Artículo
Ghenzi, N.; Rozenberg, M.J.; Llopis, R.; Levy, P.; Hueso, L.E.; Stoliar, P. "Tuning the resistive switching properties of TiO2-x films" (2015) Applied Physics Letters. 106(12)
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Abstract:
We study the electrical characteristics of TiO2-x-based resistive switching devices fabricated with different oxygen/argon flow ratio during the oxide thin film sputtering deposition. Upon minute changes in this fabrication parameter, three qualitatively different device characteristics were accessed in the same system, namely, standard bipolar resistive switching, electroforming-free devices, and devices with multi-step breakdown. We propose that small variations in the oxygen/ argon flow ratio result in relevant changes of the oxygen vacancy concentration, which is the key parameter determining the resistive switching behavior. The coexistence of percolative or non-percolative conductive filaments is also discussed. Finally, the hypothesis is verified by means of the temperature dependence of the devices in low resistance state. © 2015 AIP Publishing LLC.
Registro:
| Documento: | Artículo |
| Título: | Tuning the resistive switching properties of TiO2-x films |
| Autor: | Ghenzi, N.; Rozenberg, M.J.; Llopis, R.; Levy, P.; Hueso, L.E.; Stoliar, P. |
| Filiación: | GAIANN, Centro Atómico Constituyentes, Comisión Nacional de Energía Atómica, Buenos Aires, Argentina ECyT, Universidad Nacional de San Martín, Campus Miguelete, San Martín, 1650, Argentina CIC NanoGUNE, Donostia-San Sebastián, Basque Country, 20018, Spain Laboratoire de Physique des Solides, UMR8502, Universite Paris-Sud, Orsay, 91405, France Departamento de Física Juan José Giambiagi, FCEN, UBA, Buenos Aires, Argentina CONICET, Consejo Nacional de Investigaciones Científicas y Técnicas, Buenos Aires, Argentina IKERBASQUE, Basque Foundation for Science, Bilbao, Basque Country, 48011, Spain |
| Palabras clave: | Deposition; Oxygen; Switching; Switching systems; Temperature distribution; Conductive filaments; Device characteristics; Electrical characteristic; Fabrication parameters; Oxygen vacancy concentration; Resistive switching behaviors; Resistive switching devices; Temperature dependence; Oxygen vacancies |
| Año: | 2015 |
| Volumen: | 106 |
| Número: | 12 |
| DOI: | http://dx.doi.org/10.1063/1.4916516 |
| Título revista: | Applied Physics Letters |
| Título revista abreviado: | Appl Phys Lett |
| ISSN: | 00036951 |
| CODEN: | APPLA |
| Registro: | https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00036951_v106_n12_p_Ghenzi |
Referencias:
- Waser, R., Dittmann, R., Staikov, G., Szot, K., (2009) Adv. Mater., 21, p. 2632
- Meijer, G.I., (2008) Science, 319, p. 1625
- Rozenberg, M., (2011) Scholarpedia, 6, p. 11414
- Sawa, A., (2008) Mater. Today, 11, p. 28
- Fors, R., Khartsev, S.I., Grishin, A.M., (2005) Phys. Rev. B, 71
- Oka, T., Nagaosa, N., (2005) Phys. Rev. Lett., 95
- Fujii, T., Kawasaki, M., Sawa, A., Akoh, H., Kawazo, Y., Tokura, Y., (2005) Appl. Phys. Lett., 86, p. 12107
- Rozenberg, M.J., Inoue, I.H., Sanchez, M.J., (2004) Phys. Rev. Lett., 92
- Tsui, S., Wang, Y.Q., Xue, Y.Y., Chu, C.W., (2006) Appl. Phys. Lett., 89
- Hamaguchi, M., Aoyama, K., Asanuma, S., Ues, Y., Katsufuji, T., (2006) Appl. Phys. Lett., 88
