Manova, D.; Arias, L.F.; Hofele, A.; Alani, I.; Kleiman, A.; Asenova, I.; Decker, U.; Marquez, A.; Mändl, S."Nitrogen incorporation during PVD deposition of TiO2:N thin films" (2017) Surface and Coatings Technology. 312:61-65
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TiO2:N is known for its photoactivity upon illumination with visible light. Using filtered arc with energetic particle fluxes, deposition near room temperature on sensitive substrates, e.g. polymers should be possible. However, addition of nitrogen gas flux during deposition results in very small nitrogen contents. Incorporation of nitrogen up to 5–7.5 at.% for either cathodic arc deposition or plasma based ion implantation and deposition leads to a reduction of the band gap down to 2.7 eV before the films become semimetallic. However, only deposition at a temperature of 200 °C allows avoiding the early formation of defects within the band gap. The nitrogen content was determined using secondary ion mass spectroscopy (SIMS) and calibrated with nitrogen implanted TiO2 samples using conventional beamline implantation. The results show that the nitrogen/oxygen flow ratio in two completely different deposition systems is a reliable indicator of the physical properties. © 2016 Elsevier B.V.


Documento: Artículo
Título:Nitrogen incorporation during PVD deposition of TiO2:N thin films
Autor:Manova, D.; Arias, L.F.; Hofele, A.; Alani, I.; Kleiman, A.; Asenova, I.; Decker, U.; Marquez, A.; Mändl, S.
Filiación:Leibniz-Institut für Oberflächenmodifizierung, Permoserstr. 15, Leipzig, 04318, Germany
Instituto de Física del Plasma, CONICET and Departamento de Física, FCEN, Universidad de Buenos Aires, Cdad. Universitaria Pab. 1, Buenos Aires, 1428, Argentina
Faculty of Physics, Sofia University “St. Kliment Ohridski”, 5 James Bourchier Blvd, Sofia, 1164, Bulgaria
Palabras clave:Band gap engineering; PVD; Tauc plot; TiO2; Energy gap; Ion implantation; Nitrogen; Physical vapor deposition; Secondary ion mass spectrometry; Titanium dioxide; Band gap engineering; Cathodic arc deposition; Energetic particle flux; Nitrogen incorporation; Plasma based ion implantation and deposition; Secondary ion mass spectroscopies (SIMS); Tauc plots; TiO2; Nitrogen plasma
Página de inicio:61
Página de fin:65
Título revista:Surface and Coatings Technology
Título revista abreviado:Surf. Coat. Technol.


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---------- APA ----------
Manova, D., Arias, L.F., Hofele, A., Alani, I., Kleiman, A., Asenova, I., Decker, U.,..., Mändl, S. (2017) . Nitrogen incorporation during PVD deposition of TiO2:N thin films. Surface and Coatings Technology, 312, 61-65.
---------- CHICAGO ----------
Manova, D., Arias, L.F., Hofele, A., Alani, I., Kleiman, A., Asenova, I., et al. "Nitrogen incorporation during PVD deposition of TiO2:N thin films" . Surface and Coatings Technology 312 (2017) : 61-65.
---------- MLA ----------
Manova, D., Arias, L.F., Hofele, A., Alani, I., Kleiman, A., Asenova, I., et al. "Nitrogen incorporation during PVD deposition of TiO2:N thin films" . Surface and Coatings Technology, vol. 312, 2017, pp. 61-65.
---------- VANCOUVER ----------
Manova, D., Arias, L.F., Hofele, A., Alani, I., Kleiman, A., Asenova, I., et al. Nitrogen incorporation during PVD deposition of TiO2:N thin films. Surf. Coat. Technol. 2017;312:61-65.