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Abstract:

The spin-relaxation time for electrons in the impurity band of semiconductors with wurtzite crystal structure is determined. The effective Dresselhaus spin-orbit interaction Hamiltonian is taken as the source of the spin relaxation at low temperature and for doping densities corresponding to the metallic side of the metal-insulator transition. The spin-flip hopping matrix elements between impurity states are calculated and used to set up a tight-binding Hamiltonian that incorporates the symmetries of wurtzite semiconductors. The spin-relaxation time is obtained from a semiclassical model of spin diffusion, as well as from a microscopic self-consistent diagrammatic theory of spin and charge diffusion in doped semiconductors. Estimates are provided for particularly important materials. The theoretical spin-relaxation times compare favorably with the corresponding low-temperature measurements in GaN and ZnO. For InN and AlN we predict that tuning of the spin-orbit coupling constant induced by an external potential leads to a potentially dramatic increase of the spin-relaxation time related to the mechanism under study. © 2017 American Physical Society.

Registro:

Documento: Artículo
Título:Spin-relaxation time in the impurity band of wurtzite semiconductors
Autor:Tamborenea, P.I.; Wellens, T.; Weinmann, D.; Jalabert, R.A.
Filiación:Departamento de Física and IFIBA, FCEN, Universidad de Buenos Aires, Ciudad Universitaria, Pab. I, Ciudad de Buenos Aires, C1428EHA, Argentina
Physikalisches Institut der Albert-Ludwigs-Universität, Hermann-Herder-Strasse 3, Freiburg, D-79104, Germany
Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg, UMR 7504, Strasbourg, F-67000, France
Año:2017
Volumen:96
Número:12
DOI: http://dx.doi.org/10.1103/PhysRevB.96.125205
Título revista:Physical Review B
Título revista abreviado:Phys. Rev. B
ISSN:24699950
Registro:https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_24699950_v96_n12_p_Tamborenea

Referencias:

