Abstract:
The spin-relaxation time for electrons in the impurity band of semiconductors with wurtzite crystal structure is determined. The effective Dresselhaus spin-orbit interaction Hamiltonian is taken as the source of the spin relaxation at low temperature and for doping densities corresponding to the metallic side of the metal-insulator transition. The spin-flip hopping matrix elements between impurity states are calculated and used to set up a tight-binding Hamiltonian that incorporates the symmetries of wurtzite semiconductors. The spin-relaxation time is obtained from a semiclassical model of spin diffusion, as well as from a microscopic self-consistent diagrammatic theory of spin and charge diffusion in doped semiconductors. Estimates are provided for particularly important materials. The theoretical spin-relaxation times compare favorably with the corresponding low-temperature measurements in GaN and ZnO. For InN and AlN we predict that tuning of the spin-orbit coupling constant induced by an external potential leads to a potentially dramatic increase of the spin-relaxation time related to the mechanism under study. © 2017 American Physical Society.
Registro:
Documento: |
Artículo
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Título: | Spin-relaxation time in the impurity band of wurtzite semiconductors |
Autor: | Tamborenea, P.I.; Wellens, T.; Weinmann, D.; Jalabert, R.A. |
Filiación: | Departamento de Física and IFIBA, FCEN, Universidad de Buenos Aires, Ciudad Universitaria, Pab. I, Ciudad de Buenos Aires, C1428EHA, Argentina Physikalisches Institut der Albert-Ludwigs-Universität, Hermann-Herder-Strasse 3, Freiburg, D-79104, Germany Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg, UMR 7504, Strasbourg, F-67000, France
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Año: | 2017
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Volumen: | 96
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Número: | 12
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DOI: |
http://dx.doi.org/10.1103/PhysRevB.96.125205 |
Título revista: | Physical Review B
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Título revista abreviado: | Phys. Rev. B
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ISSN: | 24699950
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Registro: | https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_24699950_v96_n12_p_Tamborenea |
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Citas:
---------- APA ----------
Tamborenea, P.I., Wellens, T., Weinmann, D. & Jalabert, R.A.
(2017)
. Spin-relaxation time in the impurity band of wurtzite semiconductors. Physical Review B, 96(12).
http://dx.doi.org/10.1103/PhysRevB.96.125205---------- CHICAGO ----------
Tamborenea, P.I., Wellens, T., Weinmann, D., Jalabert, R.A.
"Spin-relaxation time in the impurity band of wurtzite semiconductors"
. Physical Review B 96, no. 12
(2017).
http://dx.doi.org/10.1103/PhysRevB.96.125205---------- MLA ----------
Tamborenea, P.I., Wellens, T., Weinmann, D., Jalabert, R.A.
"Spin-relaxation time in the impurity band of wurtzite semiconductors"
. Physical Review B, vol. 96, no. 12, 2017.
http://dx.doi.org/10.1103/PhysRevB.96.125205---------- VANCOUVER ----------
Tamborenea, P.I., Wellens, T., Weinmann, D., Jalabert, R.A. Spin-relaxation time in the impurity band of wurtzite semiconductors. Phys. Rev. B. 2017;96(12).
http://dx.doi.org/10.1103/PhysRevB.96.125205