Artículo
Alcober, C.; Bilmes, S.A. "Potential distribution at the semiconductor thin film/electrolyte interface with high density of grain boundaries" (2002) Thin Solid Films. 405(1-2):55-63
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Registro:
| Documento: | Artículo |
| Título: | Potential distribution at the semiconductor thin film/electrolyte interface with high density of grain boundaries |
| Autor: | Alcober, C.; Bilmes, S.A. |
| Filiación: | INQUIMAE, Universidad De Buenos Aires, Ciudad Universitaria Pab. II, 1428 Buenos Aires, Argentina |
| Palabras clave: | Cadmium sulfide; Electrochemistry; Grain boundary; Surface conductivity; Carrier concentration; Carrier mobility; Charge carriers; Electrolytes; Electronic structure; Grain boundaries; Interfaces (materials); Precipitation (chemical); Semiconducting cadmium compounds; Semiconducting films; Substrates; Semiconductor thin films; Thin films |
| Año: | 2002 |
| Volumen: | 405 |
| Número: | 1-2 |
| Página de inicio: | 55 |
| Página de fin: | 63 |
| DOI: | http://dx.doi.org/10.1016/S0040-6090(01)01751-5 |
| Título revista: | Thin Solid Films |
| Título revista abreviado: | Thin Solid Films |
| ISSN: | 00406090 |
| CODEN: | THSFA |
| Registro: | https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00406090_v405_n1-2_p55_Alcober |
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Citas:
---------- APA ----------
Alcober, C. & Bilmes, S.A. (2002) . Potential distribution at the semiconductor thin film/electrolyte interface with high density of grain boundaries. Thin Solid Films, 405(1-2), 55-63.http://dx.doi.org/10.1016/S0040-6090(01)01751-5
---------- CHICAGO ----------
Alcober, C., Bilmes, S.A. "Potential distribution at the semiconductor thin film/electrolyte interface with high density of grain boundaries" . Thin Solid Films 405, no. 1-2 (2002) : 55-63.http://dx.doi.org/10.1016/S0040-6090(01)01751-5
---------- MLA ----------
Alcober, C., Bilmes, S.A. "Potential distribution at the semiconductor thin film/electrolyte interface with high density of grain boundaries" . Thin Solid Films, vol. 405, no. 1-2, 2002, pp. 55-63.http://dx.doi.org/10.1016/S0040-6090(01)01751-5
---------- VANCOUVER ----------
Alcober, C., Bilmes, S.A. Potential distribution at the semiconductor thin film/electrolyte interface with high density of grain boundaries. Thin Solid Films. 2002;405(1-2):55-63.http://dx.doi.org/10.1016/S0040-6090(01)01751-5
