Artículo
Aguirre, M.; Cánepa, H.; Heredia, E.; Walsöe de Reca, N.E. "Defects in Implanted Hg1-xCdxTe: Electrical and structural characterization" (1998) Defect and Diffusion Forum. 162-163:21-26
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Abstract:
The influence of the ion implantation damage on the electrical properties of Hg1-xCdxTe (MCT) has been studied MCT (110) layers grown at PRINSO by ISOVPE (Isothermal Vapor Phase Epitaxy) method were implanted with Ar++, Au+, Pb+ and Bi+ ions. Hall and RBS measurements were employed to evaluate the electrical properties and structural damage respectively.
Registro:
| Documento: | Artículo |
| Título: | Defects in Implanted Hg1-xCdxTe: Electrical and structural characterization |
| Autor: | Aguirre, M.; Cánepa, H.; Heredia, E.; Walsöe de Reca, N.E. |
| Filiación: | PRINSO, CONICET-CITEFA, Zufriategui 4380, Villa Martelli, 1603 Buenos Aires, Argentina Dpto de Física, Facultad de Ciencias Exactas, Universidad de Buenos Aires, Buenos Aires, Argentina |
| Palabras clave: | Channeling; Hall effect; Hg1-xCdxTe; Ion implantation; Radiation defects; Rutherford backscattering spectroscopy |
| Año: | 1998 |
| Volumen: | 162-163 |
| Página de inicio: | 21 |
| Página de fin: | 26 |
| Título revista: | Defect and Diffusion Forum |
| Título revista abreviado: | Defect Diffus. Forum |
| ISSN: | 10120386 |
| CODEN: | DDAFE |
| Registro: | https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_10120386_v162-163_n_p21_Aguirre |
Referencias:
- Destéfanis, G.L., (1988) J.Crystal Growth, 86, p. 700
- Becla, P., Wolff, P.A., Aggarwal, R.L., Yuen, S.Y., Galazka, R.R., (1985) J. Vac. Sci. Technol. A, 3 (1), p. 119
- Chu, W.K., Mayer, J., Nicolet, M., (1987) Backscattering Spectrometry, , Academic Press Inc
- Petritz, R.L., (1958) Phys. Rev., 110 (6), p. 1254
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- Feldman, L., Mayer, J., Picraux, S., (1982) Materials Analysis by Ion Channeling, , Chapt. 5, Academic Press Inc
- Aguirre, M.H., Cánepa, H.R., Walsöe de Reca, N.E., (1997) Defect and Diffusion Forum, 152, p. 33
- Aguirre, M.H., Cánepa, H.R., Heredia, E., (1998) Proceedings of the XIV Simposio Latinoamericano De Física Del Estado Sólido (Oaxaca-México), , To be published in Revista Mexicana de Física
Citas:
---------- APA ----------
Aguirre, M., Cánepa, H., Heredia, E. & Walsöe de Reca, N.E. (1998) . Defects in Implanted Hg1-xCdxTe: Electrical and structural characterization. Defect and Diffusion Forum, 162-163, 21-26.Recuperado de https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_10120386_v162-163_n_p21_Aguirre [ ]
---------- CHICAGO ----------
Aguirre, M., Cánepa, H., Heredia, E., Walsöe de Reca, N.E. "Defects in Implanted Hg1-xCdxTe: Electrical and structural characterization" . Defect and Diffusion Forum 162-163 (1998) : 21-26.Recuperado de https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_10120386_v162-163_n_p21_Aguirre [ ]
---------- MLA ----------
Aguirre, M., Cánepa, H., Heredia, E., Walsöe de Reca, N.E. "Defects in Implanted Hg1-xCdxTe: Electrical and structural characterization" . Defect and Diffusion Forum, vol. 162-163, 1998, pp. 21-26.Recuperado de https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_10120386_v162-163_n_p21_Aguirre [ ]
---------- VANCOUVER ----------
Aguirre, M., Cánepa, H., Heredia, E., Walsöe de Reca, N.E. Defects in Implanted Hg1-xCdxTe: Electrical and structural characterization. Defect Diffus. Forum. 1998;162-163:21-26.Available from: https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_10120386_v162-163_n_p21_Aguirre [ ]
