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Abstract:

Radiation induced defects are studied in Hg1-xCdxTe (MCT) ISOVPE grown epitaxial film after the implantation with Ar++ (300 keV). The influence of ion-radiation damage on the electrical properties of MCT has been also investigated. A comparison of the defects profiles is performed after the irradiation of MCT with different concentrations (x = 0.1 and 0.2 ) and different crystallines orientations: (111), (110) and (100). Results are discussed pointing out that stacking faults are probable near projected range (Rp) depth while interstitials seem to be more probable at deeper distances than Rp.

Registro:

Documento: Artículo
Título:Radiation defects studies on Ar-lmplanted Hg1-xCdxTe
Autor:Aguirre, M.H.; Cánepa, H.R.; De Walsöe Reca, N.E.
Filiación:PRINSO, CONICET-CITEFA, Zufriategui 4380, Villa Martelli 1603, Pcia de Buenos Aires, Argentina
Dpto. de Fisica, Facultad de Ciencias Exactas, Universidad de Buenos Aires, Buenos Aires, Argentina
Palabras clave:Infrared Detectors; Ion Implantation; Radiation Defects; Rutherford Backscattering Spectroscopy and Channeling
Año:1997
Volumen:152
Página de inicio:33
Página de fin:40
Título revista:Defect and Diffusion Forum
Título revista abreviado:Defect Diffus. Forum
ISSN:10120386
CODEN:DDAFE
Registro:https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_10120386_v152_n_p33_Aguirre

Referencias:

  • Irvine, S., Mullin, J., (1981) J. Crystal Growth, 55, p. 107
  • Destéfanis, G.L., (1988) J. Crystal Growth, 86, p. 700
  • Willardson, R., Beer, A., (1981) W.F.H. Micklethwaite in Semiconductors and Semimetals, 18. , Academic Press, Chapter 3
  • Gilabert, U., Serravalle, O., Heredia, E., Cánepa, H., Trigubó, A., De Walsöe Reca, N.E., (1995) Anales de la Asociación Quimica Argentina, 83, p. 65
  • Chu, W., Mayer, J., Nicolet, M., (1978) Backscattering Spectrometry, , Academic Press, Inc Chapters
  • Quéré, Y., (1974) J. Nucl Mater, 53 (262)
  • (1976) Radiat Eff, 28, p. 253
  • Picraux, S., Rimini, E., Foti, G., Campisano, S., (1978) Phys Rev., B, 18, p. 2078
  • Ziegler, J.F., (1992) Handbook of Ion Implantation Technology, , Elsevier Science Publishers B. V. North-Holland
  • Feldman, L., Rodgers, J., (1970) J Appl Phys, 41, p. 3776
  • Feldman, L., Mayer, J., Picraux, S., (1982) Materials Analysis by Ion Channeling, , Academic Press, NY, Chapter 4
  • Quéré, Y., (1968) Phys Status Solidi, 30, p. 713
  • Mory, J., Quéré, Y., (1972) Radiat Eff., 13, p. 57

Citas:

---------- APA ----------
Aguirre, M.H., Cánepa, H.R. & De Walsöe Reca, N.E. (1997) . Radiation defects studies on Ar-lmplanted Hg1-xCdxTe. Defect and Diffusion Forum, 152, 33-40.
Recuperado de https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_10120386_v152_n_p33_Aguirre [ ]
---------- CHICAGO ----------
Aguirre, M.H., Cánepa, H.R., De Walsöe Reca, N.E. "Radiation defects studies on Ar-lmplanted Hg1-xCdxTe" . Defect and Diffusion Forum 152 (1997) : 33-40.
Recuperado de https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_10120386_v152_n_p33_Aguirre [ ]
---------- MLA ----------
Aguirre, M.H., Cánepa, H.R., De Walsöe Reca, N.E. "Radiation defects studies on Ar-lmplanted Hg1-xCdxTe" . Defect and Diffusion Forum, vol. 152, 1997, pp. 33-40.
Recuperado de https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_10120386_v152_n_p33_Aguirre [ ]
---------- VANCOUVER ----------
Aguirre, M.H., Cánepa, H.R., De Walsöe Reca, N.E. Radiation defects studies on Ar-lmplanted Hg1-xCdxTe. Defect Diffus. Forum. 1997;152:33-40.
Available from: https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_10120386_v152_n_p33_Aguirre [ ]