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Abstract:

We propose a mechanism to describe spin relaxation in n -doped III-V semiconductors close to the Mott metal-insulator transition. Taking into account the spin-orbit interaction induced spin admixture in the hydrogenic donor states, we build a tight-binding model for the spin-dependent impurity band. Since the hopping amplitudes with spin flip are considerably smaller than the spin-conserving counterparts, the resulting spin lifetime is very large. We estimate the spin lifetime from the diffusive accumulation of spin rotations associated with the electron hopping. Our result is larger but of the same order of magnitude than the experimental value. Therefore, the proposed mechanism has to be included when describing spin relaxation in the impurity band. © 2007 The American Physical Society.

Registro:

Documento: Artículo
Título:Relaxation mechanism for electron spin in the impurity band of n -doped semiconductors
Autor:Tamborenea, P.I.; Weinmann, D.; Jalabert, R.A.
Filiación:Departamento de Física, FCEN, Pabellón I, C1428EHA Ciudad de Buenos Aires, Argentina
Institut de Physique et Chimie des Matériaux de Strasbourg, UMR 7504 (CNRS-ULP), 23 Rue du Loess, 67034 Strasbourg Cedex 2, France
Año:2007
Volumen:76
Número:8
DOI: http://dx.doi.org/10.1103/PhysRevB.76.085209
Título revista:Physical Review B - Condensed Matter and Materials Physics
Título revista abreviado:Phys. Rev. B Condens. Matter Mater. Phys.
ISSN:10980121
CODEN:PRBMD
Registro:https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_10980121_v76_n8_p_Tamborenea

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Citas:

---------- APA ----------
Tamborenea, P.I., Weinmann, D. & Jalabert, R.A. (2007) . Relaxation mechanism for electron spin in the impurity band of n -doped semiconductors. Physical Review B - Condensed Matter and Materials Physics, 76(8).
http://dx.doi.org/10.1103/PhysRevB.76.085209
---------- CHICAGO ----------
Tamborenea, P.I., Weinmann, D., Jalabert, R.A. "Relaxation mechanism for electron spin in the impurity band of n -doped semiconductors" . Physical Review B - Condensed Matter and Materials Physics 76, no. 8 (2007).
http://dx.doi.org/10.1103/PhysRevB.76.085209
---------- MLA ----------
Tamborenea, P.I., Weinmann, D., Jalabert, R.A. "Relaxation mechanism for electron spin in the impurity band of n -doped semiconductors" . Physical Review B - Condensed Matter and Materials Physics, vol. 76, no. 8, 2007.
http://dx.doi.org/10.1103/PhysRevB.76.085209
---------- VANCOUVER ----------
Tamborenea, P.I., Weinmann, D., Jalabert, R.A. Relaxation mechanism for electron spin in the impurity band of n -doped semiconductors. Phys. Rev. B Condens. Matter Mater. Phys. 2007;76(8).
http://dx.doi.org/10.1103/PhysRevB.76.085209