- Quintero, M., Levy, P., Leyva, A.G., Rozenberg, M.J., (2007) Phys. Rev. Lett., 98
- Yang, J.J., Inouea, I.H., Mikolajicka, T., Hwang, C.S., (2012) MRS Bull., 37, p. 131
- Ghenzi, N., Snchez, M.J., Rozenberg, M.J., Stoliar, P., Marlasca, F.G., Rubi, D., Levy, P., (2012) J. Appl. Phys., 111
- Song, S.J., Seok, J.Y., Yoon, J.H., Kim, K.M., Kim, G.H., Lee, M.H., Hwang, C.S., (2013) Sci. Rep., 3, p. 3443
- Strukov, D.B., Snider, G.S., Stewart, D.R., Williams, R.S., (2008) Nature, 453, p. 80
- Bogle, K.A., Bachhav, M.N., Deo, M.S., Valanoor, N., Ogale, S.B., (2009) Appl. Phys. Lett., 95
- Salaoru, I., Prodromakis, T., Khiat, A., Toumazou, C., (2013) Appl. Phys. Lett., 102
- Jeong, D.S., Schroeder, H., Waser, R., (2009) Phys. Rev. B, 79
- Guiot, V., Cario, L., Janod, E., Corraze, B., Phuoc, V.T., Rozenberg, M.J., Stoliar, P., Roditchev, D., (2013) Nat. Commun., 4, p. 1722
- Ghenzi, N., Rubi, D., Mangano, E., Giménez, G., Stoliar, P., Levy, P., (2014) Thin Solid Films, 550, p. 683
- Sze, S.M., Gibbons, G., (1966) Appl. Phys. Lett., 8, p. 111
- Blasco, J., Ghenzi, N., Sue, J., Levy, P., Miranda, E., (2014) IEEE Electron Device Lett., 35, p. 390
- Yang, J.J., Strukov, D.B., Stewart, D.R., (2013) Nat. Nanotechnol., 8, p. 13
- Ghenzi, N., Sánchez, M.J., Levy, P., (2013) J. Phys. D: Appl. Phys., 46
- Ghenzi, N., Sánchez, M.J., Rubi, D., Rozenberg, M.J., Urdaniz, C., Weissman, M., Levy, P., (2014) Appl. Phys. Lett., 104
- Shang, S.D., Rong, S.J., Gen, S.B., Matthias, W., (2013) Chin. Phys. B, 22, p. 67202
- Zeman, P., Takabayashi, S., Effect of total and oxygen partial pressures on structure of photocatalytic TiO2 films sputtered on unheated substrate (2002) Surf. Coat. Technol., 153, p. 93. , Fig. 1 of
- Lee, J.H., Luo, G., Tung, I.C., Chang, S.H., Luo, Z., Malshe, M., Gadre, M., Eastman, J.A., (2014) Nat. Mater., 13, p. 879
- Hanaor, D., Sorrell, C., (2011) J. Mater. Sci., 46, p. 855
- Ghenzi, N., Sánchez, M.J., Marlasca, F.G., Levy, P., Rozenberg, M., (2010) J. Appl. Phys., 107
- Ghenzi, N., Stoliar, P., Fuertes, M.C., Marlasca, F.G., Levy, P., (2012) Phys. B, 407, p. 3096
- Hermes, C., Bruchhaus, R., Waser, R., (2011) IEEE Electron Device Lett., 32, p. 1588
- Hu, C., McDaniel, M.D., Ekerdt, J.G., Yu, E.T., (2013) IEEE Electron Devices Lett., 34, p. 1385
- Hu, C., McDaniel, M.D., Posadas, A., Demkov, A.A., Ekerdt, J.G., Yu, E.T., (2014) Nano Lett., 14, p. 4360
Citas:
---------- APA ----------
Ghenzi, N., Rozenberg, M.J., Llopis, R., Levy, P., Hueso, L.E. & Stoliar, P. (2015) . Tuning the resistive switching properties of TiO2-x films. Applied Physics Letters, 106(12).http://dx.doi.org/10.1063/1.4916516
---------- CHICAGO ----------
Ghenzi, N., Rozenberg, M.J., Llopis, R., Levy, P., Hueso, L.E., Stoliar, P. "Tuning the resistive switching properties of TiO2-x films" . Applied Physics Letters 106, no. 12 (2015).http://dx.doi.org/10.1063/1.4916516
---------- MLA ----------
Ghenzi, N., Rozenberg, M.J., Llopis, R., Levy, P., Hueso, L.E., Stoliar, P. "Tuning the resistive switching properties of TiO2-x films" . Applied Physics Letters, vol. 106, no. 12, 2015.http://dx.doi.org/10.1063/1.4916516
---------- VANCOUVER ----------
Ghenzi, N., Rozenberg, M.J., Llopis, R., Levy, P., Hueso, L.E., Stoliar, P. Tuning the resistive switching properties of TiO2-x films. Appl Phys Lett. 2015;106(12).http://dx.doi.org/10.1063/1.4916516
