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Abstract:

We study numerically the effects of an extrinsic spin-orbit interaction on the model of electrons in n-doped semiconductors of Matsubara and Toyozawa (MT). We focus on the analysis of the density of states (DOS) and the inverse participation ratio (IPR) of the spin-orbit perturbed states in the MT set of energy eigenstates in order to characterize the eigenstates with respect to their extended or localized nature. The finite sizes that we are able to consider necessitate an enhancement of the spin-orbit coupling strength in order to obtain a meaningful perturbation. The IPR and DOS are then studied as a function of the enhancement parameter. © 2012 Elsevier B.V.

Registro:

Documento: Artículo
Título:Influence of the spin-orbit interaction in the impurity-band states of n-doped semiconductors
Autor:Intronati, G.A.; Tamborenea, P.I.; Weinmann, D.; Jalabert, R.A.
Filiación:Depto. de Física and IFIBA, FCEN, Ciudad Universitaria, C1428EHA Buenos Aires, Argentina
IPCMS, UMR 7504, CNRS-UdS, 23 rue du Loess, 67034 Strasbourg Cedex 2, France
Service de Physique de LÉtat Condensé, CNRS URA 2464, CEA Saclay, 91191 Gif-sur-Yvette, France
Palabras clave:Impurity band; Metal-insulator transition; Semiconductors; Spin relaxation; Density of state; Eigenstates; Energy eigenstates; Finite size; Impurity bands; N-doped semiconductor; Participation ratios; Perturbed state; Spin orbit interactions; Spin orbits; Spin relaxation; Spin-orbit couplings; Semiconductor insulator boundaries; Semiconductor materials; Semiconductor doping
Año:2012
Volumen:407
Número:16
Página de inicio:3252
Página de fin:3255
DOI: http://dx.doi.org/10.1016/j.physb.2011.12.079
Título revista:Physica B: Condensed Matter
Título revista abreviado:Phys B Condens Matter
ISSN:09214526
CODEN:PHYBE
Registro:https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_09214526_v407_n16_p3252_Intronati

Referencias:

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Citas:

---------- APA ----------
Intronati, G.A., Tamborenea, P.I., Weinmann, D. & Jalabert, R.A. (2012) . Influence of the spin-orbit interaction in the impurity-band states of n-doped semiconductors. Physica B: Condensed Matter, 407(16), 3252-3255.
http://dx.doi.org/10.1016/j.physb.2011.12.079
---------- CHICAGO ----------
Intronati, G.A., Tamborenea, P.I., Weinmann, D., Jalabert, R.A. "Influence of the spin-orbit interaction in the impurity-band states of n-doped semiconductors" . Physica B: Condensed Matter 407, no. 16 (2012) : 3252-3255.
http://dx.doi.org/10.1016/j.physb.2011.12.079
---------- MLA ----------
Intronati, G.A., Tamborenea, P.I., Weinmann, D., Jalabert, R.A. "Influence of the spin-orbit interaction in the impurity-band states of n-doped semiconductors" . Physica B: Condensed Matter, vol. 407, no. 16, 2012, pp. 3252-3255.
http://dx.doi.org/10.1016/j.physb.2011.12.079
---------- VANCOUVER ----------
Intronati, G.A., Tamborenea, P.I., Weinmann, D., Jalabert, R.A. Influence of the spin-orbit interaction in the impurity-band states of n-doped semiconductors. Phys B Condens Matter. 2012;407(16):3252-3255.
http://dx.doi.org/10.1016/j.physb.2011.12.079