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Ferreyra, C.; Marchini, F.; Granell, P.; Golmar, F.; Albornoz, C.; Williams, F.J.; Leyva, A.G.; Rubi, D. "Growth of (100)-highly textured BaBiO3 thin films on silicon" (2016) Thin Solid Films. 612:369-372
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Abstract:

We report on the growth and characterization of non-epitaxial but (100)-highly textured BaBiO3 thin films on silicon substrates. We have found the deposition conditions that optimize the texture, and show that the textured growth is favoured by the formation of a BaO layer at the first growth stages. X-ray diffraction Φ-scans, together with the observation that the same textured growth is found on films grown on Pt and SiO2 buffered Si, demonstrate the absence of epitaxy. Finally, we have shown that our (100)-oriented BaBiO3 films can be used as suitable buffers for the growth of textured heterostructures on silicon, which could facilitate the integration of potential devices with standard electronics. © 2016 Elsevier B.V.

Registro:

Documento: Artículo
Título:Growth of (100)-highly textured BaBiO3 thin films on silicon
Autor:Ferreyra, C.; Marchini, F.; Granell, P.; Golmar, F.; Albornoz, C.; Williams, F.J.; Leyva, A.G.; Rubi, D.
Filiación:GIyA and INN, CNEA, Av. Gral Paz 1499, San Martín, Buenos Aires 1650, Argentina
Departamento de Física, Facultad Ciencias Exactas y Naturales, Universidad de Buenos Aires, Pabellón 1, Ciudad Universitaria, Buenos Aires, Argentina
Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET), Argentina
Departamento de Química Inorgánica, Analítica y Química-Física, INQUIMAE-CONICET, Facultad Ciencias Exactas y Naturales, Universidad de Buenos Aires, Pabellón 2, Ciudad Universitaria, Buenos Aires, Argentina
INTI, CMNB, Av. Gral Paz 5445, San Martín, Buenos Aires B1650KNA, Argentina
Escuela de Ciencia y Tecnología, UNSAM, Campus Miguelete, San Martín, Buenos Aires 1650, Argentina
Palabras clave:BaBiO3; Oxide heterostructures; Textured growth on silicon; Silicon; Silicon oxides; Thin films; X ray diffraction; BaBiO3; Deposition conditions; Growth stages; Oxide heterostructures; Silicon substrates; Textured growth; Epitaxial growth
Año:2016
Volumen:612
Página de inicio:369
Página de fin:372
DOI: http://dx.doi.org/10.1016/j.tsf.2016.06.033
Título revista:Thin Solid Films
Título revista abreviado:Thin Solid Films
ISSN:00406090
CODEN:THSFA
Registro:https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00406090_v612_n_p369_Ferreyra

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Citas:

---------- APA ----------
Ferreyra, C., Marchini, F., Granell, P., Golmar, F., Albornoz, C., Williams, F.J., Leyva, A.G.,..., Rubi, D. (2016) . Growth of (100)-highly textured BaBiO3 thin films on silicon. Thin Solid Films, 612, 369-372.
http://dx.doi.org/10.1016/j.tsf.2016.06.033
---------- CHICAGO ----------
Ferreyra, C., Marchini, F., Granell, P., Golmar, F., Albornoz, C., Williams, F.J., et al. "Growth of (100)-highly textured BaBiO3 thin films on silicon" . Thin Solid Films 612 (2016) : 369-372.
http://dx.doi.org/10.1016/j.tsf.2016.06.033
---------- MLA ----------
Ferreyra, C., Marchini, F., Granell, P., Golmar, F., Albornoz, C., Williams, F.J., et al. "Growth of (100)-highly textured BaBiO3 thin films on silicon" . Thin Solid Films, vol. 612, 2016, pp. 369-372.
http://dx.doi.org/10.1016/j.tsf.2016.06.033
---------- VANCOUVER ----------
Ferreyra, C., Marchini, F., Granell, P., Golmar, F., Albornoz, C., Williams, F.J., et al. Growth of (100)-highly textured BaBiO3 thin films on silicon. Thin Solid Films. 2016;612:369-372.
http://dx.doi.org/10.1016/j.tsf.2016.06.033