  • Hanada, T., (2009) Oxide and Nitride Semiconductors: Processing, Properties, and Applications, pp. 1-19. , edited by T. Yao and S.-K. Hong (Springer, Berlin)
  • Dietl, T., Ohno, H., Matsukura, F., Cibert, J., Ferrand, D., (2000) Science, 287, p. 1019
  • Pearton, S.J., Abernathy, C.R., Overberg, M.E., Thaler, G.T., Norton, D.P., Theodoropoulou, N., Hebard, A.F., Boatner, L.A., (2003) J. Appl. Phys., 93, p. 1
  • Özgür, U., Alivov, Y.I., Liu, C., Teke, A., Reshchikov, M.A., Doan, S., Avrutin, V., Morkoç, H., (2005) J. Appl. Phys., 98, p. 041301
  • Janotti, A., De Walle, C.G.V., (2009) Rep. Prog. Phys., 72, p. 126501
  • Krishnamurthy, S., Van Schilfgaarde, M., Newman, N., (2003) Appl. Phys. Lett., 83, p. 1761
  • Soumyanarayanan, A., Reyren, N., Fert, A., Panagopoulos, C., (2016) Nature (London), 539, p. 509
  • Awschalom, D.D., Bassett, L.C., Dzurak, A.S., Hu, E.L., Petta, J.R., (2013) Science, 339, p. 1174
  • Bader, S., Parkin, S., (2010) Annu. Rev. Condens. Matter Phys., 1, p. 71
  • Fabian, J., Matos-Abiague, A., Ertler, C., Stano, P., Žutić, I., (2007) Acta Phys. Slovaca, 57, p. 565
  • Awschalom, D., Loss, D., Samarth, N., (2002) Semiconductor Spintronics and Quantum Computation, , (eds.), in (Springer, Berlin)
  • Žutić, I., Fabian, J., Das Sarma, S., (2004) Rev. Mod. Phys., 76, p. 323
  • Kikkawa, J.M., Awschalom, D.D., (1998) Phys. Rev. Lett., 80, p. 4313
  • Dzhioev, R.I., Kavokin, K.V., Korenev, V.L., Lazarev, M.V., Meltser, B.Y., Stepanova, M.N., Zakharchenya, B.P., Katzer, D.S., (2002) Phys. Rev. B, 66, p. 245204
  • Oestreich, M., Römer, M., Haug, R.J., Hägele, D., (2005) Phys. Rev. Lett., 95, p. 216603
  • Wu, M., Jiang, J., Weng, M., (2010) Phys. Rep., 493, p. 61
  • Tamborenea, P.I., Weinmann, D., Jalabert, R.A., (2007) Phys. Rev. B, 76, p. 085209
  • Matsubara, T., Toyozawa, Y., (1961) Prog. Theor. Phys., 26, p. 739
  • Intronati, G.A., Tamborenea, P.I., Weinmann, D., Jalabert, R.A., (2012) Phys. Rev. Lett., 108, p. 016601
  • Wellens, T., Jalabert, R.A., (2016) Phys. Rev. B, 94, p. 144209
  • Beschoten, B., Johnston-Halperin, E., Young, D.K., Poggio, M., Grimaldi, J.E., Keller, S., DenBaars, S.P., Awschalom, D.D., (2001) Phys. Rev. B, 63, p. 121202
  • Wolos, A., Wilamowski, Z., Piersa, M., Strupinski, W., Lucznik, B., Grzegory, I., Porowski, S., (2011) Phys. Rev. B, 83, p. 165206
  • Buß, J.H., Rudolph, J., Natali, F., Semond, F., Hägele, D., (2010) Phys. Rev. B, 81, p. 155216
  • Buß, J.H., Rudolph, J., Starosielec, S., Schaefer, A., Semond, F., Cordier, Y., Wieck, A.D., Hagele, D., (2011) Phys. Rev. B, 84, p. 153202
  • Ghosh, S., Sih, V., Lau, W.H., Awschalom, D.D., Bae, S.-Y., Wang, S., Vaidya, S., Chapline, G., (2005) Appl. Phys. Lett., 86, p. 232507
  • Prestgard, M.C., Siegel, G., Roundy, R., Raikh, M., Tiwari, A., (2015) J. Appl. Phys., 117, p. 083905
  • Ghosh, S., Steuerman, D.W., Maertz, B., Ohtani, K., Xu, H., Ohno, H., Awschalom, D.D., (2008) Appl. Phys. Lett., 92, p. 162109
  • Ganichev, S.D., Golub, L.E., (2014) Phys. Status Solidi B, 251, p. 1801
  • Harmon, N.J., Putikka, W.O., Joynt, R., (2011) Appl. Phys. Lett., 98, p. 073108
  • Harmon, N.J., Putikka, W.O., Joynt, R., (2009) Phys. Rev. B, 79, p. 115204
  • Wang, W.-T., Wu, C.L., Chiang, J.C., Lo, I., Kao, H.F., Hsu, Y.C., Pang, W.Y., Chen, C.-N., (2010) J. Appl. Phys., 108, p. 083718
  • Kang, N.L., (2015) Phys. Scr., 90, p. 035805
  • Buß, J.H., Rudolph, J., Natali, F., Semond, F., Hägele, D., (2009) Appl. Phys. Lett., 95, p. 192107
  • Cartoixà, X., Ting, D.Z.-Y., Chang, Y.-C., (2005) Phys. Rev. B, 71, p. 045313
  • Lü, C., Cheng, J.L., (2009) Semicond. Sci. Technol., 24, p. 115010
  • Fu, J.Y., Wu, M.W., (2008) J. Appl. Phys., 104, p. 093712
  • Wang, W.-T., Wu, C.L., Tsay, S.F., Gau, M.H., Lo, I., Kao, H.F., Jang, D.J., Hsueh, H.C., (2007) Appl. Phys. Lett., 91, p. 082110
  • Xu, Y.-N., Ching, W.Y., (1993) Phys. Rev. B, 48, p. 4335
