Abstract:
I theoretically investigate the excitation of bulk semiconductors by twisted light below the energy bandgap. To this end, I modify a well-known model of light-semiconductor interaction to account for the conservation of the momentum of light. I predict that the optical excitation produces a superposition of exciton-like states that undergo a complex center-of-mass motion. In addition, I show that the energy at which the absorption occurs is slightly different from that of pure excitons, due to the center-of-mass kinetic energy of the new states. Finally, I provide expressions for the induced polarization and electric current, which exhibit complex spatial patterns that mimic the twisted-light electric field. Copyright © 2010 EPLA.
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Citas:
---------- APA ----------
(2010)
. Below-bandgap excitation of bulk semiconductors by twisted light. EPL, 91(2).
http://dx.doi.org/10.1209/0295-5075/91/27002---------- CHICAGO ----------
Quinteiro, G.F.
"Below-bandgap excitation of bulk semiconductors by twisted light"
. EPL 91, no. 2
(2010).
http://dx.doi.org/10.1209/0295-5075/91/27002---------- MLA ----------
Quinteiro, G.F.
"Below-bandgap excitation of bulk semiconductors by twisted light"
. EPL, vol. 91, no. 2, 2010.
http://dx.doi.org/10.1209/0295-5075/91/27002---------- VANCOUVER ----------
Quinteiro, G.F. Below-bandgap excitation of bulk semiconductors by twisted light. EPL. 2010;91(2).
http://dx.doi.org/10.1209/0295-5075/91/27002