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Abstract:

Selective functionalization of mesoporous silica thin films was achieved using a three step method. The first step consists in an outer surface functionalization, followed by washing off the structuring agent (second step), leaving the inner surface of the pores free to be functionalized in the third step. This reproducible method permits to anchor a volatile silane group in the outer film surface, and a second type of silane group in the inner surface of the pores. As a concept test we modified the outer surface of a mesoporous silica film with trimethylsilane (-Si-(CH3)3) groups and the inner pore surface with propylamino (-Si-(CH2)3-NH2) groups. The obtained silica films were characterized by Environmental Ellipsometric Porosimetry (EEP), EDS, XPS, contact angle and electron microscopy. The selectively functionalized silica (SF) shows an amount of surface amino functions 4.3 times lower than the one-step functionalized (OSF) silica samples. The method presented here can be extended to a combination of silane chlorides and alkoxides as functional groups, opening up a new route toward the synthesis of multifunctional mesoporous thin films with precisely localized organic functions. © 2015 Elsevier B.V. All rights reserved.

Registro:

Documento: Artículo
Título:A simple three step method for selective placement of organic groups in mesoporous silica thin films
Autor:Franceschini, E.A.; Llave, E.D.L.; Williams, F.J.; Soler-Illia, G.J.A.A.
Filiación:Gerencia Química, Centro Atómico Constituyentes, Comisión Nacional de Energía Atómica, Av. Gral Paz 1499, San-Martín-Buenos-Aires, B1650KNA, Argentina
Departamento de Quimica Inorganica, Analitica y Quimica Fisica, INQUIMAE-CONICET, Facultad de Ciencias Exactas y Naturales, Universidad de Buenos Aires, Ciudad Universitaria, Pabellón II, Buenos Aires, C1428EHA, Argentina
Instituto de Nanosistemas, Universidad Nacional de General San Martín, 25 de Mayo y Francia (1650), San-Martín-Buenos-Aires, Argentina
Palabras clave:Nanostructures; Sol-gel growth; Surface properties; Thin films; Vapor deposition; X-ray photo-emission spectroscopy (XPS); Deposition; Emission spectroscopy; Mesoporous materials; Nanostructures; Photoelectron spectroscopy; Silica; Sol-gels; Surface properties; Vapor deposition; X ray photoelectron spectroscopy; Ellipsometric porosimetry; Functionalized silica; Mesoporous silica film; Mesoporous silica thin films; Mesoporous thin films; Selective functionalization; Sol-gel growth; X ray photoemission spectroscopy; Thin films
Año:2016
Volumen:169
Página de inicio:82
Página de fin:88
DOI: http://dx.doi.org/10.1016/j.matchemphys.2015.11.033
Título revista:Materials Chemistry and Physics
Título revista abreviado:Mater Chem Phys
ISSN:02540584
CODEN:MCHPD
Registro:https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_02540584_v169_n_p82_Franceschini

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Citas:

---------- APA ----------
Franceschini, E.A., Llave, E.D.L., Williams, F.J. & Soler-Illia, G.J.A.A. (2016) . A simple three step method for selective placement of organic groups in mesoporous silica thin films. Materials Chemistry and Physics, 169, 82-88.
http://dx.doi.org/10.1016/j.matchemphys.2015.11.033
---------- CHICAGO ----------
Franceschini, E.A., Llave, E.D.L., Williams, F.J., Soler-Illia, G.J.A.A. "A simple three step method for selective placement of organic groups in mesoporous silica thin films" . Materials Chemistry and Physics 169 (2016) : 82-88.
http://dx.doi.org/10.1016/j.matchemphys.2015.11.033
---------- MLA ----------
Franceschini, E.A., Llave, E.D.L., Williams, F.J., Soler-Illia, G.J.A.A. "A simple three step method for selective placement of organic groups in mesoporous silica thin films" . Materials Chemistry and Physics, vol. 169, 2016, pp. 82-88.
http://dx.doi.org/10.1016/j.matchemphys.2015.11.033
---------- VANCOUVER ----------
Franceschini, E.A., Llave, E.D.L., Williams, F.J., Soler-Illia, G.J.A.A. A simple three step method for selective placement of organic groups in mesoporous silica thin films. Mater Chem Phys. 2016;169:82-88.
http://dx.doi.org/10.1016/j.matchemphys.2015.11.033