Artículo
Abstract:
Hg1-xCdxTe (MCT) epilayers were grown on (1 1 1)Cd, (1 1 1)Te, (1 1 0) and (1 0 0) CdZnTe and CdTeSe substrates by isothermal vapor phase epitaxy (ISOVPE). The growth kinetics of the epilayers were studied by a non-linear diffusive convective model for the ISOVPE MCT growth, which was assessed in a previous paper . The non-linear diffusion-convection problem, which describes ISOVPE MCT film growth, was numerically solved by means of discrete mathematics. As the theoretical and experimental composition profiles were remarkably different in accordance with the epilayers grown over pure CdTe substrates, in the model a finite rate in the surface reaction rate constant that enabled a good fit was assumed. The numerical value of the surface reaction rate constant was similar for all the studied substrates and crystalline orientations, hence the results enabled us to determine that the deposition rate has a mixed control for the experimental conditions of this work. This isotropic characteristic of the ISOVPE technique for pure and alloyed CdTe substrates is remarkable, quite different from other MCT growth techniques as MBE or MOCVD. © 2010 Elsevier B.V. All rights reserved.
Registro:
| Documento: | Artículo |
| Título: | Growth kinetics of ISOVPE HgCdTe epilayers obtained on alloyed CdTe substrates with different crystalline orientations |
| Autor: | Gilabert, U.; Moyano, E.; Scarpettini, A.; Trigubó, A.B. |
| Filiación: | SEGEMAR, Parque Tecnológico Miguelete, Av. Gral Paz 5445, Edif 14, 1650 San Martín, Argentina CNEA-CAC, Av. Gral Paz y Constituyentes, 1650 San Martín, Argentina UBA-FCEN, Departamento de Física, Pabellón 1, Intendente Guiraldes 2160, 1428 C.A.B.A., Argentina UTN-FRBA, Medrano 951, 1179 C.A.B.A., Argentina CINSO-CONICET-CITEDEF, Juan Bautista La Salle 4397, Villa Martelli, 1603 Pcia de Buenos Aires, Argentina |
| Palabras clave: | A1. Growth models; A3. Vapor phase epitaxy; B1. Cadmium compounds; B2. Semiconducting II-VI materials; A1. Growth models; A3. Vapor phase epitaxy; CdTe; Composition profile; Crystalline orientations; Discrete mathematics; Epilayers grown; Experimental conditions; Finite rate; Growth models; Growth techniques; HgCdTe; Isothermal vapor phase epitaxy; Mixed controls; MOCVD; Non-linear; Nonlinear diffusion; Numerical values; Semiconducting II-VI materials; Bioactivity; Cadmium; Cadmium alloys; Cadmium compounds; Chemical vapor deposition; Crystal growth; Crystalline materials; Epilayers; Growth kinetics; Mathematical techniques; Mercury (metal); Mercury compounds; Rate constants; Semiconductor growth; Substrates; Surface reactions; Vapor phase epitaxy; Vapors; Film growth |
| Año: | 2010 |
| Volumen: | 312 |
| Número: | 9 |
| Página de inicio: | 1481 |
| Página de fin: | 1485 |
| DOI: | http://dx.doi.org/10.1016/j.jcrysgro.2010.01.027 |
| Título revista: | Journal of Crystal Growth |
| Título revista abreviado: | J Cryst Growth |
| ISSN: | 00220248 |
| CODEN: | JCRGA |
| Registro: | https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00220248_v312_n9_p1481_Gilabert |
Referencias:
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Citas:
---------- APA ----------
Gilabert, U., Moyano, E., Scarpettini, A. & Trigubó, A.B. (2010) . Growth kinetics of ISOVPE HgCdTe epilayers obtained on alloyed CdTe substrates with different crystalline orientations. Journal of Crystal Growth, 312(9), 1481-1485.http://dx.doi.org/10.1016/j.jcrysgro.2010.01.027
---------- CHICAGO ----------
Gilabert, U., Moyano, E., Scarpettini, A., Trigubó, A.B. "Growth kinetics of ISOVPE HgCdTe epilayers obtained on alloyed CdTe substrates with different crystalline orientations" . Journal of Crystal Growth 312, no. 9 (2010) : 1481-1485.http://dx.doi.org/10.1016/j.jcrysgro.2010.01.027
---------- MLA ----------
Gilabert, U., Moyano, E., Scarpettini, A., Trigubó, A.B. "Growth kinetics of ISOVPE HgCdTe epilayers obtained on alloyed CdTe substrates with different crystalline orientations" . Journal of Crystal Growth, vol. 312, no. 9, 2010, pp. 1481-1485.http://dx.doi.org/10.1016/j.jcrysgro.2010.01.027
---------- VANCOUVER ----------
Gilabert, U., Moyano, E., Scarpettini, A., Trigubó, A.B. Growth kinetics of ISOVPE HgCdTe epilayers obtained on alloyed CdTe substrates with different crystalline orientations. J Cryst Growth. 2010;312(9):1481-1485.http://dx.doi.org/10.1016/j.jcrysgro.2010.01.027
