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Abstract:

Resistive random access memory based on the resistive switching phenomenon is emerging as a strong candidate for next generation non-volatile memory. So far, the resistive switching effect has been observed in many transition metal oxides, including strongly correlated ones, such as, cuprate superconductors, colossal magnetoresistant manganites and Mott insulators. However, up to now, no clear evidence of the possible relevance of strong correlation effects in the mechanism of resistive switching has been reported. Here, we study Pr 0.7 Ca0.3 MnO3, which shows bipolar resistive switching. Performing micro-spectroscopic studies on its bare surface we are able to track the systematic electronic structure changes in both, the low and high resistance state. We find that a large change in the electronic conductance is due to field-induced oxygen vacancies, which drives a Mott metal-insulator transition at the surface. Our study demonstrates that strong correlation effects may be incorporated to the realm of the emerging oxide electronics.

Registro:

Documento: Artículo
Título:A new route to the Mott-Hubbard metal-insulator transition: Strong correlations effects in Pr0.7 Ca0.3 MnO3
Autor:Lee, H.S.; Choi, S.G.; Park, H.-H.; Rozenberg, M.J.
Filiación:Department of Materials Science and Engineering, Yonsei University, Seodaemun-Ku, Seoul 120-749, South Korea
Laboratoire de Physique des Solides, CNRS-UMR 8502, Université Paris-Sud, Orsay 91405, France
Departamento de Física, FCEN, Universidad de Buenos Aires, 1428 Buenos Aires, Argentina
Año:2013
Volumen:3
DOI: http://dx.doi.org/10.1038/srep01704
Título revista:Scientific Reports
Título revista abreviado:Sci. Rep.
ISSN:20452322
PDF:https://bibliotecadigital.exactas.uba.ar/download/paper/paper_20452322_v3_n_p_Lee.pdf
Registro:https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_20452322_v3_n_p_Lee

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Citas:

---------- APA ----------
Lee, H.S., Choi, S.G., Park, H.-H. & Rozenberg, M.J. (2013) . A new route to the Mott-Hubbard metal-insulator transition: Strong correlations effects in Pr0.7 Ca0.3 MnO3. Scientific Reports, 3.
http://dx.doi.org/10.1038/srep01704
---------- CHICAGO ----------
Lee, H.S., Choi, S.G., Park, H.-H., Rozenberg, M.J. "A new route to the Mott-Hubbard metal-insulator transition: Strong correlations effects in Pr0.7 Ca0.3 MnO3" . Scientific Reports 3 (2013).
http://dx.doi.org/10.1038/srep01704
---------- MLA ----------
Lee, H.S., Choi, S.G., Park, H.-H., Rozenberg, M.J. "A new route to the Mott-Hubbard metal-insulator transition: Strong correlations effects in Pr0.7 Ca0.3 MnO3" . Scientific Reports, vol. 3, 2013.
http://dx.doi.org/10.1038/srep01704
---------- VANCOUVER ----------
Lee, H.S., Choi, S.G., Park, H.-H., Rozenberg, M.J. A new route to the Mott-Hubbard metal-insulator transition: Strong correlations effects in Pr0.7 Ca0.3 MnO3. Sci. Rep. 2013;3.
http://dx.doi.org/10.1038/srep01704