-modified; Triarylamines; Field effect transistors |
Año: | 2016
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Página de inicio: | 435
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Página de fin: | 438
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Título revista: | Smart Systems Integration 2016 - 10th International Conference and Exhibition on Integration Issues of Miniaturized Systems, SSI 2016
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Título revista abreviado: | Smart Syst. Integr. - Int. Conf. Exhib. Integr. Issues of Miniaturized Syst., SSI
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Registro: | https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_97839573_v_n_p435_Monsalve |
Referencias:
- Rúnarsson, O.V., Artacho, J., Wärnmark, K., (2012) Eur. J. Org. Chem., 36, pp. 7015-7041
- Song, Y., Di, C.-A., Xu, W., Liu, Y., Zhang, D., Zhu, D., (2007) J. Mater. Chem., 17, pp. 4483-4491
- Sonntag, M., Kreger, K., Hanft, D., Strohriegl, P., (2005) Chem. Mater, 17, pp. 3031-3039
- Ramírez, C.L., Pegoraro, C., Trupp, L., Bruttomesso, A., Amorebieta, V., Vera, D.M.A., Parise, A.R., (2011) Phys. Chem. Chem. Phys., 13, pp. 20076-20080A4 -
Citas:
---------- APA ----------
Monsalve, L.N., Medrano, A.V., Golmar, F., Trupp, L., Parise, A.R., Bruttomesso, A. & Gessner T.
(2016)
. Performance of solution processed tröger Base Bis(triarylamine) derivative as channel for field effect transistors. Smart Systems Integration 2016 - 10th International Conference and Exhibition on Integration Issues of Miniaturized Systems, SSI 2016, 435-438.
Recuperado de https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_97839573_v_n_p435_Monsalve [ ]
---------- CHICAGO ----------
Monsalve, L.N., Medrano, A.V., Golmar, F., Trupp, L., Parise, A.R., Bruttomesso, A., et al.
"Performance of solution processed tröger Base Bis(triarylamine) derivative as channel for field effect transistors"
. Smart Systems Integration 2016 - 10th International Conference and Exhibition on Integration Issues of Miniaturized Systems, SSI 2016
(2016) : 435-438.
Recuperado de https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_97839573_v_n_p435_Monsalve [ ]
---------- MLA ----------
Monsalve, L.N., Medrano, A.V., Golmar, F., Trupp, L., Parise, A.R., Bruttomesso, A., et al.
"Performance of solution processed tröger Base Bis(triarylamine) derivative as channel for field effect transistors"
. Smart Systems Integration 2016 - 10th International Conference and Exhibition on Integration Issues of Miniaturized Systems, SSI 2016, 2016, pp. 435-438.
Recuperado de https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_97839573_v_n_p435_Monsalve [ ]
---------- VANCOUVER ----------
Monsalve, L.N., Medrano, A.V., Golmar, F., Trupp, L., Parise, A.R., Bruttomesso, A., et al. Performance of solution processed tröger Base Bis(triarylamine) derivative as channel for field effect transistors. Smart Syst. Integr. - Int. Conf. Exhib. Integr. Issues of Miniaturized Syst., SSI. 2016:435-438.
Available from: https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_97839573_v_n_p435_Monsalve [ ]