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Abstract:

The two-dimensional isolation oxidation of silicon is studied in the reaction-controlled limit, which corresponds to the case of initially thin oxides. This limit is both of physical relevance and one of the few regimes in which analytical progress can be made in the whole oxide region. Slowly-varying or long-wave approximations can be used to derive equations that govern the growth of the oxide interfaces (which form two moving boundaries) and the oxidation-induced stresses in the oxide. Here, these equations are solved numerically, by use of a Keller-Box discretisation scheme, complementing previously obtained asymptotic results. The numerical scheme is used to investigate the effects of the nitride-cap rigidity and the initial oxide thickness on both the lateral extent of oxidation (the so-called 'bird's beak' length) and the stresses that occur on the silicon/silicon-oxide interface. The results from the model are interpreted in dimensional form so that quantitative comparisons can be made with experimental results. The two-dimensional isolation oxidation of silicon is studied in the reaction-controlled limit, which corresponds to the case of initially thin oxides. This limit is both of physical relevance and one of the few regimes in which analytical progress can be made in the whole oxide region. Slowly-varying or long-wave approximations can be used to derive equations that govern the growth of the oxide interfaces (which form two moving boundaries) and the oxidation-induced stresses in the oxide. Here, these equations are solved numerically, by use of a Keller-Box discretization scheme, complementing previously obtained asymptotic results. The numerical scheme is used to investigate the effects of the nitride-cap rigidity and the initial oxide thickness on both the lateral extent of oxidation (the so-called `bird's beak' length) and the stresses that occur on the silicon/silicon-oxide interface. The results from the model are interpreted in dimensional form so that quantitative comparisons can be made with experimental results.

Registro:

Documento: Artículo
Título:Oxidation-induced stresses in the isolation oxidation of silicon
Autor:Evans, J.D.; Vynnycky, M.; Ferro, S.P.
Ciudad:Dordrecht, Netherlands
Filiación:Department of Mathematics, University of Wales, Aberystwyth, Ceredigion, SY23 3BZ, United Kingdom
Department of Mathematical Sciences, University of Bath, Bath, BA2 7AY, United Kingdom
Department of Mechanics, Royal Institute of Technology, S-100 44 Stockholm, Sweden
INFIP-CONICET, Departamento de Fisica, Ciudad Universitaria, Pab. 1, 1428 Buenos Aires, Argentina
Palabras clave:Keller-Box discretisation scheme; Numerical finite differences; Oxidation-induced stresses; Silicon oxidation; Approximation theory; Finite difference method; Interfaces (materials); Mathematical models; Problem solving; Silicon; Isolation oxidation; Keller-Box discretization method; Oxidation; oxidation
Año:2000
Volumen:38
Número:2
Página de inicio:191
Página de fin:218
DOI: http://dx.doi.org/10.1023/A:1004737420926
Título revista:Journal of Engineering Mathematics
Título revista abreviado:J. Eng. Math.
ISSN:00220833
CODEN:JLEMA
Registro:https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00220833_v38_n2_p191_Evans

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Citas:

---------- APA ----------
Evans, J.D., Vynnycky, M. & Ferro, S.P. (2000) . Oxidation-induced stresses in the isolation oxidation of silicon. Journal of Engineering Mathematics, 38(2), 191-218.
http://dx.doi.org/10.1023/A:1004737420926
---------- CHICAGO ----------
Evans, J.D., Vynnycky, M., Ferro, S.P. "Oxidation-induced stresses in the isolation oxidation of silicon" . Journal of Engineering Mathematics 38, no. 2 (2000) : 191-218.
http://dx.doi.org/10.1023/A:1004737420926
---------- MLA ----------
Evans, J.D., Vynnycky, M., Ferro, S.P. "Oxidation-induced stresses in the isolation oxidation of silicon" . Journal of Engineering Mathematics, vol. 38, no. 2, 2000, pp. 191-218.
http://dx.doi.org/10.1023/A:1004737420926
---------- VANCOUVER ----------
Evans, J.D., Vynnycky, M., Ferro, S.P. Oxidation-induced stresses in the isolation oxidation of silicon. J. Eng. Math. 2000;38(2):191-218.
http://dx.doi.org/10.1023/A:1004737420926