Abstract:
We report the imprinting of nanometer-scale gratings by interferometric lithography at λ = 46.9 nm using an Ne-like Ar capillary discharge laser. Gratings with periods as small as 55 nm were imprinted on poly-methyl methacrylate using a Lloyd's mirror interferometer. This first demonstration of nanopatterning using an extreme ultraviolet (EUV) laser illustrates the potential of compact EUV lasers in nanotechnology applications. © 2006 IEEE.
Registro:
Documento: |
Artículo
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Título: | Nanopatterning with interferometric lithography using a compact λ = 46.9-nm laser |
Autor: | Capeluto, M.G.; Vaschenko, G.; Grisham, M.; Marconi, M.C.; Ludueña, S.; Pietrasanta, L.; Lu, Y.; Parkinson, B.; Menoni, C.S.; Rocca, J.J. |
Filiación: | IEEE, Argentina Departamento de Física, Universidad de Buenos Aires, C1428EHA Buenos Aires, Argentina National Science Foundation ERC for Extreme Ultraviolet Science and Technology, Department of Electrical and Computer Engineering, Colorado State University, Fort Collins, CO 80521, United States National Science Foundation ERC for Extreme Ultraviolet Science and Technology, United States Electrical and Computer Engineering, Colorado State University, Fort Collins, CO 80521, United States Facultad de Ciencias Exactas, Centro de Microscopias Avanzadas, Universidad de Buenos Aires, C1428EHA Buenos Aires, Argentina Department of Chemistry, Colorado State University, Fort Collins, CO 80521, United States National Science Foundation (NSF), Engineering Research Center for EUV Science and Technology, Colorado State University, Fort Collins, United States Electrical and Computer Engineering Department, Colorado State University, Fort Collins, United States National Science Foundation (NSF), Engineering Research Center for EUV Science and Technology, Colorado State University, United States Optical Society of America (OSA), United States Argentinean Physical Society Department of Electrical and Computer Engineering, Colorado State University, Fort Collins, United States American Physical Society, Optical Society of America (OPS), United States
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Palabras clave: | Nanotechnology; Photolithography; X-ray lasers; X-ray lithography; EUV lasers; X-ray lasers; X-ray lithography; Interferometry; Lasers; Nanotechnology; Pattern recognition; Polymethyl methacrylates; Ultraviolet radiation; Photolithography |
Año: | 2006
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Volumen: | 5
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Número: | 1
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Página de inicio: | 3
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Página de fin: | 6
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DOI: |
http://dx.doi.org/10.1109/TNANO.2005.858599 |
Título revista: | IEEE Transactions on Nanotechnology
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Título revista abreviado: | IEEE Trans. Nanotechnol.
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ISSN: | 1536125X
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Registro: | https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_1536125X_v5_n1_p3_Capeluto |
Referencias:
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Citas:
---------- APA ----------
Capeluto, M.G., Vaschenko, G., Grisham, M., Marconi, M.C., Ludueña, S., Pietrasanta, L., Lu, Y.,..., Rocca, J.J.
(2006)
. Nanopatterning with interferometric lithography using a compact λ = 46.9-nm laser. IEEE Transactions on Nanotechnology, 5(1), 3-6.
http://dx.doi.org/10.1109/TNANO.2005.858599---------- CHICAGO ----------
Capeluto, M.G., Vaschenko, G., Grisham, M., Marconi, M.C., Ludueña, S., Pietrasanta, L., et al.
"Nanopatterning with interferometric lithography using a compact λ = 46.9-nm laser"
. IEEE Transactions on Nanotechnology 5, no. 1
(2006) : 3-6.
http://dx.doi.org/10.1109/TNANO.2005.858599---------- MLA ----------
Capeluto, M.G., Vaschenko, G., Grisham, M., Marconi, M.C., Ludueña, S., Pietrasanta, L., et al.
"Nanopatterning with interferometric lithography using a compact λ = 46.9-nm laser"
. IEEE Transactions on Nanotechnology, vol. 5, no. 1, 2006, pp. 3-6.
http://dx.doi.org/10.1109/TNANO.2005.858599---------- VANCOUVER ----------
Capeluto, M.G., Vaschenko, G., Grisham, M., Marconi, M.C., Ludueña, S., Pietrasanta, L., et al. Nanopatterning with interferometric lithography using a compact λ = 46.9-nm laser. IEEE Trans. Nanotechnol. 2006;5(1):3-6.
http://dx.doi.org/10.1109/TNANO.2005.858599