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Sambuco Salomone, L.; Lipovetzky, J.; Carbonetto, S.H.; García Inza, M.A.; Redin, E.G.; Campabadal, F.; Faigón, A. "Experimental evidence and modeling of two types of electron traps in Al2O3 for nonvolatile memory applications" (2013) Journal of Applied Physics. 113(7)
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Abstract:

Al2O3-based dielectrics are currently considered as promising materials to use in nonvolatile memories. The electron trap density in this material is much higher than in conventional SiO2, being their characteristics critical for the application. Conventional capacitance-voltage (C-V) techniques were used to study the main effects of the electron traps on the electrical characteristics of MOS capacitors with atomic layer deposited Al2O3 as insulating layer. More detailed information about the trapping kinetics was obtained through the study of the constant capacitance voltage transient. Two different types of traps were found. One is responsible for the instabilities observed in C-V measurements, the other has characteristic trapping times three orders longer. A physical model is presented to explain the observed trapping kinetics exhibiting good agreement between experiments and simulations. The energy levels of the studied traps were determined at 2.2 and 2.6 eV below the Al2O3 conduction band, with densities of 2.9 × 1018 cm-3 and 1.6 × 1018 cm-3, respectively. © 2013 American Institute of Physics.

Registro:

Documento: Artículo
Título:Experimental evidence and modeling of two types of electron traps in Al2O3 for nonvolatile memory applications
Autor:Sambuco Salomone, L.; Lipovetzky, J.; Carbonetto, S.H.; García Inza, M.A.; Redin, E.G.; Campabadal, F.; Faigón, A.
Filiación:Laboratorio de Física de Dispositivos - Microelectrónica, Departamento de Física, Universidad de Buenos Aires, Av. Paseo Colón 850, C1063ACV, Buenos Aires, Argentina
Instituto de Ciencias de la Ingeniería (INTECIN), Argentina
Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET), Argentina
Instituto de Microelectrónica de Barcelona (IMB), Centro Nacional de Microelectrónica (CNM), Consejo Superior de Investigaciones Científicas (CSIC), Spain
Palabras clave:Atomic layer deposited; C-V measurement; Capacitance-voltage techniques; Constant capacitance; Electrical characteristic; Electron trap density; Experimental evidence; Insulating layers; Main effect; Non-volatile memories; Non-volatile memory application; Physical model; Atomic layer deposition; Electron traps; MOS capacitors; Aluminum
Año:2013
Volumen:113
Número:7
DOI: http://dx.doi.org/10.1063/1.4792038
Título revista:Journal of Applied Physics
Título revista abreviado:J Appl Phys
ISSN:00218979
CODEN:JAPIA
Registro:https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00218979_v113_n7_p_SambucoSalomone

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Citas:

---------- APA ----------
Sambuco Salomone, L., Lipovetzky, J., Carbonetto, S.H., García Inza, M.A., Redin, E.G., Campabadal, F. & Faigón, A. (2013) . Experimental evidence and modeling of two types of electron traps in Al2O3 for nonvolatile memory applications. Journal of Applied Physics, 113(7).
http://dx.doi.org/10.1063/1.4792038
---------- CHICAGO ----------
Sambuco Salomone, L., Lipovetzky, J., Carbonetto, S.H., García Inza, M.A., Redin, E.G., Campabadal, F., et al. "Experimental evidence and modeling of two types of electron traps in Al2O3 for nonvolatile memory applications" . Journal of Applied Physics 113, no. 7 (2013).
http://dx.doi.org/10.1063/1.4792038
---------- MLA ----------
Sambuco Salomone, L., Lipovetzky, J., Carbonetto, S.H., García Inza, M.A., Redin, E.G., Campabadal, F., et al. "Experimental evidence and modeling of two types of electron traps in Al2O3 for nonvolatile memory applications" . Journal of Applied Physics, vol. 113, no. 7, 2013.
http://dx.doi.org/10.1063/1.4792038
---------- VANCOUVER ----------
Sambuco Salomone, L., Lipovetzky, J., Carbonetto, S.H., García Inza, M.A., Redin, E.G., Campabadal, F., et al. Experimental evidence and modeling of two types of electron traps in Al2O3 for nonvolatile memory applications. J Appl Phys. 2013;113(7).
http://dx.doi.org/10.1063/1.4792038