Conferencia

Capeluto, M.G.; Vaschenko, G.; Grisham, M.E.; Marconi, M.C.; Menoni, C.S.; Rocca, J.J.; Ludueña, S.; Pietrasanta, L.; Marcano O. A.; Paz J.L. "Interferometric lithography at 46.9 nm" (2004) RIAO/OPTILAS 2004: 5th Iberoamerican Meeting on Optics, and 8th Latin American Meeting on Optics, Lasers, and their Applications; ICO Regional Meeting. 5622(PART 2):735-738
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Abstract:

We present the first results of nano-patterning in poly-methyl methacrylate (PMMA) photo-resist using a 46.9 nm tabletop extreme ultraviolet (EUV) laser. As a proof of principle, we recorded a Fresnel diffraction pattern of a copper mesh with 19 μm square holes. Results of ongoing interference experiments will also be presented.

Registro:

Documento: Conferencia
Título:Interferometric lithography at 46.9 nm
Autor:Capeluto, M.G.; Vaschenko, G.; Grisham, M.E.; Marconi, M.C.; Menoni, C.S.; Rocca, J.J.; Ludueña, S.; Pietrasanta, L.; Marcano O. A.; Paz J.L.
Ciudad:Porlamar
Filiación:Departamento de Fisica, Universidad de Buenos Aires, Argentina
Dept. of Elec. and Comp. Engineering, Colorado State University, United States
NSF Eng. Res. Ctr. Extreme U.S./T., Argentina
Centro de Microscopias Avanzadas, Universidad de Buenos Aires, Argentina
Palabras clave:EUV lithography; Interferometric lithography; Nanopatterning; Electromagnetic wave diffraction; Electrons; Interferometry; Laser applications; Polymethyl methacrylates; Ultraviolet radiation; EUV lithography; Interferometric lithography; Laser source; Nanopatterning; Lithography
Año:2004
Volumen:5622
Número:PART 2
Página de inicio:735
Página de fin:738
DOI: http://dx.doi.org/10.1117/12.592201
Título revista:RIAO/OPTILAS 2004: 5th Iberoamerican Meeting on Optics, and 8th Latin American Meeting on Optics, Lasers, and their Applications; ICO Regional Meeting
Título revista abreviado:Proc SPIE Int Soc Opt Eng
ISSN:0277786X
CODEN:PSISD
Registro:https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_0277786X_v5622_nPART2_p735_Capeluto

Referencias:

  • Bjorkholm, J.E., EUV lithography - The successor to optical lithography Intel Technology Journal QE'98
  • Solak, H.H., He, D., Li, W., Cerrina, F., Nanolithography using extreme ultraviolet lithography interferometry: 19 ran lines and spaces (1999) J. Vac. Sci. Technol. B, 17 (6), p. 3052
  • Solak, H.H., He, D., Li, W., Singh-Gasson, S., Cerrina, F., Sohn, B.H., Yang, X.M., Nealey, P., Exposure of 38 nm period grating patterns with extreme ultraviolet interferometric lithography (1999) Appl. Phys. Lett., 75, p. 2328
  • Macchietto, Benware, B.R., Rocca, J.J., Generation of millijoule-level soft-x-ray laser pulses at a 4-Hz repetition rate in a highly saturated tabletop capillary discharge amplifier (1999) Optics Letters, 24 (16), p. 1115
  • Liu, Y., Seminario, M., Tomasel, F.G., Chang, C., Rocca, J., Attwood, D.T., Achievement of essentially full spatial coherence in a high-average-power soft-x-ray laser (2001) Physical Review A., 63, p. 033802A4 - Instituto Venezolano de Investigaciones Cientificas; Universidad Simon Bolivar; Universidad Central de Venezuela; Ministerio de ciencia y Tecnologia; Fundacion Polar

Citas:

---------- APA ----------
Capeluto, M.G., Vaschenko, G., Grisham, M.E., Marconi, M.C., Menoni, C.S., Rocca, J.J., Ludueña, S.,..., Paz J.L. (2004) . Interferometric lithography at 46.9 nm. RIAO/OPTILAS 2004: 5th Iberoamerican Meeting on Optics, and 8th Latin American Meeting on Optics, Lasers, and their Applications; ICO Regional Meeting, 5622(PART 2), 735-738.
http://dx.doi.org/10.1117/12.592201
---------- CHICAGO ----------
Capeluto, M.G., Vaschenko, G., Grisham, M.E., Marconi, M.C., Menoni, C.S., Rocca, J.J., et al. "Interferometric lithography at 46.9 nm" . RIAO/OPTILAS 2004: 5th Iberoamerican Meeting on Optics, and 8th Latin American Meeting on Optics, Lasers, and their Applications; ICO Regional Meeting 5622, no. PART 2 (2004) : 735-738.
http://dx.doi.org/10.1117/12.592201
---------- MLA ----------
Capeluto, M.G., Vaschenko, G., Grisham, M.E., Marconi, M.C., Menoni, C.S., Rocca, J.J., et al. "Interferometric lithography at 46.9 nm" . RIAO/OPTILAS 2004: 5th Iberoamerican Meeting on Optics, and 8th Latin American Meeting on Optics, Lasers, and their Applications; ICO Regional Meeting, vol. 5622, no. PART 2, 2004, pp. 735-738.
http://dx.doi.org/10.1117/12.592201
---------- VANCOUVER ----------
Capeluto, M.G., Vaschenko, G., Grisham, M.E., Marconi, M.C., Menoni, C.S., Rocca, J.J., et al. Interferometric lithography at 46.9 nm. Proc SPIE Int Soc Opt Eng. 2004;5622(PART 2):735-738.
http://dx.doi.org/10.1117/12.592201