Artículo
Tamborenea, P.I.; Kuroda, M.A.; Bottesi, F.L. "Spin relaxation in n-doped GaAs due to impurity and electron-electron Elliot-Yafet scattering" (2003) Physical Review B - Condensed Matter and Materials Physics. 68(24)
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Abstract:
We calculate the spin-relaxation time of conduction electrons in n-doped bulk GaAs. We consider the Elliot-Yafet spin-relaxation mechanism, driven by Coulombic-impurity and electron-electron scattering. We find that these two scattering mechanisms result in relaxation times of equal order of magnitude, but with dissimilar dependences on doping density and temperature. Our theoretical results are compared with experimentally measured spin-relaxation times in gallium arsenide. © 2003 The American Physical Society.
Registro:
| Documento: | Artículo |
| Título: | Spin relaxation in n-doped GaAs due to impurity and electron-electron Elliot-Yafet scattering |
| Autor: | Tamborenea, P.I.; Kuroda, M.A.; Bottesi, F.L. |
| Filiación: | Department of Physics “J. J. Giambiagi,”, University of Buenos Aires, Ciudad Universitaria, Pab. I, Buenos Aires, C1428EHA, Argentina Department of Physics and Astronomy, Clippinger Research Laboratories, Ohio University, Athens, OH, 45701-2979, United States |
| Palabras clave: | gallium arsenide; silicon; article; computer; crystal; density; electron; magnetic field; mathematical model; quantum theory; semiconductor; temperature dependence |
| Año: | 2003 |
| Volumen: | 68 |
| Número: | 24 |
| DOI: | http://dx.doi.org/10.1103/PhysRevB.68.245205 |
| Título revista: | Physical Review B - Condensed Matter and Materials Physics |
| Título revista abreviado: | Phys. Rev. B Condens. Matter Mater. Phys. |
| ISSN: | 10980121 |
| CAS: | gallium arsenide, 1303-00-0; silicon, 7440-21-3 |
| Registro: | https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_10980121_v68_n24_p_Tamborenea |
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Citas:
---------- APA ----------
Tamborenea, P.I., Kuroda, M.A. & Bottesi, F.L. (2003) . Spin relaxation in n-doped GaAs due to impurity and electron-electron Elliot-Yafet scattering. Physical Review B - Condensed Matter and Materials Physics, 68(24).http://dx.doi.org/10.1103/PhysRevB.68.245205
---------- CHICAGO ----------
Tamborenea, P.I., Kuroda, M.A., Bottesi, F.L. "Spin relaxation in n-doped GaAs due to impurity and electron-electron Elliot-Yafet scattering" . Physical Review B - Condensed Matter and Materials Physics 68, no. 24 (2003).http://dx.doi.org/10.1103/PhysRevB.68.245205
---------- MLA ----------
Tamborenea, P.I., Kuroda, M.A., Bottesi, F.L. "Spin relaxation in n-doped GaAs due to impurity and electron-electron Elliot-Yafet scattering" . Physical Review B - Condensed Matter and Materials Physics, vol. 68, no. 24, 2003.http://dx.doi.org/10.1103/PhysRevB.68.245205
---------- VANCOUVER ----------
Tamborenea, P.I., Kuroda, M.A., Bottesi, F.L. Spin relaxation in n-doped GaAs due to impurity and electron-electron Elliot-Yafet scattering. Phys. Rev. B Condens. Matter Mater. Phys. 2003;68(24).http://dx.doi.org/10.1103/PhysRevB.68.245205
