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Lee, H.-S.; Han, W.; Chung, H.-Y.; Rozenberg, M.; Kim, K.; Lee, Z.; Yeom, G.Y.; Park, H.-H. "Ferroelectric Tunnel Junction for Dense Cross-Point Arrays" (2015) ACS Applied Materials and Interfaces. 7(40):22348-22354
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Abstract:

Cross-point array (CPA) structure memories using a memristor are attracting a great deal of attention due to their high density integration with a 4F2 cell. However, a common significant drawback of the CPA configuration is crosstalk between cells. To date, the CPA structure using a redox-based memristor has restrictions to minimize the operating current level due to their resistive switching mechanism. This study demonstrates suitable characteristics of a ferroelectric tunnel junction (FTJ) for the memristor of the CPA structure using an electrostatic model. From the FTJ of the Au/p-type Pr0.98Ca0.02MnO3 (4 nm)/ BaTiO3 (4.3 nm)/n-type Ca0.98Pr0.02MnO3 (3 nm)/ Pt(111) structure, which has a higher and thicker potential barrier, a good memristive effect for the CPA structure with a high nonlinear current-voltage curve and low current operation, was obtained by Δ Fowler-Nordheim tunneling with effectively blocked direct tunneling and thermionic emission. The FTJ demonstrated reduced sneak current and the possible for high nonlinearity. © 2015 American Chemical Society.

Registro:

Documento: Artículo
Título:Ferroelectric Tunnel Junction for Dense Cross-Point Arrays
Autor:Lee, H.-S.; Han, W.; Chung, H.-Y.; Rozenberg, M.; Kim, K.; Lee, Z.; Yeom, G.Y.; Park, H.-H.
Filiación:Department of Materials Science and Engineering, Yonsei University, Seodaemun-Ku, Seoul, 120-749, South Korea
Laboratoire de Physique des Solides, CNRS-UMR 8502, Université Paris-Sud, Orsay, 91405, France
IFIBA-Conicet, Departamento de Física, FCEN, Universidad de Buenos Aires, Ciudad Universitaria Pabellón i, Buenos Aires, 1428, Argentina
School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 689-798, South Korea
Department of Advanced Materials Science and Engineering, SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon, Kyunggi-do, 440-746, South Korea
Palabras clave:cross point array structure; ferroelectric tunnel junction; memristor; perovskite manganite family; sneak current; Barium compounds; Calcium; Ferroelectricity; Flash memory; Manganese oxide; Memristors; Passive filters; Thermionic emission; Cross-point array; Ferroelectric tunnel junctions; Memristor; Perovskite manganites; Sneak currents; Tunnel junctions
Año:2015
Volumen:7
Número:40
Página de inicio:22348
Página de fin:22354
DOI: http://dx.doi.org/10.1021/acsami.5b06117
Título revista:ACS Applied Materials and Interfaces
Título revista abreviado:ACS Appl. Mater. Interfaces
ISSN:19448244
Registro:https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_19448244_v7_n40_p22348_Lee

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Citas:

---------- APA ----------
Lee, H.-S., Han, W., Chung, H.-Y., Rozenberg, M., Kim, K., Lee, Z., Yeom, G.Y.,..., Park, H.-H. (2015) . Ferroelectric Tunnel Junction for Dense Cross-Point Arrays. ACS Applied Materials and Interfaces, 7(40), 22348-22354.
http://dx.doi.org/10.1021/acsami.5b06117
---------- CHICAGO ----------
Lee, H.-S., Han, W., Chung, H.-Y., Rozenberg, M., Kim, K., Lee, Z., et al. "Ferroelectric Tunnel Junction for Dense Cross-Point Arrays" . ACS Applied Materials and Interfaces 7, no. 40 (2015) : 22348-22354.
http://dx.doi.org/10.1021/acsami.5b06117
---------- MLA ----------
Lee, H.-S., Han, W., Chung, H.-Y., Rozenberg, M., Kim, K., Lee, Z., et al. "Ferroelectric Tunnel Junction for Dense Cross-Point Arrays" . ACS Applied Materials and Interfaces, vol. 7, no. 40, 2015, pp. 22348-22354.
http://dx.doi.org/10.1021/acsami.5b06117
---------- VANCOUVER ----------
Lee, H.-S., Han, W., Chung, H.-Y., Rozenberg, M., Kim, K., Lee, Z., et al. Ferroelectric Tunnel Junction for Dense Cross-Point Arrays. ACS Appl. Mater. Interfaces. 2015;7(40):22348-22354.
http://dx.doi.org/10.1021/acsami.5b06117