  • De, A., Pryor, C.E., (2010) Phys. Rev. B, 81, p. 155210
  • Koguchi, M., Kakibayashi, H., Yazawa, M., Hiruma, K., Katsuyama, T., (1992) Jpn. J. Appl. Phys., 31, p. 2061
  • Intronati, G.A., Tamborenea, P.I., Weinmann, D., Jalabert, R.A., (2013) Phys. Rev. B, 88, p. 045303
  • Intronati, G.A., (2013) Ph.D. Thesis, , Universidad de Buenos Aires
  • Nozières, P., Lewiner, C., (1973) J. Phys. (Paris), 34, p. 901
  • Engel, H.-A., Rashba, E.I., Halperin, B.I., (2007) Handbook of Magnetism and Advanced Magnetic Materials, , in (John Wiley and Sons, New York)
  • Lew Yan Voon, L.C., Willatzen, M., Cardona, M., Christensen, N.E., (1996) Phys. Rev. B, 53, p. 10703
  • Meier, L., Salis, G., Shorubalko, I., Gini, E., Schon, S., Ensslin, K., (2007) Nat. Phys., 3, p. 650
  • Stefanowicz, W., Adhikari, R., Andrearczyk, T., Faina, B., Sawicki, M., Majewski, J.A., Dietl, T., Bonanni, A., (2014) Phys. Rev. B, 89, p. 205201
  • Persson, C., Ferreira da Silva, A., Ahuja, R., Johansson, B., (2001) J. Cryst. Growth, 231, p. 397
  • Proceedings of the International Specialist Meeting on Bulk Nitrides and Related Techniques
  • Ferreira da Silva, A., Moysés Araújo, C., Sernelius, B.E., Persson, C., Ahuja, R., Johansson, B., (2001) J. Phys.: Condens. Matter, 13, p. 8891
  • Rodina, A.V., Dietrich, M., Göldner, A., Eckey, L., Hoffmann, A., Efros, A.L., Rosen, M., Meyer, B.K., (2001) Phys. Rev. B, 64, p. 115204
  • Majlis, N., Anda, E., (1983) Solid State Commun., 45, p. 561
  • Figueira, M., Makler, S., Anda, E., (1984) J. Phys. C, 17, p. 623
  • Roberts, P.H., Ursell, H.D., (1960) Philos. Trans. R. Soc. London Sect. A, 252, p. 317
  • Vollhardt, D., Wölfle, P., (1980) Phys. Rev. B, 22, p. 4666
  • Vollhardt, D., Wölfle, P., (1992) Electronic Phase Transitions, p. 1. , edited by W. Hanke and Y. V. Kopaev (North-Holland, Amsterdam)
  • Kroha, J., Kopp, T., Wölfle, P., (1990) Phys. Rev. B, 41, p. 888
  • Elyutin, P., (1981) J. Phys. C, 14, p. 1435
  • Ferreira da Silva, A., Persson, C., (2002) J. Appl. Phys., 92, p. 2550
  • Yin, C., Shen, B., Zhang, Q., Xu, F., Tang, N., Cen, L., Wang, X., Yu, J., (2010) Appl. Phys. Lett., 97, p. 181904
  • Andrearczyk, T., Jaroszyński, J., Grabecki, G., Dietl, T., Fukumura, T., Kawasaki, M., (2005) Phys. Rev. B, 72, p. 121309
  • Majewski, J.A., (2005) Acta Phys. Pol. A, 108, p. 777
  • Majewski, J.A., Vogl, P., (2005) Physics of Semiconductors: 27th International Conference on the Physics of Semiconductors, p. 1403. , edited by J. Menéndez and C. G. Van de Walle (American Institute of Physics, New York)
  • Scherübl, Z., Fülöp, G., Madsen, M.H., Nygård, J., Csonka, S., (2016) Phys. Rev. B, 94, p. 035444
  • Liang, D., Gao, X.P., (2012) Nano Lett., 12, p. 3263
  • Wolos, A., Wilamowski, Z., Skierbiszewski, C., Drabinska, A., Lucznik, B., Grzegory, I., Porowski, S., (2011) Physica B (Amsterdam), 406, p. 2548

Citas:

---------- APA ----------
Tamborenea, P.I., Wellens, T., Weinmann, D. & Jalabert, R.A. (2017) . Spin-relaxation time in the impurity band of wurtzite semiconductors. Physical Review B, 96(12).
http://dx.doi.org/10.1103/PhysRevB.96.125205
---------- CHICAGO ----------
Tamborenea, P.I., Wellens, T., Weinmann, D., Jalabert, R.A. "Spin-relaxation time in the impurity band of wurtzite semiconductors" . Physical Review B 96, no. 12 (2017).
http://dx.doi.org/10.1103/PhysRevB.96.125205
---------- MLA ----------
Tamborenea, P.I., Wellens, T., Weinmann, D., Jalabert, R.A. "Spin-relaxation time in the impurity band of wurtzite semiconductors" . Physical Review B, vol. 96, no. 12, 2017.
http://dx.doi.org/10.1103/PhysRevB.96.125205
---------- VANCOUVER ----------
Tamborenea, P.I., Wellens, T., Weinmann, D., Jalabert, R.A. Spin-relaxation time in the impurity band of wurtzite semiconductors. Phys. Rev. B. 2017;96(12).
http://dx.doi.org/10.1103/PhysRevB.96.125205