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Abstract:

We have studied long time relaxation effects on the nonvolatile resistance state produced by resistive switching in devices composed by ceramic YBa 2Cu 3O 7-δ and La 0.7Sr 0.3MnO 3/metal (Au, Pt, Ag) interfaces. The time relaxation can be described by a stretched exponential law that is characterized by a power exponent (n) close to 1/2. We found that the characteristic time (τ) increases with increasing temperature and applied power. The origin of the relaxation effect can be related to oxygen diffusion processes, which were recently associated with the mechanism of bipolar switching in complex oxide interfaces. We argue that the anomalous behavior can be understood in terms of diffusion of oxygen ions (or oxygen vacancies) on a two-dimensional surface with a temperature-dependent density of trapping centers, which may correspond, physically, to the diffusion along grain boundaries. © 2012 American Physical Society.

Registro:

Documento: Artículo
Título:Anomalous time relaxation of the nonvolatile resistive state in bipolar resistive-switching oxide-based memories
Autor:Schulman, A.; Rozenberg, M.J.; Acha, C.
Filiación:Departamento de Física, Facultad de Ciencias Exactas y Naturales, Ciudad Universitaria, C1428EHA Buenos Aires, Argentina
Laboratoire de Physique des Solides, UMR8502 Université Paris-Sud, Orsay 91405, France
Año:2012
Volumen:86
Número:10
DOI: http://dx.doi.org/10.1103/PhysRevB.86.104426
Título revista:Physical Review B - Condensed Matter and Materials Physics
Título revista abreviado:Phys. Rev. B Condens. Matter Mater. Phys.
ISSN:10980121
CODEN:PRBMD
Registro:https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_10980121_v86_n10_p_Schulman

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Citas:

---------- APA ----------
Schulman, A., Rozenberg, M.J. & Acha, C. (2012) . Anomalous time relaxation of the nonvolatile resistive state in bipolar resistive-switching oxide-based memories. Physical Review B - Condensed Matter and Materials Physics, 86(10).
http://dx.doi.org/10.1103/PhysRevB.86.104426
---------- CHICAGO ----------
Schulman, A., Rozenberg, M.J., Acha, C. "Anomalous time relaxation of the nonvolatile resistive state in bipolar resistive-switching oxide-based memories" . Physical Review B - Condensed Matter and Materials Physics 86, no. 10 (2012).
http://dx.doi.org/10.1103/PhysRevB.86.104426
---------- MLA ----------
Schulman, A., Rozenberg, M.J., Acha, C. "Anomalous time relaxation of the nonvolatile resistive state in bipolar resistive-switching oxide-based memories" . Physical Review B - Condensed Matter and Materials Physics, vol. 86, no. 10, 2012.
http://dx.doi.org/10.1103/PhysRevB.86.104426
---------- VANCOUVER ----------
Schulman, A., Rozenberg, M.J., Acha, C. Anomalous time relaxation of the nonvolatile resistive state in bipolar resistive-switching oxide-based memories. Phys. Rev. B Condens. Matter Mater. Phys. 2012;86(10).
http://dx.doi.org/10.1103/PhysRevB.86.104426