Artículo
Rozenberg, M.J.; Inoue, I.H.; Sánchez, M.J. "Nonvolatile memory with multilevel switching: A basic model" (2004) Physical Review Letters. 92(17):178302-1-178302-4
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Abstract:
An initial model for resistance random access memory (RRAM) with the assumption that the semiconducting part has a nonpercolating domain structure was analyzed. The model was solved using numerical simulations and the basic carrier transfer mechanism was discussed. It was shown that the largest carrier transfers occur between top and bottom domains, and the middle one, since the interdomain tunneling amplitudes are higher. The results show that the model captures multilevel switchability of the resistance, its memory retention and hysteretic behavior in the current-voltage curve.
Registro:
| Documento: | Artículo |
| Título: | Nonvolatile memory with multilevel switching: A basic model |
| Autor: | Rozenberg, M.J.; Inoue, I.H.; Sánchez, M.J. |
| Filiación: | CPHT, Ecole Polytechnique, 91128 Palaiseau Cedex, France Departamento de Física, FCEN, Cd. Universitaria Pabellón I, (1428) Buenos Aires, Argentina Correlated Electron Research Center, Natl. Inst. Adv. Indust. Sci./T., Tsukuba 305-8562, Japan |
| Palabras clave: | Computer simulation; Electric resistance; Electrodes; Hysteresis; Interfaces (materials); Mobile telecommunication systems; Monte Carlo methods; Network protocols; Perovskite; Phase separation; Probability; Random access storage; Silver; Switching; Ternary systems; Multilevel switching; Nonvolatile memory (NVM); Ovonic unified memory (OUM); Resistance random access memory (RRAM); Nonvolatile storage |
| Año: | 2004 |
| Volumen: | 92 |
| Número: | 17 |
| Página de inicio: | 178302 |
| Página de fin: | 1-178302-4 |
| DOI: | http://dx.doi.org/10.1103/PhysRevLett.92.178302 |
| Título revista: | Physical Review Letters |
| Título revista abreviado: | Phys Rev Lett |
| ISSN: | 00319007 |
| CODEN: | PRLTA |
| Registro: | https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00319007_v92_n17_p178302_Rozenberg |
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Citas:
---------- APA ----------
Rozenberg, M.J., Inoue, I.H. & Sánchez, M.J. (2004) . Nonvolatile memory with multilevel switching: A basic model. Physical Review Letters, 92(17), 178302-1-178302-4.http://dx.doi.org/10.1103/PhysRevLett.92.178302
---------- CHICAGO ----------
Rozenberg, M.J., Inoue, I.H., Sánchez, M.J. "Nonvolatile memory with multilevel switching: A basic model" . Physical Review Letters 92, no. 17 (2004) : 178302-1-178302-4.http://dx.doi.org/10.1103/PhysRevLett.92.178302
---------- MLA ----------
Rozenberg, M.J., Inoue, I.H., Sánchez, M.J. "Nonvolatile memory with multilevel switching: A basic model" . Physical Review Letters, vol. 92, no. 17, 2004, pp. 178302-1-178302-4.http://dx.doi.org/10.1103/PhysRevLett.92.178302
---------- VANCOUVER ----------
Rozenberg, M.J., Inoue, I.H., Sánchez, M.J. Nonvolatile memory with multilevel switching: A basic model. Phys Rev Lett. 2004;92(17):178302-1-178302-4.http://dx.doi.org/10.1103/PhysRevLett.92.178302
