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Abstract:

In this contribution, we calculate the spin-dependent ballistic and coherent transport through epitaxial Fe/ZnSe (0 0 1) simple and double magnetic tunnel junctions with two different interface terminations: Zn-terminated and Se-terminated. The electronic structure of the junctions is modeled by a second-nearest neighbors spd tight-binding Hamiltonian parametrized to ab initio calculated band structures, while the conductances and the tunneling magnetoresistance are calculated within Landauer's formalism. The calculations are done at zero bias voltage and as a function of energy. We show and discuss the influence of the interface structure on the spin-dependent transport through simple and double tunnel junctions. © 2007 Elsevier B.V. All rights reserved.

Registro:

Documento: Artículo
Título:Tunneling magnetoresistance of Fe/ZnSe (0 0 1) single- and double-barrier junctions as a function of interface structure
Autor:Peralta-Ramos, J.; Llois, A.M.
Filiación:Departamento de Física, Centro Atómico Constituyentes, Comisión Nacional de Energía Atómica, Buenos Aires, Argentina
Departamento de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Buenos Aires, Buenos Aires, Argentina
Palabras clave:Double tunnel junctions; Fe/ZnSe; Interface structure; Tunneling magnetoresistance; Double tunnel junctions; Interface structure; Tight-binding Hamiltonian; Tunneling magnetoresistance; Band structure; Bias voltage; Electronic structure; Hamiltonians; Interfaces (materials); Magnetoresistance; Tunnel junctions
Año:2007
Volumen:398
Número:2
Página de inicio:393
Página de fin:396
DOI: http://dx.doi.org/10.1016/j.physb.2007.04.046
Título revista:Physica B: Condensed Matter
Título revista abreviado:Phys B Condens Matter
ISSN:09214526
CODEN:PHYBE
Registro:https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_09214526_v398_n2_p393_PeraltaRamos

Referencias:

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Citas:

---------- APA ----------
Peralta-Ramos, J. & Llois, A.M. (2007) . Tunneling magnetoresistance of Fe/ZnSe (0 0 1) single- and double-barrier junctions as a function of interface structure. Physica B: Condensed Matter, 398(2), 393-396.
http://dx.doi.org/10.1016/j.physb.2007.04.046
---------- CHICAGO ----------
Peralta-Ramos, J., Llois, A.M. "Tunneling magnetoresistance of Fe/ZnSe (0 0 1) single- and double-barrier junctions as a function of interface structure" . Physica B: Condensed Matter 398, no. 2 (2007) : 393-396.
http://dx.doi.org/10.1016/j.physb.2007.04.046
---------- MLA ----------
Peralta-Ramos, J., Llois, A.M. "Tunneling magnetoresistance of Fe/ZnSe (0 0 1) single- and double-barrier junctions as a function of interface structure" . Physica B: Condensed Matter, vol. 398, no. 2, 2007, pp. 393-396.
http://dx.doi.org/10.1016/j.physb.2007.04.046
---------- VANCOUVER ----------
Peralta-Ramos, J., Llois, A.M. Tunneling magnetoresistance of Fe/ZnSe (0 0 1) single- and double-barrier junctions as a function of interface structure. Phys B Condens Matter. 2007;398(2):393-396.
http://dx.doi.org/10.1016/j.physb.2007.04.046