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Heidrich-Meisner, F.; González, I.; Al-Hassanieh, K.A.; Feiguin, A.E.; Rozenberg, M.J.; Dagotto, E. "Nonequilibrium electronic transport in a one-dimensional Mott insulator" (2010) Physical Review B - Condensed Matter and Materials Physics. 82(20)
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Abstract:

We calculate the nonequilibrium electronic transport properties of a one-dimensional interacting chain at half filling, coupled to noninteracting leads. The interacting chain is initially in a Mott insulator state that is driven out of equilibrium by applying a strong bias voltage between the leads. For bias voltages above a certain threshold we observe the breakdown of the Mott insulator state and the establishment of a steady-state electronic current through the system. Based on extensive time-dependent density-matrix renormalization-group simulations, we show that this steady-state current always has the same functional dependence on voltage, independent of the microscopic details of the model and we relate the value of the threshold to the Lieb-Wu gap. We frame our results in terms of the Landau-Zener dielectric breakdown picture. Finally, we also discuss the real-time evolution of the current, and characterize the current-carrying state resulting from the breakdown of the Mott insulator by computing the double occupancy, the spin structure factor, and the entanglement entropy. © 2010 The American Physical Society.

Registro:

Documento: Artículo
Título:Nonequilibrium electronic transport in a one-dimensional Mott insulator
Autor:Heidrich-Meisner, F.; González, I.; Al-Hassanieh, K.A.; Feiguin, A.E.; Rozenberg, M.J.; Dagotto, E.
Filiación:Physics Department, Arnold Sommerfeld Center for Theoretical Physics, Ludwig-Maximilians-Universität München, D-80333 München, Germany
Centro de Supercomputación de Galicia, Avenida de Vigo s/n, E-15705 Santiago de Compostela, Spain
Theoretical Division, Los Alamos National Laboratory, Los Alamos, NM 87545, United States
Department of Physics and Astronomy, University of Wyoming, Laramie, WY 82071, United States
Laboratoire de Physique des Solides, CNRS-UMR 8502, Universite de Paris-Sud, Orsay 91405, France
Departamento de Física, FCEN, Ciudad Universitaria Pabellón i, Buenos Aires 1428, Argentina
Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, United States
Department of Physics, University of Tennessee, Knoxville, TN 37996, United States
Año:2010
Volumen:82
Número:20
DOI: http://dx.doi.org/10.1103/PhysRevB.82.205110
Título revista:Physical Review B - Condensed Matter and Materials Physics
Título revista abreviado:Phys. Rev. B Condens. Matter Mater. Phys.
ISSN:10980121
CODEN:PRBMD
Registro:https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_10980121_v82_n20_p_HeidrichMeisner

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Citas:

---------- APA ----------
Heidrich-Meisner, F., González, I., Al-Hassanieh, K.A., Feiguin, A.E., Rozenberg, M.J. & Dagotto, E. (2010) . Nonequilibrium electronic transport in a one-dimensional Mott insulator. Physical Review B - Condensed Matter and Materials Physics, 82(20).
http://dx.doi.org/10.1103/PhysRevB.82.205110
---------- CHICAGO ----------
Heidrich-Meisner, F., González, I., Al-Hassanieh, K.A., Feiguin, A.E., Rozenberg, M.J., Dagotto, E. "Nonequilibrium electronic transport in a one-dimensional Mott insulator" . Physical Review B - Condensed Matter and Materials Physics 82, no. 20 (2010).
http://dx.doi.org/10.1103/PhysRevB.82.205110
---------- MLA ----------
Heidrich-Meisner, F., González, I., Al-Hassanieh, K.A., Feiguin, A.E., Rozenberg, M.J., Dagotto, E. "Nonequilibrium electronic transport in a one-dimensional Mott insulator" . Physical Review B - Condensed Matter and Materials Physics, vol. 82, no. 20, 2010.
http://dx.doi.org/10.1103/PhysRevB.82.205110
---------- VANCOUVER ----------
Heidrich-Meisner, F., González, I., Al-Hassanieh, K.A., Feiguin, A.E., Rozenberg, M.J., Dagotto, E. Nonequilibrium electronic transport in a one-dimensional Mott insulator. Phys. Rev. B Condens. Matter Mater. Phys. 2010;82(20).
http://dx.doi.org/10.1103/PhysRevB.82.205110