Artículo
Intronati, G.A.; Tamborenea, P.I.; Weinmann, D.; Jalabert, R.A. "Influence of the spin-orbit interaction in the impurity-band states of n-doped semiconductors" (2012) Physica B: Condensed Matter. 407(16):3252-3255
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Abstract:
We study numerically the effects of an extrinsic spin-orbit interaction on the model of electrons in n-doped semiconductors of Matsubara and Toyozawa (MT). We focus on the analysis of the density of states (DOS) and the inverse participation ratio (IPR) of the spin-orbit perturbed states in the MT set of energy eigenstates in order to characterize the eigenstates with respect to their extended or localized nature. The finite sizes that we are able to consider necessitate an enhancement of the spin-orbit coupling strength in order to obtain a meaningful perturbation. The IPR and DOS are then studied as a function of the enhancement parameter. © 2012 Elsevier B.V.
Registro:
| Documento: | Artículo |
| Título: | Influence of the spin-orbit interaction in the impurity-band states of n-doped semiconductors |
| Autor: | Intronati, G.A.; Tamborenea, P.I.; Weinmann, D.; Jalabert, R.A. |
| Filiación: | Depto. de Física and IFIBA, FCEN, Ciudad Universitaria, C1428EHA Buenos Aires, Argentina IPCMS, UMR 7504, CNRS-UdS, 23 rue du Loess, 67034 Strasbourg Cedex 2, France Service de Physique de LÉtat Condensé, CNRS URA 2464, CEA Saclay, 91191 Gif-sur-Yvette, France |
| Palabras clave: | Impurity band; Metal-insulator transition; Semiconductors; Spin relaxation; Density of state; Eigenstates; Energy eigenstates; Finite size; Impurity bands; N-doped semiconductor; Participation ratios; Perturbed state; Spin orbit interactions; Spin orbits; Spin relaxation; Spin-orbit couplings; Semiconductor insulator boundaries; Semiconductor materials; Semiconductor doping |
| Año: | 2012 |
| Volumen: | 407 |
| Número: | 16 |
| Página de inicio: | 3252 |
| Página de fin: | 3255 |
| DOI: | http://dx.doi.org/10.1016/j.physb.2011.12.079 |
| Título revista: | Physica B: Condensed Matter |
| Título revista abreviado: | Phys B Condens Matter |
| ISSN: | 09214526 |
| CODEN: | PHYBE |
| Registro: | https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_09214526_v407_n16_p3252_Intronati |
Referencias:
- Mott, N., (1987) Conduction in Non-crystalline Materials, , Oxford Science Publications, Clarendon Press Oxford
- Gebhard, F., (2010) The Mott Metal Insulator Transition: Models and Methods, , Springer Berlin
- Shklovskii, B.I., Efros, A.L., (1984) Electronic Properties of Doped Semiconductors, , Springer Verlag New York, Tokyo
- Economou, E.N., Fertis, A.C., (1985) Localization and Metal-Insulator Transitions, , H. Fritzsche, D. Adler, Plenum Press New York
- Matsubara, T., Toyozawa, Y., (1961) Prog. Theor. Phys., 26, p. 739
- Kramer, B., MacKinnon, A., (1993) Rep. Prog. Phys., 56, p. 1469
- Kramer, B., (2010) Int. J. Mod. Phys., 24, p. 1841
- Zarifis, V., Castner, T.G., (1987) Phys. Rev. B, 36, p. 6198
- Kikkawa, J.M., Awschalom, D.D., (1998) Phys. Rev. Lett., 80, p. 4313
- Dzhioev, R.I., (2002) Phys. Rev. B, 66, p. 245204
- Römer, M., (2010) Phys. Rev. B, 81, p. 075216
- Shklovskii, B.I., (2006) Phys. Rev. B, 73, p. 193201
- Kavokin, K.V., (2001) Phys. Rev. B, 64, p. 075305
- Putikka, W.O., Joynt, R., (2004) Phys. Rev. B, 70, p. 113201
- Tamborenea, P.I., Weinmann, D., Jalabert, R.A., (2007) Phys. Rev. B, 76, p. 085209
- Ando, T., (1989) Phys. Rev. B, 40, p. 5325
- Asada, Y., Slevin, K., Ohtsuki, T., (2002) Phys. Rev. Lett., 89, p. 256601
- Gaspard, J.-P., Cyrot-Lackmann, F., (1973) J. Phys. C, 6, p. 3077
- Thomas, G.A., (1981) Phys. Rev. B, 23, p. 5472
- Majlis, N., Anda, E., (1978) J. Phys. C: Solid State Phys., 11, p. 1607
- Ching, W.Y., Huber, D.L., (1982) Phys. Rev. B, 26, p. 5596
- Winkler, R., (2003) Spin-Orbit Coupling Effects in Two-dimensional Electron and Hole Systems, , Springer-Verlag Berlin
Citas:
---------- APA ----------
Intronati, G.A., Tamborenea, P.I., Weinmann, D. & Jalabert, R.A. (2012) . Influence of the spin-orbit interaction in the impurity-band states of n-doped semiconductors. Physica B: Condensed Matter, 407(16), 3252-3255.http://dx.doi.org/10.1016/j.physb.2011.12.079
---------- CHICAGO ----------
Intronati, G.A., Tamborenea, P.I., Weinmann, D., Jalabert, R.A. "Influence of the spin-orbit interaction in the impurity-band states of n-doped semiconductors" . Physica B: Condensed Matter 407, no. 16 (2012) : 3252-3255.http://dx.doi.org/10.1016/j.physb.2011.12.079
---------- MLA ----------
Intronati, G.A., Tamborenea, P.I., Weinmann, D., Jalabert, R.A. "Influence of the spin-orbit interaction in the impurity-band states of n-doped semiconductors" . Physica B: Condensed Matter, vol. 407, no. 16, 2012, pp. 3252-3255.http://dx.doi.org/10.1016/j.physb.2011.12.079
---------- VANCOUVER ----------
Intronati, G.A., Tamborenea, P.I., Weinmann, D., Jalabert, R.A. Influence of the spin-orbit interaction in the impurity-band states of n-doped semiconductors. Phys B Condens Matter. 2012;407(16):3252-3255.http://dx.doi.org/10.1016/j.physb.2011.12.079
