Artículo
Alcalde, A.M.; Romano, C.L.; Marques, G.E. "Spin relaxation rates in quantum dots: Role of the phonon modulated spin-orbit interaction" (2008) Solid State Communications. 148(5-6):255-258
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Abstract:
We calculate the spin relaxation rates in InAs and GaAs parabolic quantum dots due to the interaction of spin carriers with acoustical phonons. We consider a spin relaxation mechanism completely intrinsic to the system, since it is based on the modulation of the spin-orbit interaction by the acoustic phonon potential, which is independent of any structural properties of the confinement potential. The electron-phonon deformation potential and the piezoelectric interaction are described by the Pavlov-Firsov spin-phonon Hamiltonian. Our results demonstrate that, for narrow-gap semiconductors, the deformation potential interaction becomes dominant. This behavior is not observed for wide or intermediate gap semiconductors, where the piezoelectric coupling, in general, governs the relaxation processes. We also demonstrate that the spin relaxation rates are particularly sensitive to values of the Landé g-factor, which depend strongly on the spatial shape of the confinement. © 2008 Elsevier Ltd. All rights reserved.
Registro:
| Documento: | Artículo |
| Título: | Spin relaxation rates in quantum dots: Role of the phonon modulated spin-orbit interaction |
| Autor: | Alcalde, A.M.; Romano, C.L.; Marques, G.E. |
| Filiación: | Instituto de Física, Universidade Federal de Uberlândia, 38400-902 Uberlândia, MG, Brazil Department of Physics J. J. Giambiagi, University of Buenos Aires, Ciudad Universitária, Pab. I, C1428EHA Buenos Aires, Argentina Departamento de Física, Universidade Federal de São Carlos, 13565-905 São Carlos, SP, Brazil |
| Palabras clave: | A. Nanostructures; A. Semiconductors; D. Electron-phonon interactions; Computer networks; Crystals; Deformation; Electric conductivity; Flow interactions; Gallium alloys; Indium arsenide; Inverse kinematics; Modulation; Optical waveguides; Orbits; Piezoelectricity; Quantum electronics; Semiconductor materials; Semiconductor quantum dots; A. Nanostructures; A. Semiconductors; D. Electron-phonon interactions; Spin-relaxation rates; Spin dynamics |
| Año: | 2008 |
| Volumen: | 148 |
| Número: | 5-6 |
| Página de inicio: | 255 |
| Página de fin: | 258 |
| DOI: | http://dx.doi.org/10.1016/j.ssc.2008.08.002 |
| Título revista: | Solid State Communications |
| Título revista abreviado: | Solid State Commun |
| ISSN: | 00381098 |
| CODEN: | SSCOA |
| Registro: | https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00381098_v148_n5-6_p255_Alcalde |
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Citas:
---------- APA ----------
Alcalde, A.M., Romano, C.L. & Marques, G.E. (2008) . Spin relaxation rates in quantum dots: Role of the phonon modulated spin-orbit interaction. Solid State Communications, 148(5-6), 255-258.http://dx.doi.org/10.1016/j.ssc.2008.08.002
---------- CHICAGO ----------
Alcalde, A.M., Romano, C.L., Marques, G.E. "Spin relaxation rates in quantum dots: Role of the phonon modulated spin-orbit interaction" . Solid State Communications 148, no. 5-6 (2008) : 255-258.http://dx.doi.org/10.1016/j.ssc.2008.08.002
---------- MLA ----------
Alcalde, A.M., Romano, C.L., Marques, G.E. "Spin relaxation rates in quantum dots: Role of the phonon modulated spin-orbit interaction" . Solid State Communications, vol. 148, no. 5-6, 2008, pp. 255-258.http://dx.doi.org/10.1016/j.ssc.2008.08.002
---------- VANCOUVER ----------
Alcalde, A.M., Romano, C.L., Marques, G.E. Spin relaxation rates in quantum dots: Role of the phonon modulated spin-orbit interaction. Solid State Commun. 2008;148(5-6):255-258.http://dx.doi.org/10.1016/j.ssc.2008.08.002
