Artículo
Rozenberg, M.J.; Inoue, I.H.; Sánchez, M.J. "A model for non-volatile electronic memory devices with strongly correlated materials" (2005) Thin Solid Films. 486(1-2):24-27
Consulte la política de Acceso Abierto del editor
Abstract:
The behavior of a model for non-volatile electronic memory devices with strongly correlated materials, was investigated. The domain structure assumed in this model is motivated from a rather universal aspect of strongly correlated perovskites such as the spatial inhomogeneity that occurs at the nanoscale. It is observed that the switching mechanism is related hysteresis in the I-V characteristics and that the hysteresis is itself related to a conjectured metal-insulator transition at the level of small domains. The results show that the domains that receive charge are subject to an 'effective doping' that may drive them across a boundary between two distinct electronic phases.
Registro:
| Documento: | Artículo |
| Título: | A model for non-volatile electronic memory devices with strongly correlated materials |
| Autor: | Rozenberg, M.J.; Inoue, I.H.; Sánchez, M.J. |
| Filiación: | Laboratoire de Physique des Solides, CNRS UMR 8502, Université Paris-Sud, Orsay 91405 cedex, France Departamento de Física Juan José Giambiagi, FCEN, Ciudad Universitaria Pabellón I, (1428) Buenos Aires, Argentina Correlated Electron Research Center (CERC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8562, Japan Centro Atómico Bariloche, (8400) San Carlos de Bariloche, Argentina |
| Palabras clave: | Non-volatile memory; Resistance switching; Charge transfer; Correlation methods; Current voltage characteristics; Doping (additives); Electric currents; Electric potential; Electric resistance; Fermi level; Hysteresis; Mathematical models; MIM devices; Random access storage; Memory effects; Non-volatile memories; Resistance random access memories (RRAM); Resistance switching; Data storage equipment |
| Año: | 2005 |
| Volumen: | 486 |
| Número: | 1-2 |
| Página de inicio: | 24 |
| Página de fin: | 27 |
| DOI: | http://dx.doi.org/10.1016/j.tsf.2004.10.059 |
| Título revista: | Thin Solid Films |
| Título revista abreviado: | Thin Solid Films |
| ISSN: | 00406090 |
| CODEN: | THSFA |
| Registro: | https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00406090_v486_n1-2_p24_Rozenberg |
Referencias:
- Blom, P.W.M., (1994) Phys. Rev. Lett., 73, p. 2107
- Beck, A., (2000) Appl. Phys. Lett., 77, p. 139
- Watanabe, Y., (2001) Appl. Phys. Lett., 78, p. 3738
- Liu, S.Q., Wu, N.J., Ignatiev, A., (2000) Appl. Phys. Lett., 76, p. 2749
- Tulina, N.A., Ionov, A.M., Chaika, A.N., (2001) Physica C, 366, p. 23
- Rozenberg, M.J., Inoue, I.H., Sánchez, M.J., (2004) Phys. Rev. Lett., 92, p. 178302
- M.J. Rozenberg, I.H. Inoue, M.J. Sánchez, cond-mat/0406646; Simmons, J.G., Verderber, R.R., (1967) Proc. R. Soc., A, 301, p. 77
- Moreo, A., (1999) Science, 283, p. 2034
- Dagotto, E., (2001) Phys. Rep., 344, p. 1
- Dagotto, E., (2002) Nanoscale Phase Separation and Colossal Magnetoresistance, , Springer-Verlag Berlin
- Pan, S.H., (2001) Nature, 413, p. 282
- Imada, M., Fujimori, A., Tokura, Y., (1998) Rev. Mod. Phys., 70, p. 1039
- Becker, T., Streng, C., Luo, Y., Moshnyaga, V., Damaschke, B., Shannon, N., Samwer, K., (2002) Phys. Rev. Lett., 89, p. 237203
- Rossel, C., Meijer, G.I., Brémaud, D., Widmer, D., (2001) J. Appl. Phys., 90, p. 2892
- Beck, A., (2000), PCT WO 00/49559; note; Zhuang, W.W., (2002) International Electron Devices Meeting. Technical Digest (Cat. No. 02CH37358), pp. 193-196. , IEEE Piscataway, NJ, USA
Citas:
---------- APA ----------
Rozenberg, M.J., Inoue, I.H. & Sánchez, M.J. (2005) . A model for non-volatile electronic memory devices with strongly correlated materials. Thin Solid Films, 486(1-2), 24-27.http://dx.doi.org/10.1016/j.tsf.2004.10.059
---------- CHICAGO ----------
Rozenberg, M.J., Inoue, I.H., Sánchez, M.J. "A model for non-volatile electronic memory devices with strongly correlated materials" . Thin Solid Films 486, no. 1-2 (2005) : 24-27.http://dx.doi.org/10.1016/j.tsf.2004.10.059
---------- MLA ----------
Rozenberg, M.J., Inoue, I.H., Sánchez, M.J. "A model for non-volatile electronic memory devices with strongly correlated materials" . Thin Solid Films, vol. 486, no. 1-2, 2005, pp. 24-27.http://dx.doi.org/10.1016/j.tsf.2004.10.059
---------- VANCOUVER ----------
Rozenberg, M.J., Inoue, I.H., Sánchez, M.J. A model for non-volatile electronic memory devices with strongly correlated materials. Thin Solid Films. 2005;486(1-2):24-27.http://dx.doi.org/10.1016/j.tsf.2004.10.059
